D.Watanabe
金属学报(英文版)
Cost reduction in electric power generation is a major management concern, and it is therefore necessary to reduce maintenance expenses while upholding plant reliability. A maintenance optimization system "FREEDOM", which uses RBM technique, DCF (discounted cash flow) and NPV (net present value) calculation functions, has been newly developed. This system probabilistically evaluates the lifetime of boiler and turbine and quantitatively calculates the risk defined as the cumulative probability of failure multiplied by the consequence of failure. Economically optimized timing of inspection and alternative countermeasure such as repair and replacement are then recommended. This system has already been applied to seven plants in Japan, and its effectiveness has been confirmed.
关键词:
plant asset management
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null
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null
Physical Review B
In the investigation of the optical and magnetic properties of the semiconductors containing transition-metal ions, the one-electron orbital cannot be treated with a pure d orbital because of a strong covalence. This paper presents the energy matrix of the d*(8) and d*(2) (d* means a modified d function) system, in which the covalence is described by two covalent factors. The differences between the matrix diagonal elements of the t(2)(m)e(n) term of the d*(8) system and the t(2)(6-m)e(4-n) term of the d*(2) system vary with m and n. The d(N) electron system can be explained with the d(10-N) hole system because the difference between the energy matrix of the d(N) and d(10-N) systems has a fixed value. However, this kind of simple relation does not exist for the d*(N) and d*(10-N) systems when the covalence is considered. A numerical calculation shows that the variation of the energy levels with the covalence for Ni2+ in the d*(8) electron system is larger than that in the d*(2) hole system. The calculated energy levels obtained from the d*(8) matrix are in good agreement with the experimental data of the Ni2+ ion for ZnS:Ni and ZnSe:Ni. This suggests that the d*(8) electron system instead of the d*(2) hole system should be used in the investigation of optical and magnetic properties of semiconductor containing Ni2+ ions.
关键词:
zns-ni;absorption;vanadium;impurities;spectra;ions
张兴
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郑成武
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李宁
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周兴丹
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李正强
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华瑞茂
液晶与显示
doi:10.3788/YJYXS20122704.0448
介绍了3D显示的基本原理,重点介绍了目前3D显示的主流技术类型,包含了眼镜式3D技术以及裸眼式3D技术,其中眼镜式3D技术包含色差式3D技术、偏光式3D技术和主动快门式3D技术;裸眼式3D技术包含视差屏障式3D技术、柱状透镜式3D技术、指向光源式3D技术和多层显示式3D技术.阐述了各种3D显示技术的基本实现原理和应用领域、并对涉及液晶显示的几种3D技术的优缺点进行了对比.结合液晶材料的特点与3D液晶显示的实际要求,阐述了3D液晶面板对液晶材料快速响应方面的要求,以及液晶透镜对液晶材料光学各向异性参数的要求.
关键词:
3D显示
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眼镜式3D显示
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裸眼式3D显示
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液晶材料
D.Han
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S.R.Qiao
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M.Li
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J.T.Hou
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X.J.Wu
金属学报(英文版)
The differences of tension-tension fatigue and tensile creep characters of 2D-C/SiC and 3D-C/SiC composites have been scrutinized to meet the engineering needs. Experiments of tension-tension fatigue and tensile creep are carried out under vacuum high temperature condition. All of the high temperature fatigue curves are flat; the fatigue curves of the 2D-C/SiC are flatter and even parallel to the horizontal axis. While the tension-tension fatigue limit of the 3D-C/SiC is higher than that of the 2D-C/SiC, the fiber pullout length of the fatigue fracture surface of the 3D-C/SiC is longer than that of the 2D-C/SiC, and fracture morphology of the 3D-C/SiC is rougher, and pullout length of the fiber tows is longer. At the same time the 3D-C/SiC has higher tensile creep resistance. The tensile curve and the tensile creep curve of both materials consist of a series of flat step. These phenomena can be explained by the non-continuity of the damage.
关键词:
2D-C/SiC
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null
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null
杨孟孟
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罗旭东
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谢志鹏
人工晶体学报
本文介绍了陶瓷3D打印技术目前的发展状况、主要的成型技术和重要的应用领域,重点介绍3D打印技术在陶瓷方向的应用。回顾了可适用于直接三维打印和立体光固化法打印的氧化物( Al2 O3、ZrO2)和非氧化物( Si3 N4、SiC)陶瓷浆料的最新研究成果及成型技术对制品性能的影响,并展望了陶瓷3D打印技术未来的发展方向。
关键词:
3D打印
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陶瓷
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浆料
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成型技术
Nanostructured Materials
The Landauer electrical resistivity R of one-dimensional (1D) layered nanostructures is calculated. The analysis of the logarithm of the resistance as a function of grain size reveals that there is a minimum value of resistivity R(min) when the grain size takes a value of d(c), where d(c) depends on the barrier height and excess volume of interface. R increases in the region of d(cl) > d > d(c), where d is the grain size, and d(cl) is another critical value of grain size. The mechanism of the anomalous resistivity behavior is discussed briefly.
关键词:
nanocrystalline;resistance;alloys