Lixiu YAO
,
Jie YANG
,
Chenzhou YE
,
Nianyi CHEN
材料科学技术（英文）
Four parameters, phi (electronegativity), n(ws)(1/3) (valence electron density in Wagner-Seitz cell), R (Pauling's metallic radius) and Z (number of valence electrons in atom), and the pattern recognition methods were used to investigate the regularities of formation of ternary intermetallic compounds between three transition elements. The obtained mathematical model expressed by some inequalities can be used as a criterion of ternary compound formation in "unknown" phase diagrams of alloy systems.
关键词:
Lixiu YAO
,
Nianyi CHEN
,
Jie YANG
材料科学技术（英文）
The pattern recognition methods and a four-parameter model, Eased on extension of Miedema's cellular model of alloy phases, are used to study the regularities of formation of ternary compounds between one transition element (T) and two non-transition elements (N, N') (T-N-N' system). The influences of phi (electronegativity), n(ws)(1/3)(valence electron density in Wagner-Seitz cell), R(Pauling's metallic radii) and Z (number of valence electrons in atom) on the formation of the ternary intermetallic compounds were investigated.
关键词:
Applied Physics a-Materials Science & Processing
Amorphous aluminate YAlO3 (YAO) thin films on n-type silicon wafers as gate dielectric layers of metal - oxide semiconductor devices are prepared by pulsed laser deposition. As a comparison, amorphous aluminate LaAlO3 (LAO) thin films are also prepared. The structural and electrical characterization shows that the as-prepared YAO films remain amorphous until 900 degrees C and the dielectric constant is similar to 14. The measured leakage current of less than 10(-3) A/cm(2) at a bias of V-G = 1.0 V for similar to 40-nm-thick YAO and LAO films obeys the Fowler Nordheim tunneling mechanism. It is revealed that the electrical property can be significantly affected by the oxygen pressure during deposition and post rapid thermal annealing, which may change the fixed negative charge density at the gate interface.
关键词:
hafnium oxide;si;stability;silicon;transition;dioxide;devices;hfo2
