张鸿冰
,
倪乐民
,
徐祖耀
金属学报
经 LFG(ΔG~(γ→a))-Mogutnov(ΔG_(Fe)~(γ→a))、徐祖耀(Shu-A)(ΔG~(γ→a))-Orr-Chipman(ΔG_(Fe)~(γ→a))、徐祖耀(Shu-B)(ΔG~(γ→a))-Orr-Chipman(ΔG_(Fe)~(γ→a))组合,均可算得 Fe-Mn-C 合金的 Ms 温度且与实验值十分符合.所得结果经数学处理,得 Fe-Mn-C 系 Ms 与成分的关系为:Ms(K)=817.4-7513.4xc-4141.9x_(Mn)-32083.5x_Cx_(Mn)(LFG)Ms(K)=829.9-7580.5x_C-4166.0x_(Mn)-15727.8x_Cx_(Mn)(SHU-A)Ms(K)=829.2-7276.1x_C-2915.4x_(Mn)-43825.7x_Cx_(Mn)(SHU-B)其线性相关系数均大于0.992.C 和 Mn 浓度均使合金的 Ms 线性地降低,而碳的作用几乎是Mn 的两倍.处理中引入了合金元素交互作用项(x_Cx_(Mn)),表明 C,Mn 相互加剧对 Ms 的影响。随含 C,Mn 量的增加,相变驱动力均单调地增加,而不存在奇异点.Ms 和相变驱动力的计算值均依赖于ΔG_(Fe)~(γ→a)项.
关键词:
Journal of Applied Physics
Based on the developed multiple-scattering theory [C.-W. Nan and F. S. Jin, Phys. Rev. B 48, 8578 (1993)], an effective-medium theory (EMT) is proposed to treat coupled electromechanical behavior in composite media. The explicit relations for determining effective behavior of piezoelectric composites are derived. To illustrate the technique, numerical results of piezoelectric ceramic/epoxy composites for various particle shapes are presented over the whole range of concentrations. The EMT estimates are shown to be in good agreement with available experimental results. Porous piezoelectric ceramics are also discussed. The EMT predicts a similar critical behavior for heterogeneous piezoelectric materials to recent experiments.
关键词:
electromechanical properties;ceramics
金属学报
Volu扣ne 27SeriesB1991AUTHOR INDEX CCAO Guanghan(曹光旱)············……6一B科6CAo weijie(曹卫恋)..················……5一B32oCAO Yilin(曹益林)··················……6一B443CHANG Xin(常听)···············……1一B48CHE Guang邻n(车广灿)·············一6一B科0CHEN Erbao(陈二保)···············……6一B410CHEN Jia....
关键词:
Journal of Materials Processing Technology
The crystallization temperatures and other thermal properties have been measured systematically for two ternary Cu-Ni-P and two quaternary Cu-Ni-Sn-P amorphous systems. The dependence of crystallization temperature on the composition for the four alloy systems can not be described basically by the usual used Naka rule. The Gibbs free energy of crystallization can be calculated for the alloy systems with the model proposed by Shu et al. Using the calculated free energy of crystallization, it is still not possible to properly describe all of the crystallization temperatures of the alloy systems. However, it has been found that the correlation between the crystallization temperature and the content of the alloy systems can be reasonably explained by the nucleation and growth rates of a new phase for the classical theory of phase transformation. It has been established that the classical theory of phase transformation can be used to describe the thermal stability of the Cu-based amorphous alloys during their crystallization process. (C) 1999 Published by Elsevier Science S.A. All rights reserved.
关键词:
thermal stability;amorphous alloys;Cu-P based alloy systems;classical;theory of phase transformation;solid-liquid interface;structural model;glasses
盖红星
,
李建军
,
韩军
,
邢艳辉
,
邓军
,
俞波
,
沈光地
,
陈建新
量子电子学报
doi:10.3969/j.issn.1007-5461.2005.01.016
采用Shu Lien Chuang方法计算了AlInGaAs/AlGaAs应变引起价带中重、轻空穴能量变化曲线,在Harrison模型的基础上详细地计算了AlInGaAs/AlGaAs和GaAs/AlGaAs量子阱电子、空穴子能级分布并且进一步研究了这两种材料在不同注入条件下的线性光增益.进一步计算比较可以得出AlInGaAs/AlGaAs应变量子阱光增益特性要优于GaAs/AlGaAs非应变量子阱增益特性,因此AlInGaAs/AlGaAs应变量子阱半导体材料应用于半导体激光器比传统GaAs/AlGaAs材料更具优势.
