T.J.Bai 1
,
2) and C.F.Ren 1) 1) Shenyang University
,
Shenyang 110044
,
China 2) Institute of Metal Research
,
The Chinese Academy of Sciences
,
Shenyang 110015
,
China
金属学报(英文版)
To avoid leaking or bursing by crack on surface of preddure vessels made of streels,a method for analyzing the principle of propagation of a surface crack is established,and used on a spherical vessel with program calculation and simulation,the program is written in QBASIC and the reaults are provided and discussed.
关键词:
spherical vessel
,
null
,
null
,
null
马毅斌
,
李宁
,
黎德育
,
张密林
,
黄晓梅
腐蚀学报（英文）
用电化学方法研究了Mg-14Li-1Al-0．1Ce合金在卤素溶液（NaX，X=F，C1，Br和I）中的腐蚀行为并用失重法测定其腐蚀速率，用扫描电镜（SEM）观察腐蚀后的表面形貌，利用XRD检定腐蚀产物的相组成．结果表明，合金在卤素溶液中的腐蚀速率由低到高的顺序是：NaF〈NaI〈NaBr〈NaCl．经过48h腐蚀后，合金在NaCl、NaBr和NaI溶液中的腐蚀产物层的组分为Mg（OH）2，Li3Mg7和Li0.92Mg4.08，而在NaF溶液中的腐蚀产物层的组分为Li3Mg7和Li0．92Mg4．08．此外，合金在NaF溶液中的电化学活性非常低，出现了钝化现象．电化学阻抗谱表明合金腐蚀产物层不能起到防止基体腐蚀的作用．
关键词:
镁锂合金
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腐蚀
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卤化钠
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EIS
,
XRD
Zhiyong Liu
材料科学技术（英文）
Here we report the fabrication and superconductivity of the iron-based arsenic oxide SmO1-xFxFeAs compound. X-ray diffraction (XRD) results prove that the lattice parameters a and c decrease systematically with increasing x in between 0<x≤0.35, but when x>0.35 the a and c increase with the decrease of x in
the SmO1-xFxFeAs. The critical temperature (Tc) increases with increasing x in between 0.15≤x≤0.3, while x>0.3 the Tc decreases with the increase of x. It is found that at x=0.3 SmO0.7F0.3FeAs has the highest onset resistivity transition temperature of 55.5 K. The critical current density (Jc) value at 10 K for the obtained SmO0.7F0.3FeAs is 1.3×105 A/cm2 (0 T). Meanwhile one can estimates Hc2(0) from the slope of the Hc2(T) curve at T=Tc (HC2 is the upper critical field), and for the 90% normal-state resistivity (ρn) criterion (Tc=55 K), Hc2(0) is determined to be ~253 T.
关键词:
SmO1-xFxFeAs compound
陈磊
,
冯振杰
,
曹世勋
,
张金仓
低温物理学报
本文采用第一性原理计算软件包VASP,系统地研究了不同F掺杂比例的新型层状超导体NdFxO1-xBiS2 (x=0,0.125,0.25,0.375,0.5)体系的晶格特性和电子结构,并着重研究了将Nd4f电子作为价电子引入对NdF0.5O0.5BiS2电子结构的影响和NdF0.5O0.5BiS2的磁有序结构.结果表明:引入F掺杂会减小晶格参数a的值,但随着掺杂比例的增加,a值又会逐渐增加,晶格参数c的值则保持递减的趋势;F掺杂比例为0.375时,费米能级处出现态密度峰值,意味着最佳掺杂;Nd4f电子作为价电子时会与Nd5d电子一起成为NdO(F)耗尽层中的载流子供体,不会改变BiS2超导层的电子结构;Nd子晶格局域磁矩的C-AFM型磁有序排列会大大增加体系的稳定性,成为最可能的磁性基态.
关键词:
NdFxO1-xBiS2
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电子结构
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Nd4f电子
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磁有序
罗湘宁
,
王晶
,
陈赓华
,
杨乾声
,
张利华
低温物理学报
doi:10.3969/j.issn.1000-3258.2000.01.003
本文采用偏置电流反转的频率与磁通调制频率相等的方案,研制了带偏置电流反转的dc SQUID测试系统,明显降低了YBCO双晶结dc SQUID的1/f噪声.在3Hz处,磁通噪声由静态偏置时的降低到.1/f噪声的角频率从1kHz下降到3Hz.前放的设计,采用低噪声集成电路,整个磁通锁定环置于测试杆顶端,简化了电路,提高了测试系统的稳定性.在白噪声区,测得最低磁通噪声为 .前放的噪声系数为1.1dB.
关键词:
管炜
,
刘伟
,
连贵君
,
聂瑞娟
,
杨涛
,
熊光成
,
阎守胜
低温物理学报
doi:10.3969/j.issn.1000-3258.2003.01.002
我们分别测量了YBa2Cu3O7-δ (YBCO)和PrBa2Cu3O7-δ(PrBCO)微桥样品在正常态沿ab面方向的1/f噪声,发现这两种材料分别存在着数量级为10 1μm和10 2μm的特征尺度, 在此尺寸以下,噪声水平急剧下降,即噪声的尺寸效应.我认为这一结果反映出样品是由尺寸为10 0μm的独立小区组成,小尺寸样品噪声表现是这些小区涨落叠加的结果.
关键词:
高温超导体
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1/f噪声
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尺寸效应
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计算机模拟
田中青
,
黄伟九
,
张春艳
,
余洪滔
材料导报
微波介质陶瓷是制作各种微波器件的关键材料.具有复合钙钛矿结构Ba(B'1/3 B"2/3)O3(B'=Mg,zn,Ni或Co;B"=Ta和Nb)型的微波介质陶瓷材料由于在很高的微波频率下具有极低的介电损耗而受到人们的重视.在总结前人研究成果并结合自己研究结果的基础上,从材料组成、结构、性能关系探讨了调节这类材料谐振频率温度系数的途径.
关键词:
微波介质陶瓷
,
复合钙钛矿
,
介电损耗
Superconductor Science & Technology
It is shown that the superconductivity in Ce(1-x)Gd(x)FeAsO(0.84)F(0.16) compounds can be modulated by internal (chemical) pressure. The internal pressure is induced by Gd substitution for Ce in CeFeAsO(0.84)F(0.16), which compresses the crystal lattice. The temperature dependences of resistivity and magnetization show that the superconducting-transition temperature T(c) is enhanced from 40 K for CeFeAsO(0.84)F(0.16) to 47.5 K for Ce(0.6)Gd(0.4)FeAsO(0.84)F(0.16). The increase and subsequent decrease of Tc upon application of external pressure, as observed previously in LaFeAsO(0.89)F(0.11), is entirely confirmed by the modulation of Tc of the Ce(1-x)Gd(x)FeAsO(0.84)F(0.16) superconductors by internal pressure.
关键词:
layered quaternary compound;43 k;iron
