D.Q. Li
,
D. Li
,
L.H. Nan and X.T. Tian National Key Laboratory of Advanced Welding Production Technology
,
HIT
,
Harbin 150001
,
China
金属学报(英文版)
In order to effectively control the stress and distortion which produced in welding process, the dynamic change laws of displacement field is the most important factor. The characteristics of the welding dynamic displacement field is high temperature, high strain velocity, thus ordinary methods such as resistance strain gauge or Moiré method can not be used for the measurement of the zone of high temperature. Speckle interference method has the merits of non-contact, resistance to the disturbance of impure lights, high accuracy of measurement (half of wavelength).The paper represents the measurement of dynamic displacement field of argon-arcspot welding, by which it shows that the method of speckle interference is feasible for the measurement of welding dynamic displacement.
关键词:
welding dynamic displacement field
,
null
,
null
D. Li
材料科学技术（英文）
The internal stress induced by a porous layer or passive layer can assist the applied stress to promote dislocation emission and crack propagation, e:g: when the pipeline steel is buried in the soil containing water, resulting in stress corrosion cracking (SCC). Molecular dynamics (MD) simulation is performed to study the process of dislocation emission and crack propagation in a slab of Fe crystal with and without a porous layer on the surface of the crack. The results show that when there is a porous layer on the surface of the crack, the tensile stress induced by the porous layer can superimpose on the external applied stress and then assist the applied stress to initiate crack tip dislocation emission under lowered stress intensity KI, or stress. To respond to
the corrosion accelerated dislocation emission and motion, the crack begins to propagate under lowered stress intensity KI; resulting in SCC.
关键词:
Molecular dynamics simulation
李志宏
,
柳卫平
,
白希祥
,
郭冰
,
连钢
,
颜胜权
,
王宝祥
,
陆昀
,
曾晟
,
苏俊
原子核物理评论
doi:10.3969/j.issn.1007-4627.2005.01.006
利用8Li次级束测量了质心系能量7.8 MeV 2H(8Li, 9Li)1H反应的角分布, 导出了8Li(d, p)9Li反应的天体物理S因子及9Li→8Li+n虚衰变的渐近归一化系数.
关键词:
8Li(d,p)9Li反应
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角分布
,
天体物理S因子
,
渐近归一化系数
Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing
An fc.c. phase designated Y has been studied by means of high resolution electron microscopy (HREM) and transmission electron microscopy in Al-Li-Cu-Mg alloys. HREM observation and electron diffraction patterns show the intergrowth of another Franker-Kasper domain (designated D) with the Y phase. The D domain can grow on both the (001) and the (111) planes of the Y phase. The orientation relationships between the D domain and the Y phase are [110]Y//[100]D, (111BAR)Y//(001)D and [110]Y//[100]D, (001)Y//(010)D.
关键词:
Physics and Chemistry of Liquids
In earlier work, Ma [S.K. MA, Phys. Rev. Lett., 29, 1311 (1972)] has studied the critical exponents and for charged and neutral Bose gases. Here we use the result of Ma, valid for general dimensionality d but only to O(m-1), where m is the number of components of the Bose field, to write a relation between (d) and (d) to O(m-1). This then motivates, but now for the Ising model, a relationship between the critical exponents and , via the dimensionality d. We finally demonstrate a connection between the two renormalisation group eigenvalues yt and yh, via the critical exponent with a dimensional dependence.
关键词:
critical exponents;Ising model;dimensionality
赵国华
,
齐砚勇
,
潘玉峰
硅酸盐通报
对YNLL水泥厂2500 t/d生产线进行热工标定并分析,系统烧成热耗为3889 kJ/kg.cl,高于全国平均水平.高温风机拉风偏大,一级筒出口温度为370℃,偏高.篦式冷却机效果欠佳,AQC抽风量偏高,直接影响了熟料质量和余热发电量,热回收效率偏低.经过改进和优化,熟料产能提高为2600 t/d.该生产线系统还有比较大的潜力,熟料产量还有可能进一步提高,热耗及电耗均可能明显下降.
关键词:
热工标定
,
新型干法水泥
,
篦冷机
曹华夏
,
毕金栋
,
李昌勇
硅酸盐通报
对LNZL水泥厂2500 t/d生产线进行热工标定并分析,该厂熟料产量超过设计产量28.96％,达到3224.1t/d.系统烧成热耗为3302.6kJ/kg熟料,低于全国平均水平,一级筒出口温度为334℃,稍有些偏高;系统的分离效率为91.49％,出预热器飞灰量偏高,还有明显的改善空间.篦式冷却机效果欠佳,直接影响了熟料质量和余热发电量,热回收效率也偏低.该生产线系统还有比较大的潜力,如经过改进和优化,熟料产能还有可能进一步提高,热耗及电耗均可明显下降.
关键词:
热工检测
,
水泥生产线
,
运行情况
Physical Review B
In the investigation of the optical and magnetic properties of the semiconductors containing transition-metal ions, the one-electron orbital cannot be treated with a pure d orbital because of a strong covalence. This paper presents the energy matrix of the d*(8) and d*(2) (d* means a modified d function) system, in which the covalence is described by two covalent factors. The differences between the matrix diagonal elements of the t(2)(m)e(n) term of the d*(8) system and the t(2)(6-m)e(4-n) term of the d*(2) system vary with m and n. The d(N) electron system can be explained with the d(10-N) hole system because the difference between the energy matrix of the d(N) and d(10-N) systems has a fixed value. However, this kind of simple relation does not exist for the d*(N) and d*(10-N) systems when the covalence is considered. A numerical calculation shows that the variation of the energy levels with the covalence for Ni2+ in the d*(8) electron system is larger than that in the d*(2) hole system. The calculated energy levels obtained from the d*(8) matrix are in good agreement with the experimental data of the Ni2+ ion for ZnS:Ni and ZnSe:Ni. This suggests that the d*(8) electron system instead of the d*(2) hole system should be used in the investigation of optical and magnetic properties of semiconductor containing Ni2+ ions.
关键词:
zns-ni;absorption;vanadium;impurities;spectra;ions
