DAI Shuhua
,
SHEN Fengman
,
YU Aibing
钢铁研究学报(英文版)
The granule size distribution and the porosity of the granule packing process were researched. For realizing the optimizing control of the whole sintering production process, researchers must know the factors influencing the granule size distribution and the porosity. Therefore, tests were carried out in the laboratory with regard to the influences of the size and size distribution of raw materials and the total moisture content on the size and size distribution of granule. Moreover, tests for finding out the influences of the moisture content and the granule volume fraction on the porosity were also carried out. The results show that (1) the raw material has little influence on granulation when its size is in the range of 051 mm to 10 mm; (2) the influence of the material size on granule size plays a dominant role, and in contrast, the moisture content creates a minor effect on granule size; (3) in binary packing system, with the increase in the constituent volume fraction, the porosity initially increases and then decreases, and there is a minimum value on the porosity curve of the binary mixture system; (4) the minimum value of the porosity in binary packing system occurs at different locations for different moisture contents, and this value shifts from right to left on the porosity curve with increasing the moisture content; (5) the addition of small granules to the same size component cannot create a significant influence on the porosity, whereas the addition of large granules to the same system can greatly change the porosity.
关键词:
granule;raw material;size distribution;granulation;granule packing;porosity
张鸿冰
,
倪乐民
,
徐祖耀
金属学报
经 LFG(ΔG~(γ→a))-Mogutnov(ΔG_(Fe)~(γ→a))、徐祖耀(Shu-A)(ΔG~(γ→a))-Orr-Chipman(ΔG_(Fe)~(γ→a))、徐祖耀(Shu-B)(ΔG~(γ→a))-Orr-Chipman(ΔG_(Fe)~(γ→a))组合,均可算得 Fe-Mn-C 合金的 Ms 温度且与实验值十分符合.所得结果经数学处理,得 Fe-Mn-C 系 Ms 与成分的关系为:Ms(K)=817.4-7513.4xc-4141.9x_(Mn)-32083.5x_Cx_(Mn)(LFG)Ms(K)=829.9-7580.5x_C-4166.0x_(Mn)-15727.8x_Cx_(Mn)(SHU-A)Ms(K)=829.2-7276.1x_C-2915.4x_(Mn)-43825.7x_Cx_(Mn)(SHU-B)其线性相关系数均大于0.992.C 和 Mn 浓度均使合金的 Ms 线性地降低,而碳的作用几乎是Mn 的两倍.处理中引入了合金元素交互作用项(x_Cx_(Mn)),表明 C,Mn 相互加剧对 Ms 的影响。随含 C,Mn 量的增加,相变驱动力均单调地增加,而不存在奇异点.Ms 和相变驱动力的计算值均依赖于ΔG_(Fe)~(γ→a)项.
关键词:
李玉伟
,
陈继红
,
唐东明
,
张豹山
,
鹿牧
,
陆怀先
功能材料与器件学报
doi:10.3969/j.issn.1007-4252.2010.02.011
制备了一系列具有铁磁/反铁磁交换偏置作用的[NiO/Fe65Co35]10多层膜,使用振动样品磁强计(VSM)测量了样品的静磁参数,利用微带线法测量了样品4GHz-10GHz的磁谱,首次制备并测得了自然共振频率(fr)在6GHz以上,最高到f=9.6GHz的薄膜样品.结果表明交换偏置场(Hex)、各向异性场(Hua)、以及矫顽力(Hc)随铁磁层厚度(tFM)增大而减小;基于Landau-Lifishitz (L-L)方程对静磁参量和磁谱进行了比较,发现样品自然共振频率较L-L方程计算值偏大30%以上.
关键词:
铁磁
,
反铁磁
,
交换偏置场
,
各向异性场
,
交换耦合能密度
,
自然共振频率
Journal of Materials Processing Technology
The crystallization temperatures and other thermal properties have been measured systematically for two ternary Cu-Ni-P and two quaternary Cu-Ni-Sn-P amorphous systems. The dependence of crystallization temperature on the composition for the four alloy systems can not be described basically by the usual used Naka rule. The Gibbs free energy of crystallization can be calculated for the alloy systems with the model proposed by Shu et al. Using the calculated free energy of crystallization, it is still not possible to properly describe all of the crystallization temperatures of the alloy systems. However, it has been found that the correlation between the crystallization temperature and the content of the alloy systems can be reasonably explained by the nucleation and growth rates of a new phase for the classical theory of phase transformation. It has been established that the classical theory of phase transformation can be used to describe the thermal stability of the Cu-based amorphous alloys during their crystallization process. (C) 1999 Published by Elsevier Science S.A. All rights reserved.
关键词:
thermal stability;amorphous alloys;Cu-P based alloy systems;classical;theory of phase transformation;solid-liquid interface;structural model;glasses
盖红星
,
李建军
,
韩军
,
邢艳辉
,
邓军
,
俞波
,
沈光地
,
陈建新
量子电子学报
doi:10.3969/j.issn.1007-5461.2005.01.016
采用Shu Lien Chuang方法计算了AlInGaAs/AlGaAs应变引起价带中重、轻空穴能量变化曲线,在Harrison模型的基础上详细地计算了AlInGaAs/AlGaAs和GaAs/AlGaAs量子阱电子、空穴子能级分布并且进一步研究了这两种材料在不同注入条件下的线性光增益.进一步计算比较可以得出AlInGaAs/AlGaAs应变量子阱光增益特性要优于GaAs/AlGaAs非应变量子阱增益特性,因此AlInGaAs/AlGaAs应变量子阱半导体材料应用于半导体激光器比传统GaAs/AlGaAs材料更具优势.
关键词:
光电子学
,
应变量子阱
,
光增益
,
AlInGaAs
,
半导体激光器
