材料期刊网，材料期刊，材料类期刊，材料期刊投稿

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Chen系统的状态变量周期性反馈控制

量子电子学报 doi:10.3969/j.issn.1007-5461.2007.05.014

采用非线性反馈控制,用附加了带参数的正弦项对Chen系统进行了有效的控制.随着参数k的逐渐增大,系统的动力学行为呈现出一系列的变化.数值研究结果表明:随控制参数的增大,驱动信号的强度渐大,混沌系统由混沌运动到周期轨道,最终到一相点.

关键词: 混沌 , Chen系统 , 不动点 , Lyapunov指数 , 反馈控制

1998 COMPREHENSIVE TABLE OF CONTENTS

N。1Atmospheric Corrosivlty for Steels………………………………………………… .LIANG Caideng HO[I i。-tat（6）Caustic Stress Corrosion Cr。king of Alloy 800 Part 2.The Effect of Thiosul执e……………………………………… KONG De-sheng YANG Wu ZHAO Guo-zheng HUANG De.ltL。ZHANG Yu。。he CHEN She。g-bac（13）SERS slid E16CttOCh6iniC81 Stlldy Of Illhibit1Oli M6ch＆tllsth Of ThlollY68 Oil ITOll ID H....

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Congratulations to Prof. Dr. WEI Shoukun's 100th Birthday

金属学报(英文版)

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Dedicated to Prof. Dr. WEI Shoukun's 100th birthday

稀有金属（英文版）

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SIF expressions for center cracked strip loaded by uniformly distributed stress acting on central portion of crack - Corrections of Chen's results - Response

International Journal of Fracture

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Ion sputter erosion in metallic glass-A response to "Comment on: Homogeneity of Zr(64.13)Cu(15.75)Ni(10.12)Al(10) bulk metallic glass" by L-Y. Chen, Y-W. Zeng, Q-P. Cao, B-J. Park, Y-M. Chen, K. Hono, U. Vainio, Z-L. Zhang, U. Kaiser, X-D. Wang, and J-Z Jiang J. Mater. Res. 24, 3116 (2009)

Journal of Materials Research

The morphology of the dark and bright regions observed by transmission electron microscopy for the Zr(64.13)Cu(15.75)Ni(10.12)Al(10) bulk metallic glass strongly depends on the ion beam parameters used for ion milling. This indicates that the ion beam could introduce surface fluctuation to metallic glasses during ion milling.

关键词: room-temperature

第27卷B辑作者索引

金属学报

Volu扣ne 27SeriesB1991AUTHOR INDEX CCAO Guanghan(曹光旱)············……6一B科6CAo weijie(曹卫恋)..················……5一B32oCAO Yilin(曹益林)··················……6一B443CHANG Xin(常听)···············……1一B48CHE Guang邻n(车广灿)·············一6一B科0CHEN Erbao(陈二保)···············……6一B410CHEN Jia....

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ION HEATING PROCESS DURING PLASMA IMMERSION ION IMPLANTATION

X.B. Tian , X.F. Wang , A.G. Liu , L.P. Wang , S. Y. Wang , B. Y. Tang and P. K. Chu 1)Advanced Welding Production & Technology National Key Laboratory , Harbin Institute of Technology , Harbin 150001 , China 2)Department of Physics & Materials Science , City University of Hong Kong , China

金属学报(英文版)

The research on plasma immersion ion implantation has been conducted for a little over ten years. Much is needed to investigate including processing technlogy, plasma sheath dynamics, interaction of plasma and surface, etc. Of the processing methods elavated temperature technique is usually used in PIII to produce a thick modified layer by means of the thermal diffusion. Meanwhile plasma ion heating is more recently developed by Ronghua Wei et al[1]. Therefore the temeperature is a critical parameter in plasma ion processing. In this paper we present the theoretical model and analysize the effect of imlantation voltage, plasma density, ion mass,etc on the temperature rise.

关键词: plasma immersion ion implantation , null , null