XING Jinhai(Department of Physics
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Liaoning University
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Shenyang 110036
,
China)HUANG Heluan(Department of Electronic Science and Engineering
,
Liaoning University
,
110036
,
China)
金属学报(英文版)
In this paper the binding energy of the shallow.donor in CdTe/ZnTe strained double quantum well was calculated.The effect of the finite well potential and strain,resulting from the lattice mismatch,on the binding energy of the impurity is included in a variational framework.The binding energy is obtained as a function of the well width,barrier width,and impurity position in the barrier by using a variational method.The result of the present calculation shows that the variational law of the binding energy is similar to that of unstrained materials.
关键词:
:binding energy
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D.L. Ma and X.L. Mu Departmentof Physics
,
Liaoning University
,
Shenyang 110036
,
China
金属学报(英文版)
The propertiesof As+ implantedsilicon with anenergy160kev, differentdosesand anneal ing temperatures (500 700℃) were studied by means of x ray double crystaldiffraction( DCD) and ellipometricspectra ( ES) . Therockingcurvesof DCDweresimulated by multi layer modelof Dynamicaltheory,toobtainstrain distributionsasafunctionof depths. The1×1016 cm 2 annealed at600℃wasfoundthataepitaxiallayer wasformed . The ESresult provedtheseconclusions.
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