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BINDING ENERGY OF THE SHALLOW DONOR IN (CdTe)_m /(ZnTe)_n STRAINED DOUBLE QUANTUM WELL

XING Jinhai(Department of Physics , Liaoning University , Shenyang 110036 , China)HUANG Heluan(Department of Electronic Science and Engineering , Liaoning University , 110036 , China)

金属学报(英文版)

In this paper the binding energy of the shallow.donor in CdTe/ZnTe strained double quantum well was calculated.The effect of the finite well potential and strain,resulting from the lattice mismatch,on the binding energy of the impurity is included in a variational framework.The binding energy is obtained as a function of the well width,barrier width,and impurity position in the barrier by using a variational method.The result of the present calculation shows that the variational law of the binding energy is similar to that of unstrained materials.

关键词: :binding energy , null , null , null , null

CORRELATION BETWEEN STRESS COMPONENTS AND STRESS CORROSION CRACKS IN BRASS Lecturer,Department of Materials Physics,University of Science and Technology Beijing,Beijing 100083,China

QIAO Lijie LIU Rui XIAO Jimei University of Science and Technology Beijing , Beijing , China

金属学报(英文版)

The effects of stress components on nucleation sites and propagation directions of stress cor- rosion cracks in brass were investigated with specimens under mode Ⅱ and mode Ⅲ loadings. The results indicated that under mode Ⅱ loading,stress corrosion cracks nucleated on the site with maximum normal stress component and propagated along the plane perpendieular to the maximum normal stress,under mode Ⅲ loading,the stress corrosion crack was not evident on the 45°plane due to the general corrosion in aqueous solution with high NH_4OH concentra- tion,while stress corroded in aqueous solution with low NH_4OH concentration, numerous cracks with spacings of 10—150μm were found on the 45°plane with maximum normal stress and no stress corrosion cracks was observed on the plane with maximum shear stress.

关键词: stress corrosion cracking , null , null , null

CURRENT STATUS OF HIGH-RESOLUTION ELECTRON-MICROSCOPY AND ITS APPLICATIONS TO MATERIALS SCIENCE AND CONDENSED MATTER PHYSICS

材料科学技术(英文)

The present paper summarizes the current status of high resolution elect;on microscopy ( HREM) and the applications of HREM to materials science and condensed matter physics. This review recounts the latest development of high resolution electron microscope, progress of HREM and the applications of HREM, including the crystal structure determination of microcrystalline materials and characterization of the local structure of the defects and nanostructured materials as well as qualitative and quantitative analysis of the grain boundaries, interfaces and interfacial reactions in the advanced materials by means of HREM in combination with electron diffraction, subnanometer level analysis, image simulation and image processing.

关键词: juxtaposed pentagonal antiprisms;two-dimensional quasicrystal;domain;boundary structures;close-packed phases;nanocrystalline materials;crystal-structure;copper oxidation;initial-stage;translational;symmetry;rotational symmetry

Current Status of High Resolution Electron Microscopy and Its Applications to Materials Science and Condensed Matter Physics

Douxing LI and Hengqiang YE (Laboratory of Atomic imaging of Solids , Institute of Metal Research , Chinese Academy of Sciences , Shenyang , 110015 , China)

材料科学技术(英文)

The present paper summarizes the current status of high resolution electron microscopy (HREM)and the applications of HREM to materials science and condensed matter physics. This review recounts the latest development of high resolution electron microscope, progress of HREM and the applications of HREM, including the crystal structure determination of microcrystalline materials and characterization of the local structure of the defects and nanostructured materials as well as qualitative and quantitative analysis of the grain boundaries, interfaces and interfacial reactions in the advanced materials by means of HREM in combination with electron diffraction,subnanometer level analysis, image simulation and image processing.

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