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Recrystallization of a Single Crystal Nickel-Base Superalloy

ZHANG Bing , TAO Chun-hu , LU Xin , LIU Chang-kui , HU Chun-yan , BAI Ming-yuan

钢铁研究学报(英文版)

A series of experiments of investigating the recrystallization of single crystal DD3 superalloy were carried out. The threshold temperature for recrystallization and the effect of annealing temperature on recrystallization were studied. The results show that the threshold temperature for recrystallization of the shotpeened DD3 samples is between 1 000 ℃ and 1 050 ℃ under the condition of annealing for 2 h, and the recrystallization depth increases with the rise of the annealing temperature. Below 1 150 ℃, the recrystallization depth increases slowly with the temperature climbing, while above 1 150 ℃, the recrystallization depth increases quickly with the rise of the temperature. The solution of the γ′ phase is a critical factor of the recrystallization behavior of DD3 superalloy. In addition, the kinetics and microstructural evolution of recrystallization at 1 200 ℃ were also studied. It is found that the recrystallization progresses rapidly at 1 200 ℃ through the growth of fully developed recrystallized grains, and the recrystallization process on the shotpeened surface is similar to that of wrought materials, including nucleation of recrystallization, growth of new grains into the matrix, and growth of new grains by swallowing up each other.

关键词: single crystal superalloy;recrystallization;shot peening

ACRT-B法生长的MnxCd1-xIn2Te4晶体的溶质分凝特性

常永勤 , 介万奇 , 郭喜平 , 陈福义 , 安卫军

功能材料

研究了ACRT-B法生长的Mn0.1Cd0.9In2Te4晶体中界面的形状和各组元沿轴向的分布规律及其分凝因数.发现结晶界面为椭球形;采用理想配比生长MnxCd1-xIn2Te4晶体,其4种组元并不按(Mn,Cd):In:Te=1:2:4比例结晶,而是要重新分布;通过数学方法处理实验数据得到Mn,Cd和In的分凝因数在α相区分别为1.286、1.9257和0.7294,在β相区则分别为1.12、1.055和0.985.

关键词: ACRT-B法 , MnxCd1-x In2Te4 , 界面 , 分凝因数

Bridgman法生长的MnxCd1-xIn2Te4晶体相形成规律和物理性能研究

常永勤 , 安卫军 , 郭喜平 , 介万奇

无机材料学报

采用Bridgman法生长了x为0.1,0.22和0.4的四元稀磁半导体化合物MnxCd1-xIn2Te4晶体.研究了三根晶体中相的形貌、结构、成分和Mn0.1Cd0.9In2Te4晶体中各组元沿轴向和径向的成分分布.晶体生长初始端的组织为α+β+β1,随着生长的进行,形成β相的单相区.在晶锭末端,形成In2Te3类面心立方结构化合物.组分x增大后,MnxCd1-xIn2Te4晶体的吸收边向短波方向移动,禁带宽度则线性增大.磁化率测量结果表明:晶体在高温区的x-1-T曲线服从居里-外斯定律,在低温区(<50K)则表现出顺磁增强现象.

关键词: MnxCd1-xIn2Te4 , compositional distribution , infrared transmission spectra , mag- netic susceptibility

Bridgman法生长的MnxCd1-xIn2Te4晶体相形成规律和物理性能研究

常永勤 , 安卫军 , 郭喜平 , 介万奇

无机材料学报 doi:10.3321/j.issn:1000-324X.2003.02.004

采用Bridgman法生长了x为0.1,0.22和0.4的四元稀磁半导体化合物MnxCd1-xIn2Te4晶体.研究了三根晶体中相的形貌、结构、成分和Mno.1Cd0.9In2Te4晶体中各组元沿轴向和径向的成分分布.晶体生长初始端的组织为α+β+β1,随着生长的进行,形成β相的单相区.在晶锭末端,形成In2Te3类面心立方结构化合物.组分x增大后,MnxCd1-xIn2Te4晶体的吸收边向短波方向移动,禁带宽度则线性增大.磁化率测量结果表明:晶体在高温区的x-1-T曲线服从居里一外斯定律,在低温区(<50K)则表现出顺磁增强现象.

关键词: MnxCd1-xIn2Te4 , 成分偏析 , 红外透射光谱 , 磁化率

Lu-Si-O体系在高温水蒸气环境中的腐蚀行为

洪智亮 , 成来飞 , 鲁琳静 , 张立同 , 王一光

无机材料学报 doi:10.3724/SP.J.1077.2010.00186

采用溶胶-凝胶法制得三种镥硅酸盐体系粉体材料. 以氧化物的摩尔比来表示此三种粉体, 分别为:Lu2O3·SiO2Lu2O3·2SiO2Lu2O3·2.26SiO2. 在1400℃、50%H2O-50%O2静态常压气氛下, 研究了它们的耐水蒸气腐蚀性能.以单位面积重量变化率表征材料的耐水蒸气腐蚀性能, 结合X射线衍射(XRD)、傅里叶红外光谱(FTIR)和扫描电镜能谱分析(SEMEDS)等分析手段, 揭示了镥硅酸盐体系在高温水蒸气环境中的腐蚀机制和反应机理. 结果表明:三种原始粉体主要物相依次为:Lu2SiO5+Lu2Si2O7Lu2Si2O7+SiO2Lu2Si2O7+SiO2. 在水蒸气作用下, Lu2SiO5相与Al2O3反应生成新相Lu3Al5O12, 而Lu2Si2O7相并未受到水蒸气的作用而发生任何反应, 表现出优异的化学稳定性.

