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STRAIN INDUCED PRECIPITATION OF Ti(V)N(C)IN HIGHCARBON STEEL

FANG Shufang , ZHANG Jian Panzhihua Institute of Iron and Steel Research , Panzhihua , China Laboratory of Physics , Panzhihua Institute of Iron and Steel Research , Dukou City , 617000 Sichuan , China

金属学报(英文版)

The precipitation of Ti(V)N(C)in high-carbon steel PD_3 during thermomechanicol treatment at austenitic temperatures after deformation has been observed.The average size of Ti(V)N(C)particles may reduce with the increase of strain and the decrease of thermomechanical treatment temperature,and vise versa.The growth of Ti(V)N(C)particles at 920°C is found to be controlled by the interface reaction between precipitated particles and matrix.

关键词: Ti(V)N(C) , null , null

INHERITANCE OF PRECIPITATED V_4C_3 IN MARTENSITIC TRANSFORMATION

XIE Changsheng SUN Peizhen ZHAO Jiansheng SUN Desheng Huazhong University of Science and Technology , Wuhan , China

金属学报(英文版)

The inheritance phenomenon of precipitated V_4C_3 in martensitic transformation has been in- vestigated by means of electron diffraction and matrix analysis.A crystallographic orientation relation among austenite,martensite and V_4C_3 carbide was found to be. (010)_A∥( 10)_M∥(010)_(v_4c_3), [10 ]∥[11 ]_M [10 ]_(v_4c_3) The V_4C_3 first precipitated in austenite,and then was inherited to martensite.Although cer- tain orientation relation was kept between V_4C_3 and martensite,the interfacial structural ana- lysis pointed out that the biphase interfacial energy is higher than that determined by Baker-Nutting relation,thus it is metastable.Because the V_4C_3 precipitated along the crystalline defects in austenite,they could be inherited to martensite.

关键词: V_4C_3 , null , null , null

INTERACTION BETWEEN V_4C_3 PARTICLES AND DEFORMATION TWINS

XIE Changsheng Huazhong University of Science and Technology , Wuhan , China

金属学报(英文版)

By using Moire′ pattern formed by the double diffraction of precipitated V_4C_3 and matrix of γ-phase,the nature of the structure of the interface between precipitated V_4C_3 and matrix as well as the retarding effect of V4C3 particles on the development of deformation twins have been investigated.It is shown that partially coherent interfaces exist between V_4C_3 and ma- trix.Twinning dislocations may transform into interfacial dislocations under external stress, and may move continuously through bypassing or cross-sliping.

关键词: V_4C_3 , null , null

V钢中V(C,N)沉淀强化作用的研究

徐曼 , 孙新军 , 刘清友 , 董瀚 , 雍岐龙 , 黄金亮

钢铁钒钛 doi:10.3969/j.issn.1004-7638.2005.03.002

通过实验室轧钢试验,研究了三种高V钢轧制状态下的组织的和力学性能,并用透射电镜观察了V(C,N)析出的状况.结果表明,高V钢中可以获得单相的铁素体组织,并可以获得较高的强度,最高的屈服强度值达到525 MPa.对C3钢而言,由V(C,N)析出颗粒的沉淀强化造成的屈服强度增量最大可达244 MPa.透射电镜观察结果表明,高V钢中容易获得相间析出.试验获得的V(C,N)析出颗粒为4~10 nm,经计算分析,该尺寸在V(C,N)最大沉淀强化效果的范围.

关键词: V , 单相铁素体组织 , 沉淀强化 , 相间析出

原位合成Fe-V(C,N)复合材料

杨廷贵 , 王一三 , 程凤军

钢铁钒钛 doi:10.3969/j.issn.1004-7638.2007.01.006

采用粉末冶金方法原位合成Fe-V(C,N)复合材料.应用SEM和XRD分析了复合材料显微组织和物相结构.发现在1200℃烧结时,活性的碳、氮原子降低了ó-(FeV)相的稳定性,生成了a-Fe相和均匀分布在基体中的V(C,N)颗粒.氮气的存在抑制了原位合成的V(C,N)颗粒在烧结后期的长大,最终V(C,N)颗粒尺寸在O.5~3μm之间,体积分数超过50%.在重负荷干滑动磨损试验中表现出很高的耐磨性.

