Xiaolei Su
材料科学技术（英）
The SiC powders by Al or N doping have been synthesized by combustion synthesis, using Al powder and NH4Cl powder as the dopants and polytetrafluoroethylene as the chemical activator. Characterization by X-ray diffraction, Raman spectrometer, scanning electron microscopy and energy dispersive spectrometer demonstrates the formation of Al doped SiC, N doped SiC and the Al and N co-doped SiC solid solution powders, respectively. The electric permittivities of prepared powders have been determined in the frequency range of 8.2−12.4 GHz. It indicates that the electric permittivities of the prepared SiC powders have been improved by the pure Al or N doping and decrease by the Al and N co-doping. The paper presents a method to adjust dielectric property of SiC powders in the GHz range.
关键词:
Silicon carbide
Xiaolei Su
材料科学技术（英）
The SiC powders by Al or N doping have been synthesized by combustion synthesis, using Al powder and NH4Cl powder as the dopants and polytetrafluoroethylene as the chemical activator. Characterization by X-ray diffraction, Raman spectrometer, scanning electron microscopy and energy dispersive spectrometer demonstrates the formation of Al doped SiC, N doped SiC and the Al and N co-doped SiC solid solution powders, respectively. The electric permittivities of prepared powders have been determined in the frequency range of 8.2−12.4 GHz. It indicates that the electric permittivities of the prepared SiC powders have been improved by the pure Al or N doping and decrease by the Al and N co-doping. The paper presents a method to adjust dielectric property of SiC powders in the GHz range.
关键词:
Silicon carbide
Xiaolei Su
材料科学技术（英）
The nonstoichiometric β-SiC powders were synthesized via combustion reaction of Si and C system in a 0.1 MPa nitrogen atmosphere, using Teflon as the chemical activator. The prepared powders were invistigated by XRD and Raman spectra. The results indicates that the cell parameters of all the prepared β-SiC powder
are smaller than the standard value of β-SiC because of generation of CSi defects. The complex permittivity of prepared products was carried out in the frequency range of 8.2−12.4 GHz. It shows that the dielectric property of prepared β-SiC powder decrease with increasing PTFE content. The effect of CSi defects on dielectric property of -SiC powder has been discussed.
关键词:
Silicon carbide
陆振华
,
许宝建
,
金庆辉
,
赵建龙
功能材料与器件学报
doi:10.3969/j.issn.1007-4252.2008.03.015
PDMS是制作微流控芯片的主要材料.PDMS芯片制作的主要方法是模塑法,模塑法要求有良好的塑性成型模具.SU-8以其良好的微加工特性,目前已广泛应用于微机械结构的制作,也用于PDMS塑性成型的模具.本文根据模具的特殊性,如平整、无裂纹、可多次使用等要求,研究了影响SU-8模具结构与基底材料硅片的黏附性和形成裂纹的因素,优化了SU-8微模具加工工艺,在以0.5℃/min进行升降温、210 mJ/cm2的曝光剂量、200℃条件下硬烘30min条件下得到较好的SU-8模具,提供了一种快速、复用性高、低成本的PDMS微芯片塑性成型的SU-8模具的制作方法.
关键词:
PDMS
,
塑性成型
,
SU-8模具
,
黏附性
刘俊
,
常梦洁
,
杜慧玲
高分子材料科学与工程
doi:10.16865/j.cnki.1000-7555.2016.04.023
利用静电纺丝和紫外光刻技术直接制备了不同结构的SU-8光刻胶纳米纤维薄膜及图案阵列.通过光学显微镜和扫描电子显微镜表征了纳米纤维的形貌、尺寸及结构.结果表明,通过改变SU-8光刻胶的黏度可形成不同直径和形貌的纤维结构,其中用SU-8 3010和SU-8 3050光刻胶制备的纳米纤维具有最优的形貌,其平均直径分别为470 nm和610nm.利用带有长方形缺口的铝箔和同轴电纺的方法分别制备了平行趋向和空心结构的纳米纤维.通过紫外光刻过程,可将SU-8纳米纤维加工成点阵、条状等不同形貌的图案阵列或结构,有望用作细胞培养研究的功能基底材料.
关键词:
静电纺丝
,
纳米纤维
,
SU-8光刻胶
,
纤维图案
张金娅
,
陈迪
,
朱军
,
李建华
,
方华斌
,
杨斌
功能材料与器件学报
doi:10.3969/j.issn.1007-4252.2005.02.027
采用新型SU-8光刻胶在UV-LIGA技术基础上制备了各种高深宽比MEMS微结构,研究了热处理和曝光两个重要因素对高深宽比微结构的影响,解决了微结构的开裂和倒塌等问题;优化了SU-8胶工艺,从而获得了最大深宽比为27:1的微结构.
关键词:
UV-LIGA技术
,
SU-8胶
,
高深宽比微结构
黄纯青
,
万广仁
量子电子学报
doi:10.3969/j.issn.1007-5461.2005.01.009
构造了激发双模SU(2)相干态|M,ξ;m〉=AMξma+mb+m|M,ξ〉,并用数值方法研究其非经典特性.结果表明,在双模SU(2)相干态的两场模同时增加光子后,两模光场仍然保持反关联特性,而且可以使光场对Cauchy-Schwartz不等式的破坏程度、光场的反聚束效应以及光子统计亚泊松分布等非经典特性得到加强.
关键词:
量子光学
,
非经典特性
,
激发
,
双模SU(2)相干态
尚海鑫
,
褚金奎
,
高佳丽
高分子材料科学与工程
运用分子动力学(MD)的研究方法,经过分子聚合、能量最优化和退火模拟等构建了不同长细比的SU-8光刻胶模型,模拟研究了在室温条件下不同长细比的SU-8胶纳米尺寸模型的弹性模量、泊松比、剪切模量等力学性能参数.结果表明,在室温下,随着SU-8胶模型长细比的增加,材料的扬氏模量和剪切模量逐渐增大,这一现象与微尺度SU-8胶模型的实验结果一致,表明有效长细比是微尺度下表征材料力学性能和尺寸效应的一个重要参数.
关键词:
SU-8光刻胶
,
力学性能
,
分子动力学
,
长细比
