材料期刊网

CuTiNiZrV Amorphous Alloy Foils for Vacuum Brazing of TiAl Alloy to 40Cr Steel

Honggang Dong , Zhonglin Yang , Zengrui Wang , Dewei Deng , Chuang Dong

材料科学技术（英文）

关键词:

Effect of Post-weld Heat Treatment on Properties of Friction Welded Joint Between TC4 Titanium Alloy and 40Cr Steel Rods

Honggang Dong , Lianzhen Yu , Dewei Deng , Wenlong Zhou , Chuang Dong

材料科学技术（英文）

关键词:

Effects of Sb Content on Solidification Pathways and Grain Size of AZ91 Magnesium Alloy

Dan-Hui Hou , Song-Mao Liang , Rong-Shi Chen , Chuang Dong , En-Hou Han

金属学报(英文版) doi:10.1007/s40195-014-0178-4

关键词:

Ab initio study of the intrinsic exchange bias at the SrRuO(3)/SrMnO(3) interface

Physical Review B

In a recent publication [S. Dong et al., Phys. Rev. Lett. 103, 127201 (2009)], two (related) mechanisms were proposed to understand the intrinsic exchange bias present in oxides heterostructures involving G-type antiferromagnetic perovskites. The first mechanism is driven by the Dzyaloshinskii-Moriya interaction, which is a spin-orbit coupling effect. The second is induced by the ferroelectric polarization, and it is only active in heterostructures involving multiferroics. Using the SrRuO(3)/SrMnO(3) superlattice as a model system, density-functional calculations are here performed to verify the two proposals. This proof-of-principle calculation provides convincing evidence that qualitatively supports both proposals.

关键词: thin-films;weak ferromagnetism;superlattices;anisotropy;bifeo3;srruo3;model

GaxIn1-xAs/GaInAsP应变量子阱结构能带的计算

高少文 , 陈意桥 , 李爱珍

功能材料与器件学报 doi:10.3969/j.issn.1007-4252.2002.03.002

对含有Luttinger-Kohn哈密顿量的有效质量方程,利用S.L.Chuang提出的传递矩阵法,计算了量子阱中不同Ga组分的GaxIn1-xAs/GaInAsP应变量子阱结构的能带,该结构可被选作980nm光通信泵浦激光器的有源层.研究还得到了GaxIn1-xAs/GaInAsP双应变量子阱结构中电子和空穴的能级以及能级的色散关系.

关键词: GaInAs/GaInAsP , 应变量子阱 , 色散

AlInGaAs/AlGaAs应变量子阱增益特性研究

盖红星 , 李建军 , 韩军 , 邢艳辉 , 邓军 , 俞波 , 沈光地 , 陈建新

量子电子学报 doi:10.3969/j.issn.1007-5461.2005.01.016

采用Shu Lien Chuang方法计算了AlInGaAs/AlGaAs应变引起价带中重、轻空穴能量变化曲线,在Harrison模型的基础上详细地计算了AlInGaAs/AlGaAs和GaAs/AlGaAs量子阱电子、空穴子能级分布并且进一步研究了这两种材料在不同注入条件下的线性光增益.进一步计算比较可以得出AlInGaAs/AlGaAs应变量子阱光增益特性要优于GaAs/AlGaAs非应变量子阱增益特性,因此AlInGaAs/AlGaAs应变量子阱半导体材料应用于半导体激光器比传统GaAs/AlGaAs材料更具优势.

关键词: 光电子学 , 应变量子阱 , 光增益 , AlInGaAs , 半导体激光器