L(?) Jian WANG Yinjun Institute of Physics
,
Academia Sinica
,
Beijing
,
ChinaMA Ruzhang University of Science and Technology Beijing
,
Beijing
,
China LU Jian Dept.No.2
,
Institute of Metallurgy
,
Shoudu Iron and Steel Company
,
Beijing 100085
,
China
金属学报(英文版)
The perpendicular anisotopy,coercivity and Kerr rotation angle of the amorphous Tb_(32)Fe_(54)Co_(14) films were studied.The X-ray,electron diffraction,XPS and AES profile con- firmed that no obvious change in their amorphous structure and oxygen concentration is ob- served after annealing at 100℃,while their properties alter evidently under bending stress.It seems to be believed that the perpendicular anisotropy in the Tb_(32)Fe_(54)Co_(14) films mainly arises from the induced stress during preparation and the magnetostriction coupling stress,as well as,the thermal instability of the film relates closely to the stress relaxation during annealing.
关键词:
amorphous TbFeCo film
,
null
,
null
Journal of Applied Physics
The effect of 3d transition elements (such as V, Cr, Mn, Fe, Co, and Ni additions) on material properties in L1(0) TiAl has been studied using the first-principles DMol and discrete variational method within the framework of the density-functional theory. The transfer energy calculation indicates that all these 3d elements show a tendency to substitute for Al sites in the stoichiometric TiAl alloy, with the increasing order V < Cr < Mn < Ni < Fe < Co. Our results show that the local distortion of crystal lattice around an impurity atom is nonuniform, and it is found that the important influencing factors on the local lattice distortion are the impurity atom size and the site preference. Based on the effects of the doped alloying elements on the structural parameters and mechanical properties, we conclude that the larger bond strength and the smaller axial ratio benefit the ductility. (c) 2007 American Institute of Physics.
关键词:
alloying elements;site preference;electronic-structure;mn;substitutions;base alloys;compound;nb;deformation;occupancies;aluminides
Douxing LI and Hengqiang YE (Laboratory of Atomic imaging of Solids
,
Institute of Metal Research
,
Chinese Academy of Sciences
,
Shenyang
,
110015
,
China)
材料科学技术（英文）
The present paper summarizes the current status of high resolution electron microscopy (HREM)and the applications of HREM to materials science and condensed matter physics. This review recounts the latest development of high resolution electron microscope, progress of HREM and the applications of HREM, including the crystal structure determination of microcrystalline materials and characterization of the local structure of the defects and nanostructured materials as well as qualitative and quantitative analysis of the grain boundaries, interfaces and interfacial reactions in the advanced materials by means of HREM in combination with electron diffraction,subnanometer level analysis, image simulation and image processing.
关键词:
