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Treatment of Reused Comprehensive Wastewater in Iron and Steel Industry With Electrosorption Technology

ZHANG Yunhua , GAN Fuxing , LI Meng , WANG Dihua , HUANG Zhongmai , GAO Yunpeng

钢铁研究学报(英文版)

Electrosorption technology was used to treat the reused comprehensive wastewater from iron and steel industry. A problem of relatively high conductivity of wastewater which greatly affects the reuse was examined, and industrial test was conducted for the reused water advanced deionization and purification in a comprehensive wastewater treatment plant of WISCO [Wuhan Iron and Steel (Group) Corporation]. The results of the onsite industrial test showed a satisfactory treatment performance for the reused water even at a flow rate of 1000 L/h in a standard 500 L/h unit. The average conductivity decreased by about 70%, from 580-780 μS/cm to 100-350 μS/cm. The average removal efficiency of Cl- and Ca2+ was about 75% and 68%, respectively, and CODCr of the treated water was also reduced in some degree while the pH value was almost unchanged. The energy consumption was as low as 06 kWh/t, which was remarkably superior to the conventional technologies. Therefore, it is entirely feasible that the novel electrosorption technology can be used in enhanced desalination and purification treatment of reused comprehensive wastewater in iron and steel industry.

关键词: electrosorption , desalination , purification , conductivity , industrial reused water

FU105大功率广播发射管用碳化镧钼阴极研究

万小峰 , 张久兴 , 周文元 , 李湘波 , 周美玲

稀有金属材料与工程

研究了FU105大功率广播发射管用碳化镧钼阴极,参照碳化钍钨阴极FU105管的制备工艺,实现了镧钼阴极的碳化以及镧钼阴极FU105管的排气和老炼.通过镧钼阴极FU105管的性能测试,对碳化镧钼阴极的发射能力和稳定性进行了分析.结果认为:FU105管碳化镧钼阴极的发射能力可以达到碳化钍钨阴极的水平,但其稳定性还有待改进.

关键词: 镧钼阴极 , FU105发射管 , 碳化 , 稀土

[Pt(en)(5-Fu)2]Cl2配合物的合成及抗肿瘤活性

钟文远 , 崔永春 , 范春兰 , 胡智兴 , 李玛琳

贵金属 doi:10.3969/j.issn.1004-0676.2004.02.005

为寻求高效低毒的新型顺铂类抗肿瘤药物,用K2PtCl4、乙二胺(en)、氟尿嘧啶(5-Fu)为原料,设计合成了顺铂类似物[pt(en)(5-Fu)2]C12配合物,由元素分析、红外光谱和质谱分析初步证实了其化学结构,用改良MTT、SRB法,选用K562、A549、Bel-7402、BIU-87、Bcap-37细胞株对其进行体外抗肿瘤活性测定.结果表明,所合成的配合物除在浓度为0.01、0.1 μg/mL时对K562细胞株抗肿瘤活性大于顺铂和氟尿嘧啶外,其它情况下的抗肿瘤活性均小于顺铂和氟尿嘧啶.该配合物仍有进一步研究的价值.

关键词: 药学 , 铂(Ⅱ)配合物 , 合成 , 抗肿瘤活性

GaN 纳米结构的制备

马洪磊 , 杨莺歌 , 薛成山 , 马瑾 , 肖洪地 , 刘建强

稀有金属 doi:10.3969/j.issn.0258-7076.2004.03.001

提出一种通过对溅射Ga2O3薄膜后氮化技术制备GaN纳米结构的方法,已成功地制备出 GaN 纳米线、纳米棒和纳米带.该方法既不需要催化剂,也不需要模板限制,不仅避免了杂质污染,而且简化了纳米结构的制造工艺,对于纳米结构的应用非常有利.利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和选区电子衍射(SAD)研究了 GaN 纳米结构的形貌和晶格结构.结果表明 GaN 纳米结构是具有六角纤锌矿结构的 GaN 晶体,不存在 Ga2O3 或 Ga 的其他相.研究结果证明在高温氮化过程中由于晶格缺陷的降低和晶化的改进能够得到高质量的 GaN 晶体.简要地讨论了GaN 纳米结构的生长机制.

关键词: GaN , 纳米结构 , 制备 , 后氮化技术

GaN基器件中的欧姆接触

邵庆辉 , 叶志镇 , 黄靖云

材料导报

GaN材料以其优良的光电性质,已成为制造发光器件和高温大功率器件的最有前途的材料.欧姆接触是制备GaN基器件的关键技术之一.着重论述了在n-GaN和p-GaN上制备欧姆接触的研究现状.

关键词: 氮化镓 , 欧姆接触 , 接触电阻率

Structure and Debye temperature of wurtzite GaN

Modern Physics Letters B

High Pure Wurtzite structure GaN has been synthesized by gas reaction method. Its structure was determined by powder X-ray diffraction using the Rietveld technique. The positions in the unit cell for Ga and N were refined to be (0, 0, 0) and (0, 0, 0.3814). The Debye temperature was determined as 586 K from the refined temperature factor by using the Debye approximation.

关键词: light-emitting-diodes;high-pressure phase;gallium nitride;transition;growth;blue

非极性GaN薄膜及其衬底材料

周健华 , 周圣明 , 邹军 , 黄涛华 , 徐军 , 谢自力 , 韩平 , 张荣

人工晶体学报 doi:10.3969/j.issn.1000-985X.2006.04.022

本文分析了在不同衬底上生长无极性GaN薄膜的情况,这些衬底主要包括γ-LiAlO2、r面蓝宝石等.通常在蓝宝石上制备的GaN外延膜是沿c轴生长的,而c轴是GaN的极性轴,导致GaN基器件有源层量子阱中出现很强的内建电场,发光效率会因此降低,发展非极性面外延,有望克服这一物理现象,使发光效率提高.

关键词: r面蓝宝石 , γ-LiAlO2 , a面GaN , m面GaN

GaN薄膜的研究进展

马洪磊 , 杨莺歌 , 刘晓梅 , 刘建强 , 马瑾

功能材料

由于GaN薄膜有希望应用在紫外或蓝光发光器件、探测器以及高速场效应晶体管、高温电子器件,GaN材料是当前研究的一个焦点.本文简要介绍了GaN薄膜的制备、衬底选择、掺杂、缓冲层、发光机制和表征等方面的最新进展,指出GaN材料进一步发展需要解决的关键技术问题.

关键词: GaN薄膜 , 研究进展 , 发光机制

低温GaN插入层对AlGaN/GaN二维电子气特性的改善

张东国 , 李忠辉 , 彭大青 , 董逊 , 李亮 , 倪金玉

人工晶体学报

利用低压MOCVD技术在蓝宝石衬底上生长了AlGaN/GaN二维电子气(2DEG)材料,在GaN生长中插入一层低温GaN,并研究了低温GaN插入层对二维电子气输运特性的影响.使用原子力显微镜(AFM)和非接触霍尔测试仪测量了材料的表面形貌和电学特性,发现低温GaN插入层可以改善材料表面平整度并使AlGaN/GaN 2DEG的电子迁移率有明显提高,GaN插入层温度为860℃的样品在室温下2DEG的电子迁移率达到2110 cm2/V·s.

关键词: MOCVD , 缓冲层 , AlGaN/GaN , 二维电子气

Effects of Mg Doping on Photoconductivity of GaN Films

Deheng ZHANG , Qingpu WANG , Yunyan LIU

材料科学技术(英文)

This paper presents the UV photoconductivity properties of GaN films doped with different Mg concentrations deposited by MOCVD. It was observed that for the undoped and weakly doped GaN films the UV photocurrent response was relatively large and the relax time was relatively short. With an increase in doped Mg content, the samples became p-type, the photocurrent response became weak and the relax time became longer.

关键词: GaN , null , null , null

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