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ITO Films Prepared by Long-throw Magnetron Sputtering without Oxygen Partial Pressure

Miaoju Chuang

材料科学技术（英文）

This study investigates the influence of the radio frequency (rf) power and working pressure on the properties of indium tin oxide (ITO) thin films, which were prepared by long-throw rf magnetron sputtering technique at room temperature. For 200 nm thick ITO films grown at room temperature in pure argon pressure of 0.27 Pa and sputtering power of 40 W, sheet resistant was 26.6 Ω/sq, and transmittance was higher than 90% (at wavelength 500 nm). An X-ray diffraction analysis of the samples deposited at room temperature reveal a structural change from amorphous to mixed amorphous/polycrystalline structure at (222) and (400) texture with increasing rf power. The surface composition of ITO films was characterized by X-ray photoelectron spectroscopy (XPS). Oxygen atoms in both amorphous and crystalline ITO structures were observed from O 1s XPS spectra

关键词: Indium tin oxide (ITO) , rf magnetron sputtering , X-ray photoelectron spectroscopy , X-ray diffraction

GaxIn1-xAs/GaInAsP应变量子阱结构能带的计算

高少文 , 陈意桥 , 李爱珍

功能材料与器件学报 doi:10.3969/j.issn.1007-4252.2002.03.002

对含有Luttinger-Kohn哈密顿量的有效质量方程,利用S.L.Chuang提出的传递矩阵法,计算了量子阱中不同Ga组分的GaxIn1-xAs/GaInAsP应变量子阱结构的能带,该结构可被选作980nm光通信泵浦激光器的有源层.研究还得到了GaxIn1-xAs/GaInAsP双应变量子阱结构中电子和空穴的能级以及能级的色散关系.

关键词: GaInAs/GaInAsP , 应变量子阱 , 色散

AlInGaAs/AlGaAs应变量子阱增益特性研究

盖红星 , 李建军 , 韩军 , 邢艳辉 , 邓军 , 俞波 , 沈光地 , 陈建新

量子电子学报 doi:10.3969/j.issn.1007-5461.2005.01.016

采用Shu Lien Chuang方法计算了AlInGaAs/AlGaAs应变引起价带中重、轻空穴能量变化曲线,在Harrison模型的基础上详细地计算了AlInGaAs/AlGaAs和GaAs/AlGaAs量子阱电子、空穴子能级分布并且进一步研究了这两种材料在不同注入条件下的线性光增益.进一步计算比较可以得出AlInGaAs/AlGaAs应变量子阱光增益特性要优于GaAs/AlGaAs非应变量子阱增益特性,因此AlInGaAs/AlGaAs应变量子阱半导体材料应用于半导体激光器比传统GaAs/AlGaAs材料更具优势.

关键词: 光电子学 , 应变量子阱 , 光增益 , AlInGaAs , 半导体激光器

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