许小亮
,
何海燕
,
刘洪图
,
施朝淑
,
葛惟昆
,
Luo E Z
,
Sundaravel B
,
Wilson I H
液晶与显示
doi:10.3969/j.issn.1007-2780.2002.04.002
我们最近报道了大剂量Al+注入原生GaN后对其光学性质的影响.表明Al+的注入可能产生了某种深能级电子陷阱,由于电子陷阱俘获导带电子,导致发光猝灭.而经一定条件的退火处理,可使深的电子陷阱发生变化,因而与缺陷间的跃迁相关的黄色荧光可得到一定程度的恢复.由于注入样品的电阻率高达1012 Ωcm, 因此不能用已有的常规方法测量.我们为此发展了一种称为"光增强电流谱"(PSCS)新方法,用于测量高阻样品中的深能级.研究发现,在经过快速退火处理的样品中,不能消除由于注入产生的准连续深能级带;而在某种常规条件退火的样品中,发现了5个位于导带下1.77eV, 1.24eV, 1.16eV, 0.90eV和0.86eV的深电子陷阱,它们都是Al+ 注入经退火后形成的稳定结构.实验发现退火使注入产生的准连续深能级带转变为独立的深能级结构,虽不能使GaN的本征发光得到恢复,但对黄色荧光的恢复是有利的.此研究有助于了解退火处理对离子注入的GaN的电学结构与发光产生的影响.PSCS的意义在于它适用于测量一切高阻半导体样品中与非辐射跃迁相联系的深陷阱能级,而不仅仅适用于测量Al+注入GaN产生的深陷阱能级.
关键词:
退火
,
离子注入
,
GaN
,
深能级
许小亮
,
施朝淑
,
陈永虎
,
Luo E Z
,
Sundaravel B
,
Wilson I H
液晶与显示
doi:10.3969/j.issn.1007-2780.2002.02.002
首次报道了用不同浓度的Al离子注入于蓝宝石衬底上的GaN薄膜(注入能量为500keV、注入浓度为1014～1015 cm-2), 在做了不同温度和不同时间的快速热退火处理以及常规热退火处理后,在12K下用He-Cd 激光(325nm)激发得到其发射谱.结果显示, 经大剂量Al注入后的样品,其光致发光谱中3.45eV的带边激子发光以及2.9 ～ 3.3eV的4个声子伴随峰消失.此表明大剂量Al注入对GaN的晶体结构造成严重的损伤,以致本征发光消失.经1014cm-2剂量Al注入后的样品,在N2气氛中退火处理后,2.2eV缺陷发光峰得到了一定程度的恢复.而且,经常规退火处理后,此发射峰比快速退火处理的样品发射峰恢复得更好(其积分光强高3倍).相似的结果亦显示于1015 cm-2 浓度的Al 注入的样品.2.2eV 黄色荧光源于GaN的缺陷(如Ga空位(VGa), 或VGa-H2,或VGa-ON 复合体),其能级位于价带顶以上约1.1eV处.荧光发射可以来自"导带-缺陷能级"的跃迁,也可能来自浅施主(如N位O,能级位于导带下～10 meV)至上述缺陷能级之间的跃迁.I-V 测量显示,Al的注入区成为～ 1012 Ω*cm-1高阻膜,这表明Al的注入可能产生了某种深的电子陷阱,由于电子陷阱可俘获导带电子,导致发光猝灭.而退火可使与黄色荧光相关的缺陷得到部分恢复,因而2.2eV发射峰有所恢复.
关键词:
GaN
,
发光特性
,
退火
,
Al 离子注入
Journal of Alloys and Compounds
The isothermal section at 700 degrees C in the Co-rich ternary Sm-Co-B system was determined by means of X-ray diffraction. In this range, nine ternary borides were observed: Sm3Co13B2, SmCo4B, Sm3Co11B4, Sm2Co7B3, SmCo3B2, Sm2Co14B, SmCo12B6, SmCo4B4, SmCo2B2. The first five borides are members of the homologous series Smm + nCo5m + 3nB2n formed by alternative stacking m layers of SmCo5 with n layers of SmCo3B2 along the c-axis. The compound Sm3Co13B2 was not reported in previous isothermal sections found in the literature. (C) 2000 Elsevier Science S.A. All rights reserved.
