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MICROSTRUCTURE AND INDENTATION BEHAVIOUR OF MULTILAYER Ti-N FILM

WAGENDRISTEL A Viena Technical Univessity , AustriaHUANG Rongfang Institute of Metal Research , Academia Sinica , Shenyang , ChinaBANGERT H YANG Xia WU Lihang WANG Haifeng PANGRATZ H SKALICKY P Viena Technical University , Austria Associate Professor , Institute of Metall Research , Academia Sinica , Shenyang 110015 , China

金属学报(英文版)

The microstructure of Ti/TiN multilayer film was studied.It was shown by trans- mission electron microscopy of cross-sectional sample and respective secondary neutrals mass-spectroscopy depth profiling that the film has a periodic alternate multilayered structure:substrate /FeTi/Ti/Ti_2N/TiN/Ti_2N/Ti/Ti_2N/TiN...Ti/Ti_2N/TiN,where FeTi and Ti_2N were the transition layers formed during ion plating.Cross-sectional fracture surface of indentation samples had been obtained and studied with scanning electron microscopy.It was shown that the multilayer film deformed during indentation, formed an indentation pit and a pile-up of materials around the indentation pit.As the applied load increased deformation region extended beyond the film/substratc interface and into the substrate,the interlayer crack in the film and hole formation at the film /substrate interface were initiated.It is also shown that the multilayered Ti/TiN film offered better toughness in comparison with single layer TiN film.

关键词: multilayer Ti-N film , null , null

P-a-SiC:HP-μc-Si:H过程中材料特性的变化

朱锋 , 赵颖 , 张晓丹 , 孙建 , 魏长春 , 任慧智 , 耿新华

人工晶体学报 doi:10.3969/j.issn.1000-985X.2004.02.005

采用RF-PECVD方法,在P-a-SiC:H薄膜沉积技术基础上,通过逐步减小碳、硼的掺杂浓度,增大氢稀释率,使材料从非晶态向微晶态转变,在获得本征微晶材料之后,再逐步增大硼掺杂浓度,得到P型微晶硅薄膜材料(暗电导率为5.22×10-3S/cm,光学带隙大于2.0eV).在这个过程中可以明显观察到碳、硼抑制材料晶化的作用.

关键词: RF-PECVD , P型微晶硅 , P型非晶硅碳

ph热力学面上水和水蒸气热力性质快速计算

王智学 , 王晓东 , 段远源 , 安宾

工程热物理学报

采用双网格双二次样条插值模型,建立了p-h热力学面上水和水蒸气温度和熵的样条函数T^SPL(ph)和s^SPL(ph)。T^SPL(ph)的计算,将ph热力学面划分为五个子区,每个子区采用均匀网格,其中两相区简化为饱和线Tsat(p)的计算,并采用曲面延拓的方法对饱和线附近区域进行处理。s^SPL(p,L)的计算无需分区,为保证全区域计算精度,采用等差和等比两种非均匀网格划分方法。计算表明,T^SPL(p,h)的计算速度是T^IF97(ph)的18.4—23.5倍,计算精度比T^SPL(ph)高3到4个数量级。

关键词: 水和水蒸气 , 热力性质 , 样条插值 , 快速计算

Electrochemical corrosion behavior of electroless Ni-P coating in NaCl and H(2)SO(4) solutions

Materials and Corrosion-Werkstoffe Und Korrosion

Electrochemical corrosion behavior of electroless Ni-P coating in NaCl and H(2)SO(4) solutions were studied by potentiodynamic polarization curves and electrochemical impedance spectra techniques, as well as the corrosion morphology was characterized. The results indicate that electroless Ni-P coating with about 25 mu m is stable in 30 days immersion in NaCl solution. Although it was corroded with prolonged immersion days, the corrosive medium has not penetrated through the coating. During the H(2)SO(4) concentration ranging from 5 to 10%, the corrosion current density of electroless Ni-P coating increased due to the intensified anodic dissolution process; in 15% H(2)SO(4) solution, electroless Ni-P coating shows obvious anodic passivation effect.

关键词:

A Novel near Net-Shape Technique for P/M Parts with Large H/D Ratio

Yong LIU , Baiyun HUANG , Kechao ZHOU , Hongwu OUYANG , Yuehui HE

材料科学技术(英文)

In order to overcome the shortcomings of conventional hot pressing, a novel near net-shape technique, called radial hot pressing, for P/M parts with large height-to-diameter (H/D) ratio was introduced. Effects of processing parameters on the microstructures and density of P/M TiAl base alloy valves were studied. Results show that the radial hot pressing is an effective technique for manufacturing valves with a H/D ratio of about 10:1, and the perfect joint interface between the Mo sheet and the parts is helpful for subsequent HIPing.

