张鸿冰
,
倪乐民
,
徐祖耀
金属学报
经 LFG(ΔG~(γ→a))-Mogutnov(ΔG_(Fe)~(γ→a))、徐祖耀(Shu-A)(ΔG~(γ→a))-Orr-Chipman(ΔG_(Fe)~(γ→a))、徐祖耀(Shu-B)(ΔG~(γ→a))-Orr-Chipman(ΔG_(Fe)~(γ→a))组合,均可算得 Fe-Mn-C 合金的 Ms 温度且与实验值十分符合.所得结果经数学处理,得 Fe-Mn-C 系 Ms 与成分的关系为:Ms(K)=817.4-7513.4xc-4141.9x_(Mn)-32083.5x_Cx_(Mn)(LFG)Ms(K)=829.9-7580.5x_C-4166.0x_(Mn)-15727.8x_Cx_(Mn)(SHU-A)Ms(K)=829.2-7276.1x_C-2915.4x_(Mn)-43825.7x_Cx_(Mn)(SHU-B)其线性相关系数均大于0.992.C 和 Mn 浓度均使合金的 Ms 线性地降低,而碳的作用几乎是Mn 的两倍.处理中引入了合金元素交互作用项(x_Cx_(Mn)),表明 C,Mn 相互加剧对 Ms 的影响。随含 C,Mn 量的增加,相变驱动力均单调地增加,而不存在奇异点.Ms 和相变驱动力的计算值均依赖于ΔG_(Fe)~(γ→a)项.
关键词:
Journal of Materials Processing Technology
The crystallization temperatures and other thermal properties have been measured systematically for two ternary Cu-Ni-P and two quaternary Cu-Ni-Sn-P amorphous systems. The dependence of crystallization temperature on the composition for the four alloy systems can not be described basically by the usual used Naka rule. The Gibbs free energy of crystallization can be calculated for the alloy systems with the model proposed by Shu et al. Using the calculated free energy of crystallization, it is still not possible to properly describe all of the crystallization temperatures of the alloy systems. However, it has been found that the correlation between the crystallization temperature and the content of the alloy systems can be reasonably explained by the nucleation and growth rates of a new phase for the classical theory of phase transformation. It has been established that the classical theory of phase transformation can be used to describe the thermal stability of the Cu-based amorphous alloys during their crystallization process. (C) 1999 Published by Elsevier Science S.A. All rights reserved.
关键词:
thermal stability;amorphous alloys;Cu-P based alloy systems;classical;theory of phase transformation;solid-liquid interface;structural model;glasses
盖红星
,
李建军
,
韩军
,
邢艳辉
,
邓军
,
俞波
,
沈光地
,
陈建新
量子电子学报
doi:10.3969/j.issn.1007-5461.2005.01.016
采用Shu Lien Chuang方法计算了AlInGaAs/AlGaAs应变引起价带中重、轻空穴能量变化曲线,在Harrison模型的基础上详细地计算了AlInGaAs/AlGaAs和GaAs/AlGaAs量子阱电子、空穴子能级分布并且进一步研究了这两种材料在不同注入条件下的线性光增益.进一步计算比较可以得出AlInGaAs/AlGaAs应变量子阱光增益特性要优于GaAs/AlGaAs非应变量子阱增益特性,因此AlInGaAs/AlGaAs应变量子阱半导体材料应用于半导体激光器比传统GaAs/AlGaAs材料更具优势.
关键词:
光电子学
,
应变量子阱
,
光增益
,
AlInGaAs
,
半导体激光器