关键词:
光电子学
,
应变量子阱
,
光增益
,
AlInGaAs
,
半导体激光器
Materials Research Bulletin
Through analysis of the latest experimental results reported in the literature and obtained in our laboratory, we have extended our previous quantum confinement/luminescence center model for the photoluminescence mechanism of porous Si and of nanometer-silicon-particle-embedded Si oxide films (G.G. Qin and Y.Q. Jia, Solid State Commun. 86, 559 (1993)). We consider that there are three main types of competitive photoexcitation/photoemission processes and that the process in which photoexcitation occurs in the nanometer silicon particles (NSPs) while photoemission occurs in the luminescence centers (LCs) in the SiOx layers very close to the NSPs is usually the major one. We discuss under what conditions the other two types of processes will dominate. We believe that the extended quantum confinement/luminescence center model is a physical model that is suitable for the photoluminescence from silicon oxide films embedded with NSPs or nanometer Ge particles (NGPs), as well as from oxidized porous Si. (C) 1999 Elsevier Science Ltd.
关键词:
oxides;luminescence;defects;blue-light emission;visible luminescence;optical-properties;nanocrystals;mechanism;dependence;sio2-films;absorption;spectra;defects
Acta Materialia
In a first report [Jin ZH.. Gumbsch P, Ma E, Albe K, Lu K, Hahn H, et al. Scripta Mater 2006;54:1163], interactions between screw dislocation and coherent twin boundary (CTB) were studied via molecular dynamics simulations for three face-centered cubic (fcc) metals, Cu, Ni and Al. To complement those preliminary results, purely stress-driven interactions between 60 degrees non-screw lattice dislocation and CTB are considered in this paper. Depending on the material and the applied strain, slip has been observed to interact with the boundary in different ways. If a 60 degrees dislocation is forced by an external stress into a CTB, it dissociates into different partial dislocations gliding into the twin as well as along the twin boundary. A sessile dislocation lock may be generated at the CTB if the transited slip is incomplete. The details of the interaction are controlled by the material-dependent energy barriers for the formation of Shockley partial dislocations from the site where the lattice dislocation impinges upon the boundary. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
关键词:
dislocation;slip;twinning;twin grain boundary;molecular dynamics;molecular-dynamics simulation;grain-boundaries;nanocrystalline;materials;cross-slip;rate sensitivity;deformation;copper;strength;aluminum;fcc
曹春海
,
杨名
,
张世远
,
杨森祖
,
崔旭高
,
尤立星
,
吉争鸣
,
康琳
,
许伟伟
低温物理学报
doi:10.3969/j.issn.1000-3258.2003.03.002
采用Nd0.7Sr0.3MnO3/SrTiO3/YBa2Cu3O7-δ的异质结构,研究了自旋极化准粒子的注入效应.在56μm宽的YBCO膜条上成功地制备了与超导膜条同样宽度但不同长度的六个注入结区,长度L分别为80μm, 40μm, 20μm, 10μm, 5μm和2μm.80nm厚的YBCO薄膜在16K温度下Jc为2×105A/cm2.Iin=0.5mA的自旋电流注入下,随L从80μm逐渐顺次减小时,注入效率η=ΔJc/ΔJin逐渐增大.而当L≤20μm后,η不再增加,达到几乎相同的值(～6).初步分析认为这与自旋极化准粒子在超导膜内的有效自旋扩散长度有关.异质结构中YBCO薄膜的超导电性以及注入窗口的尺寸对获得大的自旋注入效率十分重要.
关键词:
注入效率
,
自旋准粒子
,
巨磁阻
,
异质材料