关键词:
Sm-Co-B;phase diagram;magnetic-properties
Journal of Alloys and Compounds
The isothermal section at 700 degrees C in the Go-rich ternary Gd-Co-B system was determined by means of x-ray diffraction. In this range, nine ternary borides were observed: Gd3Co13B2, GdCo4B, Gd3Co11B4, Gd(2)Go(7)B(3), GdCo3B2 Gd2Co14B, GdCo12B6, GdCo4B4, GdGo(2)B(2). This isothermal section at 700 degrees C is similar to other isothermal sections found in the literatures, but they do not include the compounds Gd3Co13B2 and Gd2Co14B. The first five borides are members of the homologous series Gdm + nCo5m + 3nB2n, which is formed by alternative stacking of m layers of GdCo5 with n layers of GdCo3B2 along the c-axis. (C) 2000 Elsevier Science S.A. All rights reserved.
关键词:
Gd-Co-B;phase diagram;earth
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
We have applied the embedded atom method (EAM). to calculate boundary concentration distributions of Ni, Al and B, and B probabilities in the "interstitial" and, the "substitutional" sites, at the Ni3Al-x at.% B (100% Ni\100% Ni) [001]/Sigma5(210)/36.87 degrees. grain boundary at the equilibrium. We propose that the bulk effects of B on the grain boundary include the positive effect on the Ni enrichment at the grain boundary, i.e. the B atoms induce Ni atoms to substitute into Al sites, the negative effect on it, i.e. the B atoms substitute into Ni sites, and the neutral effect on it, i.e. the B atoms insert into interstices in the grain boundary. Our calculations show that owing to combination of the positive effect and the negative effect, corresponding to B-enrichment increasing, the Ni-enrichment and the Al-depletion become more and more obvious, when x increases from 0.1 to 0.5. Then, corresponding to B-enrichment decreasing, the Ni-enrichment and the Al-depletion also become more and more obvious, when x decreases from 0.9 to 0.5. Thus, between low (x = 0.1) and high (x = 0.9) B bulk concentrations, there is a B bulk concentration (x = 0.5), at which the Ni-enrichment and the Al-depletion become the most obvious, even if Ni is approximately saturated. (C) 2001 Elsevier Science B.V. All rights reserved.
关键词:
computer-simulation;boron;segregation;fracture;metals;alloys
金属学报
Volu扣ne 27SeriesB1991AUTHOR INDEX CCAO Guanghan(曹光旱)············……6一B科6CAo weijie(曹卫恋)..················……5一B32oCAO Yilin(曹益林)··················……6一B443CHANG Xin(常听)···············……1一B48CHE Guang邻n(车广灿)·············一6一B科0CHEN Erbao(陈二保)···············……6一B410CHEN Jia....
关键词:
Journal of Alloys and Compounds
Nd-Fe-(B.C) alloys have been synthesized by mechanical alloying and subsequent heat-treatment, with B4C as one of the starting materials. It is found that when the pure B4C is milled alone, it proves difficult to decompose. When the B4C compound is milled with Nd and Fe, the complete decomposition of B4C and the formation of Nd2Fe14(B,C) phase is observed. Furthermore, the competition between B and C atoms for entering the Nd2Fe14B lattice. the effects of the B4C content on the structure and the magnetic properties of Nd2Fe14(B,C)-based alloys are investigated. A coercivity as high as 18.3 kOe and the maximum energy product of 10.4 MGOe have been achieved for the Nd-Fe-(B,C) alloys. (c) 2005 Elsevier B.V. All rights reserved.
关键词:
permanent magnets;mechanical alloying;fe-c alloys;permanent-magnets;r2fe14c;nd
Materials Letters
The effects of P and B on the creep behavior of 718 alloys are discussed in this paper. The result implies that P and B have little effect on the gamma" and gamma' phases of the alloy, but they can enhance the grain boundary strength by segregating there, which can be of beneficial to the higher creep properties. P also may increase the grains strength through solid solution. The beneficial effect of P and B were presented in both standard IN718 alloy and DA718 alloy. Adding P and B together does a better work than adding P alone. (c) 2006 Elsevier B.V. All rights reserved.
关键词:
P and B;718 alloy;creep;grain boundaries;heat treatment;stress rupture;phosphorus;superalloy;boron
