Xin GAO
,
Yufeng ZHENG
,
Wei CAI
,
Su ZHANG
,
Liancheng ZHAO
材料科学技术（英文）
The microstructure, phase transformation, compression property and strain recovery characteristics of equiatomic TaRu super high temperature shape memory alloy have been studied by optical microscope, XRD, DTA, compression tests and TEM observations. When cooling the alloy specimen from high temperature to the room temperature, (parent phase)→ (interphase)→ (martensite) two-step phase transformations occur. The microstructure at room temperature show regularly arranged band morphology, with the monoclinic crystal structure. The twinning relationship between the martensite bands is determined to be (101) of Type I. Reorientation and coalescence of the martensite bands inside the variant happened during compression at room temperature. The → reversible transformation contributes mainly the shape memory effect, with the maximum completely recovery strain of 2%.
关键词:
TaRu alloy
,
null
,
null
,
null
Xin GAO
材料科学技术（英文）
980 nm InGaAs/GaAs separate confinement heterostructure (SCH) strained quantum well (QW) laser with non-absorbing facets was fabricated by using thermal treatment. Microchannel coolers with a five-layer thin oxygen-free copper plate structure were designed and fabricated through thermal bonding in hydrogen ambient. The highest CW (continuous wave) output power of 200 W for 5-bar arrays packaged by microchannel coolers was presented.
关键词:
High power
,
power
,
microchannel
,
coolers
,
stacked
Journal of Alloys and Compounds
A solid solution with formula (Y1-xTbx)(3)GaO6 (x = 0-0.5) was prepared by solid-state reaction method. Powder X-ray diffraction (XRD) shows that Y3GaO6 is isostructural to Gd3GaO6 (Cmc2(1)), and the lattice parameters are a = 8.8364(1) angstrom, b = 11.0899(1) angstrom and c = 5.3937(1) angstrom. Atomic parameters were derived by Rietveld refinement of the XRD pattern. Photoluminescence (PL) spectra show a strong green emission of 543 nm from the D-5(4) -> F-7(5) transition of Th3+ at room and liquid nitrogen temperature. There is a wide saturation range of the PL intensity for the Th3+ content from x = 0.04-0.20, and a long life time about 1200 mu s for the green 543 nm emission at room temperature. (c) 2006 Elsevier B.V. All rights reserved.
关键词:
Y3GaO6;crystal structure;Tb3+ doped;photoluminescence;luminescence properties;dependence;y3al5o12;phosphor;ions;ce3+;tb-3;uv
Journal of Solid State Chemistry
The crystal structures of a series of compounds with the composition Ln(3)GaO(6)(Ln = Nd, Sm, Eu, Gd, Tb, Dy, Ho and Er) synthesized by solid-state reaction at 1400degreesC are investigated. X-ray diffraction shows that Ln3GaO6 has a non-centro symmetric orthorhombic structure (space group Cmc2(1)). Lattice parameters a, b, c and cell volume and the average distances between Ln(l)-O, Ln(2)-O of these compounds decrease with the decreasing of the radii of trivalent Ln ions, which accord with the expected lanthanide contraction behavior. There are two sites of seven-fold coordination for Ln atoms with oxygens, and Ga atoms are in oxygen tetrahedra which are distorted and elongated along the a-axis. Magnetization measurements indicate that the susceptibility X changes with temperature in Curie-type manner. (C) 2004 Elsevier Inc. All rights reserved.
关键词:
Ln(3)GaO(6);crystal structure;Rietveld refinement;X-ray diffraction;garnets
常永勤
,
介万奇
,
郭喜平
,
陈福义
,
安卫军
功能材料
研究了ACRT-B法生长的Mn0.1Cd0.9In2Te4晶体中界面的形状和各组元沿轴向的分布规律及其分凝因数.发现结晶界面为椭球形;采用理想配比生长MnxCd1-xIn2Te4晶体,其4种组元并不按(Mn,Cd):In:Te=1:2:4比例结晶,而是要重新分布;通过数学方法处理实验数据得到Mn,Cd和In的分凝因数在α相区分别为1.286、1.9257和0.7294,在β相区则分别为1.12、1.055和0.985.
关键词:
ACRT-B法
,
MnxCd1-x In2Te4
,
界面
,
分凝因数
Journal of Luminescence
Ln(3+) (Ln = Nd, Sm, Eu, Gd, Dy, Ho, Er)-doped Y3GaO6 compounds were prepared by solid-state reaction, and their optical spectra such as absorption, photoluminescence, excitation and time-resolved spectra have been measured for Ln Nd, Sm, Dy, Ho, Er. X-ray powder diffraction shows that the lattice parameters of the compounds (Y(0.96)Ln(0.04))(3)GaO6 decrease with the decrease of the radii of trivalent Ln(3+) ions, indicating that Ln(3+) ions have substituted for y(3+) ions in the lattice. Optical spectra show that there are obvious absorptions at ultraviolet to visible region. The strong emissions in visible and infra-red region show that Y3GaO6 is a suitable host for rare-earth-doped laser crystal and phosphor materials. (C) 2004 Elsevier B.V. All rights reserved.
