Applied Physics a-Materials Science & Processing
Amorphous aluminate YAlO3 (YAO) thin films on n-type silicon wafers as gate dielectric layers of metal - oxide semiconductor devices are prepared by pulsed laser deposition. As a comparison, amorphous aluminate LaAlO3 (LAO) thin films are also prepared. The structural and electrical characterization shows that the as-prepared YAO films remain amorphous until 900 degrees C and the dielectric constant is similar to 14. The measured leakage current of less than 10(-3) A/cm(2) at a bias of V-G = 1.0 V for similar to 40-nm-thick YAO and LAO films obeys the Fowler Nordheim tunneling mechanism. It is revealed that the electrical property can be significantly affected by the oxygen pressure during deposition and post rapid thermal annealing, which may change the fixed negative charge density at the gate interface.
关键词:
hafnium oxide;si;stability;silicon;transition;dioxide;devices;hfo2
金属学报
Volu扣ne 27SeriesB1991AUTHOR INDEX CCAO Guanghan(曹光旱)············……6一B科6CAo weijie(曹卫恋)..················……5一B32oCAO Yilin(曹益林)··················……6一B443CHANG Xin(常听)···············……1一B48CHE Guang邻n(车广灿)·············一6一B科0CHEN Erbao(陈二保)···············……6一B410CHEN Jia....
关键词:
李凤娟
,
吕国光
金属世界
doi:10.3969/j.issn.1000-6826.2014.04.14
通过对烧结配料所需原料及对冷烧结矿成品检验采制样方法的分析，找出影响检验结果真实性的因素，采取有效的改进措施，使本钢原料厂一次配料、本钢炼铁厂265 m2烧结二次配料及265 m2烧结系统各项稳定率有了很大的提高，烧结矿实物质量和各项技术质量指标有了很大的进步，保证了高炉的稳定顺行。
提高本钢265 m2冷烧结矿及原料检验代表性的实践
Practice of Improving the 265 m2 Cold Sinter and Raw Material Inspection Representative
供稿|
李凤娟,吕国光/
LI Feng-juan, LV Guo-guang
DOI：10.3969/j.issn.1000-6826.2014.04.14
导读内容
本钢炼铁厂265 m2烧结机生产所需要的含铁原料比较复杂，一次配料料种较多，且烧结含铁原料是由本钢原料厂二车间供料，原料质量的不稳定，会影响烧结矿质量的提高和新一号高炉的强化及高炉技术指标的改善。本钢质量管理中心驻冷烧检查站加强了对烧结配料所需原料及对冷烧结矿成品检验采制样代表性的研究，采取了一些改进措施，达到了良好的效果。含铁料成分稳定率、烧结矿各项质量和技术指标在稳步地提高。下面，对本钢质量管理中心驻冷烧检查站就提高采样及检验过程的准确性所采取的措施和办法进行说明。
烧结矿采样是半自动采样，每两小时采样一次，作为一个批次，来代表整个2h烧结矿的成份。
关键词:
