欢迎登录材料期刊网

材料期刊网

高级检索

  • 论文(2)
  • 图书()
  • 专利()
  • 新闻()

Effect of a Magnetic Field on the Preparation of Silver Nanowires Using Solid Electrolyte Thin Films

Haifei YAO , Jialin SUN , Wei LIU , Hongsan SUN

材料科学技术(英文)

The effect of an external magnetic field on the preparation of silver nanowires was studied. The silver nanowires were synthesized using solid electrolyte RbAg4I5 thin films by applying both a direct current (DC) electric field and a magnetic field. The RbAg4I5 thin films, which were prepared by deposition at room temperature and atmospheric pressure on a NaCl substrate, were used for the transfer of Ag+ ions between two Ag electrodes during the preparation process. When only the DC electric field is applied, the silver ions migrate toward the cathode. On the edge of the silver film at the cathode the Ag+ ions congregate to form aligned nanowires. If the magnetic field is also applied perpendicular to the DC electric field, the morphology of the nanowires can be controlled by rotating the sample in the magnetic field. Experimental results show that the growth of the silver nanowires is determined by the Ag+ ionic flux.

关键词: Silver nanowires , 固体电解质 , 磁场

Pulsed laser deposition of aluminate YAlO3 and LaAlO3 thin films for alternative gate dielectric applications

Applied Physics a-Materials Science & Processing

Amorphous aluminate YAlO3 (YAO) thin films on n-type silicon wafers as gate dielectric layers of metal - oxide semiconductor devices are prepared by pulsed laser deposition. As a comparison, amorphous aluminate LaAlO3 (LAO) thin films are also prepared. The structural and electrical characterization shows that the as-prepared YAO films remain amorphous until 900 degrees C and the dielectric constant is similar to 14. The measured leakage current of less than 10(-3) A/cm(2) at a bias of V-G = 1.0 V for similar to 40-nm-thick YAO and LAO films obeys the Fowler Nordheim tunneling mechanism. It is revealed that the electrical property can be significantly affected by the oxygen pressure during deposition and post rapid thermal annealing, which may change the fixed negative charge density at the gate interface.

关键词: hafnium oxide;si;stability;silicon;transition;dioxide;devices;hfo2

出版年份

刊物分类

相关作者

相关热词