关键词: Near net-shape technique , null , null

Li-N-H共掺法制备 p型 ZnO薄膜

卢洋藩 , 叶志镇 , 曾昱嘉 , 陈兰兰 , 朱丽萍 , 赵炳辉

无机材料学报 doi:10.3724/SP.J.1077.2006.01511

采用Li-N-H共掺技术在玻璃衬底上生长p型ZnO薄膜. XRD结果表明共掺ZnO薄膜具有高度cll轴取向, Hall测试表明薄膜的电阻率为25.2Ω·cm, Hall迁移率为0.5cm2/(V·s), 空穴浓度为4.92×1017/cm3. 此外, p-ZnO薄膜在可见光区域具有90%的高透射率.

关键词: p-ZnO , magnetron sputtering , codoping

Li-N-H共掺法制备p型ZnO薄膜

卢洋藩 , 叶志镇 , 曾昱嘉 , 陈兰兰 , 朱丽萍 , 赵炳辉

无机材料学报 doi:10.3321/j.issn:1000-324X.2006.06.039

采用Li-N-H共掺技术在玻璃衬底上生长p型ZnO薄膜.XRD结果表明共掺ZnO薄膜具有高度c轴取向,Hall测试表明薄膜的电阻率为25.2Ω·cm,Hall迁移率为0.5cm2/(V·s),空穴浓度为4.92×1017/cm3.此外,p-ZnO薄膜在可见光区域具有90%的高透射率.

关键词: p-ZnO , 磁控溅射 , 共掺

脉冲电沉积Ni-P/BN(h)复合镀层的组织结构与性能

彭成章 , 杨添 , 朱玲玲

材料保护

目前,鲜见对Ni-P/Bn(h)复合电沉积层的制备及其性能的研究报道.在Q235钢表面脉冲电沉积了Ni-P/BN(h)复合镀层,并于400℃热处理80 min,对热处理镀层的组织结构、显微硬度、耐蚀性能和摩擦学性能进行了分析测试.结果表明:镀态复合镀层为非晶态结构,400℃热处理后发生晶化,显微硬度显著提高,达到907.5 HV2N;在3.5% NaCl和10%H2SO4腐蚀介质中,镀层几乎未发生全面腐蚀;镀层在干摩擦条件下表现出良好的减摩耐磨性能,低载时为轻微磨粒磨损,随载荷增大表现为磨粒磨损和黏着磨损的混合磨损机制.

关键词: Ni-P/BN (h)复合镀层 , 脉冲电沉积 , 显微硬度 , 耐蚀性能 , 摩擦磨损性能

用于4H-SiC雪崩光电探测器p型欧姆接触的研究

朱会丽 , 陈厦平 , 吴正云

量子电子学报 doi:10.3969/j.issn.1007-5461.2007.06.016

对4H-SiC雪崩光电探测器的Ti/Al/Au p型欧姆接触进行了详细的研究.通过线性传输线模型(LTLM)测得经930℃退火后欧姆接触的最小比接触电阻为5.4×10-4Ωcm2.分别用扫描电子显微镜(SEM)、俄歇电子能谱(AES)、X射线光电子能谱(XPS)和X射线衍射谱(XRD)对退火前后的表面形貌、金属之间以及金-半接触界面之间相互反应及扩散情况进行测试与分析,发现了影响欧姆接触性能的主要原因.对采用此欧姆接触制备的4H-SiC雪崩光电探测器进行测试,发现器件的击穿电压约为-55 V,此时其p型电极处的电压降仅为0.82 mV,可以满足4H-SiC雪崩光电探测器在高压下工作的需要.

关键词: 光电子学 , 4H-SiC , p型欧姆接触 , X射线光电子能谱 , 雪崩光电探测器

P204-HCl-H3cit体系萃取分离轻稀土的研究

常宏涛 , 吴文远 , 涂赣峰 , 赵治华 , 李东 , 桑晓云

稀土 doi:10.3969/j.issn.1004-0277.2008.03.005

针对在高酸度下二(2-乙基己基)磷酸(P204)萃取轻稀土氯化物时,La3+、Ce3+、Pr3+、Nd3+之间分离系数较低的问题,以H3cit-HCl-RECl3溶液为水相,1.5mol/LP204-煤油为有机相,进行了单级萃取实验,实验结果表明,P204在萃取高酸度稀土溶液时(pH=1.0)轻稀土分离系数和有机萃取量明显高于无柠檬酸(H3cit)的萃取体系.考察了P204萃取分离柠檬酸轻稀土时料液酸度、柠檬酸浓度、料液浓度对分离系数的影响,并与生产实际中皂化P204-HCl体系Ce/Pr分离生产线的萃取结果进行了对比,其结果说明,由于柠檬酸的加入强化了Ce和Pr的分离过程,所以在柠檬酸体系中Ce/Pr的分离效果优于盐酸体系.

关键词: 萃取 , 分离系数 , P204 , 柠檬酸 , 稀土

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