金属学报
Volu扣ne 27SeriesB1991AUTHOR INDEX CCAO Guanghan(曹光旱)············……6一B科6CAo weijie(曹卫恋)..················……5一B32oCAO Yilin(曹益林)··················……6一B443CHANG Xin(常听)···············……1一B48CHE Guang邻n(车广灿)·············一6一B科0CHEN Erbao(陈二保)···············……6一B410CHEN Jia....
关键词:
中国腐蚀与防护学报
N。1Atmospheric Corrosivlty for Steels………………………………………………… .LIANG Caideng HO[I i。-tat(6)Caustic Stress Corrosion Cr。king of Alloy 800 Part 2.The Effect of Thiosul执e……………………………………… KONG De-sheng YANG Wu ZHAO Guo-zheng HUANG De.ltL。ZHANG Yu。。he CHEN She。g-bac(13)SERS slid E16CttOCh6iniC81 Stlldy Of Illhibit1Oli M6ch&tllsth Of ThlollY68 Oil ITOll ID H....
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Materials Research Bulletin
Through analysis of the latest experimental results reported in the literature and obtained in our laboratory, we have extended our previous quantum confinement/luminescence center model for the photoluminescence mechanism of porous Si and of nanometer-silicon-particle-embedded Si oxide films (G.G. Qin and Y.Q. Jia, Solid State Commun. 86, 559 (1993)). We consider that there are three main types of competitive photoexcitation/photoemission processes and that the process in which photoexcitation occurs in the nanometer silicon particles (NSPs) while photoemission occurs in the luminescence centers (LCs) in the SiOx layers very close to the NSPs is usually the major one. We discuss under what conditions the other two types of processes will dominate. We believe that the extended quantum confinement/luminescence center model is a physical model that is suitable for the photoluminescence from silicon oxide films embedded with NSPs or nanometer Ge particles (NGPs), as well as from oxidized porous Si. (C) 1999 Elsevier Science Ltd.
关键词:
oxides;luminescence;defects;blue-light emission;visible luminescence;optical-properties;nanocrystals;mechanism;dependence;sio2-films;absorption;spectra;defects
王浩
,
刘国权
,
秦湘阁
金属学报
采用Potts模型Monte Carlo方法对3种现存的三维个体晶粒长大速率拓扑依赖性
方程进行了仿真验证. 结果表明, Rivier速率方程认为晶粒
体积变化率dVf/dt与晶粒面数f成线性关系, 与仿真
结果明显不符, 不适用于描述三维晶粒长大过程的动力
学. 当晶粒面数f≥8时, Yu-Liu速率方程和
MacPherson-Srolovitz速率方程均与仿真结果很好吻合,
表明这两者均可以用来定量描述三维晶粒长大过程的动力学;当
f<8时, 这两个方程均与仿真结果有显著差异.
关键词:
三维晶粒长大
,
topology-dependent grain growth rate equation
王浩
,
刘国权
,
秦湘阁
金属学报
doi:10.3321/j.issn:0412-1961.2008.01.003
采用Potts模型Monte Carlo方法对3种现存的三维个体晶粒长大速率拓扑依赖性方程进行了仿真验证.结果表明,Rivier速率方程认为晶粒体积变化率dVf/dt与晶粒面数,成线性关系,与仿真结果明显不符,不适用于描述三维晶粒长大过程的动力学.当晶粒面数f≥8时,Yu-Liu速率方程和MacPherson-Srolovitz速率方程均与仿真结果很好吻合,表明这两者均可以用来定量描述三维晶粒长大过程的动力学;当f<8时,这两个方程均与仿真结果有显著差异.
关键词:
三维晶粒长大,拓扑依赖性长大速率方程,Potts模型,Monte Carlo仿真