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Investigation of Instability of Lattice of Bi_2Sr_2CaCu_2O_x

Han ZHANG and Qingrong FENG (Dept. of Physics , Peking University , Beijing 100871 , China)Y.Zhao(School of Materials Science and Engineering , University of New South Wales , Sydney 2052 , NSW , Australia)F.Ritter and W.Assmus (Physikalisches Institut , J.W.Goet

材料科学技术(英文)

Bi2Sr2CaCu2Ox superconductor was studied by differential scanning calorimetry (DSC) and thermogravimetry (TG) in different atmospheres. It is discovered that there is a thermal anomaly in the DSC curve, associated with a weight loss in the TG curve before the melting of the sample. Careful thermal analysis and high temperature X-ray diffraction reveal that the thermal anomaly and the weight loss show an instability of the crystalline Iattice. By annealing the sample in oxygen and argon, respectively and then by TC measurement and thermal analysis, the coincidence of transition temperature with the instability is found. The coincidence is further confirmed by Y-doped 2212 phase.

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DEPT135测定Resol的组成及微细结构参数

杨金瑞 , 余尚先 , 顾江楠

高分子材料科学与工程

通过对resol(羟甲基酚化合物和低分子量羟甲基酚树脂)DEPT135图谱的分析讨论,得到一系列计算resol微细结构参数的经验公式.根据DEPT135图谱可判断是否发生缩聚反应,根据经验公式可计算酚单体各个活性点参与反应百分率或酚羟基导入率、不同类型缩聚所占百分率及低分子量羟甲基酚树脂的平均核体数.

关键词: 羟甲基酚化合物 , 羟甲基酚树脂 , DEPT135 , 结构参数

HAN液晶盒中开关时间对形变场弛豫过程的影响

李晓吉 , 郑桂丽 , 张志东

液晶与显示 doi:10.3788/YJYXS20132801.0025

HAN液晶盒撤掉外加电压的过程(即弛豫过程)中,假定电压的开关时间为有限的,把电压处理为时间的指数衰减函数.在这一假定下,对撤掉外加电压后HAN液晶盒中指向矢的分布情况进行研究,得到了对HAN液晶盒的弛豫过程有影响的电压开关时间的范围.

关键词: HAN液晶盒 , 有限开关时间 , 驰豫过程 , 动力学理论

电场诱导纳米结构HAN液晶盒中新型有序重构过程的描述

陈思博 , 王永超 , 周璇 , 张志东

液晶与显示 doi:10.3788/YJYXS20163109.0853

基于 Landau-de Gennes 理论,利用松弛迭代的方法,研究了包含-1/2向错线的混合排列(HAN)液晶盒中,平行于向错线的电场所诱导的结构转变。结果表明,盒厚固定时,电场诱导五种结构转变过程;电场固定时,盒厚变化产生三类结构转变方式。力曲线上的极小值确定了液晶系统发生结构转变的临界盒厚。

关键词: 有序重构 , Landau-de Gennes理论 , -1/2 向错 , 力曲线

CURRENT STATUS OF HIGH-RESOLUTION ELECTRON-MICROSCOPY AND ITS APPLICATIONS TO MATERIALS SCIENCE AND CONDENSED MATTER PHYSICS

材料科学技术(英文)

The present paper summarizes the current status of high resolution elect;on microscopy ( HREM) and the applications of HREM to materials science and condensed matter physics. This review recounts the latest development of high resolution electron microscope, progress of HREM and the applications of HREM, including the crystal structure determination of microcrystalline materials and characterization of the local structure of the defects and nanostructured materials as well as qualitative and quantitative analysis of the grain boundaries, interfaces and interfacial reactions in the advanced materials by means of HREM in combination with electron diffraction, subnanometer level analysis, image simulation and image processing.

关键词: juxtaposed pentagonal antiprisms;two-dimensional quasicrystal;domain;boundary structures;close-packed phases;nanocrystalline materials;crystal-structure;copper oxidation;initial-stage;translational;symmetry;rotational symmetry

Current Status of High Resolution Electron Microscopy and Its Applications to Materials Science and Condensed Matter Physics

Douxing LI and Hengqiang YE (Laboratory of Atomic imaging of Solids , Institute of Metal Research , Chinese Academy of Sciences , Shenyang , 110015 , China)

材料科学技术(英文)

The present paper summarizes the current status of high resolution electron microscopy (HREM)and the applications of HREM to materials science and condensed matter physics. This review recounts the latest development of high resolution electron microscope, progress of HREM and the applications of HREM, including the crystal structure determination of microcrystalline materials and characterization of the local structure of the defects and nanostructured materials as well as qualitative and quantitative analysis of the grain boundaries, interfaces and interfacial reactions in the advanced materials by means of HREM in combination with electron diffraction,subnanometer level analysis, image simulation and image processing.

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