关键词: Lu2SiO5 , Lu2Si2O7 , environmental barrier coating (EBC) , water vapor corrosion

Lu-Si-O体系在高温水蒸气环境中的腐蚀行为

洪智亮 , 成来飞 , 鲁琳静 , 张立同 , 王一光

无机材料学报 doi:10.3724/SP.J.1077.2010.00186

采用溶胶-凝胶法制得三种镥硅酸盐体系粉体材料.以氧化物的摩尔比来表示此三种粉体,分别为:Lu_2O_3·SiO_2、Lu_2O_3·2SiO_2和Lu_2O_3·2.26SiO_2.在1400℃、50%H_2O-50%O_2静态常压气氛下,研究了它们的耐水蒸气腐蚀性能.以单位面积重量变化率表征材料的耐水蒸气腐蚀性能,结合X射线衍射(XRD)、傅里叶红外光谱(FTIR)和扫描电镜能谱分析(SEM-EDS)等分析手段,揭示了镥硅酸盐体系在高温水蒸气环境中的腐蚀机制和反应机理.结果表明:三种原始粉体主要物相依次为:Lu_2SiO_5+Lu_2Si_2O_7、Lu_2Si_2O_7+SiO_2和Lu_2Si_2o_7+SiO_2.在水蒸气作用下,Lu_2SiO_5相与Al_2O_3反应生成新相Lu_3Al_5O_(12)而Lu_2Si_2O_7相并未受到水蒸气的作用而发生任何反应,表现出优异的化学稳定性.

关键词: Lu_2SiO_5 , Lu_2Si_2O_7 , 环境障碍涂层 , 水蒸气腐蚀

Lu2O3和Lu2O3∶Eu3+单分散球形粉体合成及其荧光性能研究

马畅 , 李晓东 , 董宇 , 刘绍宏 , 朱琦 , 李继光 , 霍地 , 孙旭东

中国稀土学报 doi:10.11785/S1000-4343.20130411

Lu(NO3)3和尿素为原料,采用均相沉淀法合成镥盐前驱体,研究Lu3+浓度、尿素/Lu3+摩尔比R对前驱体形貌的影响.结果表明,在反应温度为95℃时,低Lu3+浓度有利于单分散球形粉体的合成,并且适当的调整R值可将单分散球形颗粒尺寸控制在180 ~ 270 nm之间.在此基础之上,研究Eu3+掺杂Lu2O3单分散球形荧光粉体的合成,探讨了Eu3+的掺杂量(1%,3%,5%,7%,9%(原子分数))及煅烧温度(600~ 1200℃)对颗粒形貌及其荧光性能的影响.结果表明,Eu3+的掺杂使所得(Lu,Eu)盐前驱体颗粒尺寸远小于单纯的Lu盐前驱体,且Eu含量对荧光粉的荧光强度有着显著的影响,荧光淬灭浓度为5%.在考察的煅烧温度范围内,荧光粉的荧光强度随煅烧温度的提升而增强.

关键词: Lu2O3 , Eu3+ , 均相沉淀 , 单分散球形 , 前驱体 , 荧光性能 , 稀土

TEMPERATURE-DEPENDENCE OF THE MAGNETIC-PROPERTIES OF THE RARE-EARTH TRANSITION-METAL INTERMETALLIC LU2FE14C

Journal of Magnetism and Magnetic Materials

Magnetization curves of the ternary tetragonal compound Lu2Fe14C were measured in an extracting-sample magnetometer in the temperature range from 1.5 to 300 K. The temperature dependence of the magnetic properties of Lu2Fe14C is discussed.

关键词: anisotropy

Effects of Phase Composition on Microstructure and Mechanical Properties of Lu2O3-doped Porous Silicon Nitride Ceramics

Quan Li

材料科学技术(英文)

Porous silicon nitride ceramics (Si3N4) were fabricated by pressureless sintering using different particle size of silicon nitride powder. Lu2O3 was used as sintering additive. According to phase relationships in the ternary system Si3N4-SiO2-Lu2O3, porous Si3N4 ceramics with different phase composition were designed through the change of the content of SiO2 which was formed by the oxidation at 800°C in air. Porous Si3N4 with different phase compositions was obtained after sintering at 1800°C in N2 atmosphere. A small content of SiO2 favored the formation of secondary phase Lu4Si2O7N2, while large content of SiO2 favored the formation of secondary phase Lu2Si2O7 and Si2N2O. Porous Si3N4 ceramics with secondary phase Lu4Si2O7N2 had a flexural strength of 207 MPa, while that with secondary phase Si2N2O and Lu2Si2O7 had lower flexural strength.

关键词: Porous silicon nitride ceramics

溶剂热法制备不同形貌纳米Lu2O3粉体

邱华军 , 施鹰 , 谢建军 , 谢杰

人工晶体学报

本文以水、丙酮、乙醇、乙二醇为溶剂,采用溶剂热法制备了不同形貌的纳米氧化镥(Lu2O3粉)粉体前驱体,将前驱体在400~800 ℃条件下煅烧2 h制得了不同形貌的Eu3+:Lu2O3粉体.研究发现,所用溶剂的物理性质对产生特定形貌的样品具有重要的影响,以水和丙酮为溶剂,可制得具有较高长径比的Lu2O3纳米棒,而当溶剂为乙醇和乙二醇时,所得Lu2O3粉体为等轴状的纳米颗粒.

关键词: 溶剂热法 , 氧化镥 , 纳米粉体 , 形貌

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