关键词: 粉末冶金 , 原位合成 , Fe-V(C,N) , V(C,N) , 复合材料

聚酰亚胺LB膜MIS结构C-V特性

林海安 , 吴冲若

材料研究学报

本文报道了Al/LB聚酰亚胺膜/P-Si(100)MIS结构的CV特性研究结果.67层LB膜样品C-V特性近乎理想,具有负的固定电荷密度约1011cm-2量级,平带时滞后小于0.3V对于MIS隧道结,除了在-0.5—-1.5V间具有反型层箝位产生的电容峰外,在-1.5—-4V间还出现了另一电容峰值.假设在强电场下隧穿能力剧增,从而结构由隧穿限制区重新进入半导体限制区,可以解释这一峰值的出现,考虑到少子注入引入的扩散电容,正、反向扫描时电容峰值的差别可以得到解释

关键词: LB聚酰亚胺膜 , null , null , null , null

BUTTERFLY MARTENSITE NUCLEATION IN AN Fe-Ni-V-C ALLOY

CHEN Qizhi WU Xingfang KE Jun (T Ko) University of Science and Technology Beijing , Beijing , China

金属学报(英文版)

The butterfly martensite nuclei in an Fe-Ni-V-C alloy were observed under TEM,they con- sist of enveloping dislocations with Burger's vector(1/2)[]_(fcc) and arrays of dislocations with Burger's vector(1/2)[10]_(fcc) piled up within the former.The enveloping dislocations and the arrays of dislocations provide the required shear when the planes(11)_(fcc)move with each other to alter their stacking order and change into the planes(110)_(bcc) respectively.The necessary adjustment of the spacings is provided by the dislocations in martensite.The crystallographic relationship after double-shear is K-S one.

关键词: butterfly martensite , null , null , null

V8C7有序-无序相变及衍射消光规律的研究

颜练武

硬质合金 doi:10.3969/j.issn.1003-7292.2013.10.003

V8C7有序-无序相变是一类重要的相变.本文通过利用x射线衍射和差热分析研究其相变过程,并计算V8C7、VC0.875衍射消光规律.研究结果表明:V8C7在1200~ 1300℃之间发生有序-无序相变,相变的温度点为1242℃,(110)、(111)、(210)、(211)、(320)、(421)、(432)晶面产生的衍射超结构线消失.通过对δ-VC1-x和V8C7结构振幅的计算,得到δ-VC1-x衍射消光规律:当h、k、l全为奇数时衍射强度减弱;当h、k、l全为偶数时衍射强度加强;h、k、l为两偶一奇或两奇一偶时完全消光.V8C7衍射消光规律:由于空位有序分布,产生超结构线的晶面为(110)、(111)、(210)、(211)、(320)、(421)、(432).

关键词: 有序-无序相变 , 超结构 , V8C7 , δ-VC1-x , 衍射

ZnO/n-Si异质结的I-VC-V特性研究

熊超 , 肖进 , 丁丽华 , 陈磊 , 袁洪春 , 徐安成 , 周详才 , 朱锡芳 , 潘雪涛

功能材料与器件学报

本文通过磁控溅射Al掺杂的ZnO陶瓷靶,在n-Si片上沉积n型电导的ZnO薄膜而制备的ZnO/n-Si异质结,并通过测试其光照下的I-VC-V特性对其光电特性以及载流子输运特性与导电机理进行了研究.研究表明ZnO/n-Si异质结存在良好的整流特性与光电响应,可以广泛应用在光电探测和太阳能电池等领域.由于在ZnO/n-Si异质结界面处的导带补偿与价带补偿相差太大的缘故,在正向电压超过0.8V时,导电机理为空间电荷限制电流导电.同时研究表明ZnO/n-Si异质结界面存在大量界面态,可以通过减小界面态可以进一步提高其光电特性.

关键词: ZnO/n-Si异质结 , I-V特性 , C-V特性 , 内建电势 , 界面态

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