关键词:
crystal-field;absorption-spectra;luminescence;y3ga5o12;glasses;garnet;y2o3;ions;laf3;tb3
Journal of Solid State Chemistry
A serial of samples in Y2O3-Ga2O3-Tm2O3 pseudo-ternary system are prepared by solid-state chemical reaction method. The range of solid solution in (Y1-xTmx)(3)GaO6 is 0 < x < 0.384. Powder X-ray diffraction shows that the compounds crystallize in Gd3GaO6 (Cmc2(1))-type structure. The solid solubilities of Y3+xGa5-xO12 (x = 0-0.77) and Tm3+xGa5-xO12 (x = 0-0.62) are 37.5-47.11 at% Y2O3, and 37.5-45.26 at% Tm2O3, respectively. PL spectra of Tm-doped Y3GaO6 show that there is a sharp blue emission at similar to 456 nm from the D-1(2) -> F-3(4) transition at room temperatures with two lifetimes (similar to 5 and similar to 15 mu s) and a narrow saturation range of PL intensity for the Tm3+ content from x = 0.005 to 0.03. The sharp emission and long lifetime of (Y1-xTmx)(3)GaO6 indicate that Y3GaO6 is a potential phosphor and laser crystal host material. (c) 2005 Elsevier Inc. All rights reserved.
关键词:
Tm3+ -doped Y3GaO6;Y2O3-Ga2O3-Tm2O3 system;(Y1-xTmx)(3)Ga5O12 solid;solution;luminescence;crystal-structure;luminescence;phosphor;cations;ions;tb3
常永勤
,
安卫军
,
郭喜平
,
介万奇
无机材料学报
采用Bridgman法生长了x为0.1,0.22和0.4的四元稀磁半导体化合物MnxCd1-xIn2Te4晶体.研究了三根晶体中相的形貌、结构、成分和Mn0.1Cd0.9In2Te4晶体中各组元沿轴向和径向的成分分布.晶体生长初始端的组织为α+β+β1,随着生长的进行,形成β相的单相区.在晶锭末端,形成In2Te3类面心立方结构化合物.组分x增大后,MnxCd1-xIn2Te4晶体的吸收边向短波方向移动,禁带宽度则线性增大.磁化率测量结果表明:晶体在高温区的x-1-T曲线服从居里-外斯定律,在低温区(<50K)则表现出顺磁增强现象.
关键词:
MnxCd1-xIn2Te4
,
compositional distribution
,
infrared transmission spectra
,
mag- netic susceptibility
常永勤
,
安卫军
,
郭喜平
,
介万奇
无机材料学报
doi:10.3321/j.issn:1000-324X.2003.02.004
采用Bridgman法生长了x为0.1,0.22和0.4的四元稀磁半导体化合物MnxCd1-xIn2Te4晶体.研究了三根晶体中相的形貌、结构、成分和Mno.1Cd0.9In2Te4晶体中各组元沿轴向和径向的成分分布.晶体生长初始端的组织为α+β+β1,随着生长的进行,形成β相的单相区.在晶锭末端,形成In2Te3类面心立方结构化合物.组分x增大后,MnxCd1-xIn2Te4晶体的吸收边向短波方向移动,禁带宽度则线性增大.磁化率测量结果表明:晶体在高温区的x-1-T曲线服从居里一外斯定律,在低温区(＜50K)则表现出顺磁增强现象.
关键词:
MnxCd1-xIn2Te4
,
成分偏析
,
红外透射光谱
,
磁化率
张兰河
,
李德生
,
王旭明
,
张海丰
硅酸盐通报
为了提高生物除磷效率,研究采用AOA-SBR工艺进行了长期连续除磷实验,考察不同温度下碳源(乙酸钠、丙酸钠、葡萄糖)对PAO与GAO竞争的影响.结果表明:当温度由10℃升高至25℃时,利用丙酸钠作为碳源时,污泥含磷量与含糖量分别从7.2％和5.1％升高至7.9％和6.3％,PHA转化量升高了23.1 mg/L,厌氧释磷量从105.9 mg/L升高至149.9 mg/L,VSS/MLSS由71％降低至65％;利用乙酸钠作为碳源时,污泥含磷量与含糖量分别从6.9％和5.3％升高至7.6％和6.7％,PHA转化量升高了23.9 mg/L,厌氧释磷量从73.8 mg/L升高至108.8 mg/L,VSS/MLSS由73％降低至71％;利用葡萄糖作为碳源时,污泥含磷量与含糖量分别从5.8％和6.3％升高至6.6％和8.8％,PHA转化量升高了33.2 mg/L,厌氧释磷量从37.4 mg/L升高至43.2 mg/L,VSS/MLSS由80％升高至88％.当温度升高至30℃时,3个反应器均出现厌氧末期PHA浓度下降和糖原浓度升高,厌氧释磷量减少,污泥含磷量均下降,污泥含糖量上升,VSS/MLSS均很高.与葡萄糖相比,采用乙酸钠和丙酸钠作为碳源,有利于PAO生长繁殖,PAO为优势菌种,抑制GAO增殖.同时,低温更有利于PAO的生长繁殖.
关键词:
温度
,
碳源
,
SBR
,
PAO与GAO
