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STUDY ON THE THREESTAGE CREEP OF THE DD3SINGLE CRYSTAL SUPERALLOY

Author X.A. Zhang1) , H.Q. Xia1) , Z.T. Wu1) , Y.F. Han1) , R. Shi2) and G.X. Hu2) \= 1) Mechanical Properties Laboratory , Beijing Institute of Aeronautical Materials , Beijing 100095 , China2) The State Education Commission Open Research Laboratory for High Temperature

金属学报(英文版)

Materials and Testing, Shanghai Jiao Tong University, Shanghai 200030, ChinaManuscript received 18 October 1998 The threestage creep behavior of DD3 single crystal superalloy had been studied. The results show that the creeprupture properties of DD3 single crystal satisfy the requirements for high performance turbine blade application. The influence of crystal orientation on the creeprupture property of DD3 single crystal was tested and discussed. An engineering criterion to evaluate the regimes of secondary and tertiary creep is proposed, and this method gives a reasonable result for practical applications. The fractography and TEM micrography of the tested specimens had been studied, and it is determined that the glidecontrolled creep is the basic creep mechanism of DD3 single crystal at intermediate temperature, but the thermally activated processes become dominant at higher temperature.

关键词: threestage creep curve , null , null , null

T型接头蒙皮厚度对Z-pin增强效果的影响

李梦佳 , 陈普会 , 孔斌 , 彭涛 , 姚正兰 , 邱学仕

复合材料学报 doi:10.13801/j.cnki.fhclxb.20150930.002

在关于拉脱载荷下Z-pin增强T型接头的有限元模拟方法基础上,通过对2组蒙皮厚度分别为7.2 mm和4.0 mm的试验件的试验结果进行分析,研究了T型接头蒙皮厚度对 Z-pin增强效果的影响。结果表明:Z-pin增强效果随着蒙皮厚度的减小而增大。蒙皮厚度大于5 mm,Z-pin不能提高结构的最大承载能力,但可显著提高结构首次掉载后的承载性能,使T型接头在较大的加载位移下仍保持较高的承载能力;无论蒙皮厚薄,结构首次掉载后,各Z-pin增强T型接头可达到的载荷平台是相当的,且该载荷平台随蒙皮的变厚有降低的趋势。

关键词: 复合材料 , T型接头 , Z-pin , 蒙皮厚度 , 有限元模拟

Z-pin参数对复合材料T型接头拉脱承载能力的影响

李梦佳 , 陈普会 , 孔斌 , 彭涛 , 姚正兰 , 邱学仕

复合材料学报 doi:10.13801/j.cnki.fhclxb.201502.002

利用二维平面应变模型对Z-pin增强T型接头试样进行失效分析,采用内聚力模型模拟界面的破坏情况,通过在分层的上下界面加入非线性弹簧元模拟Z-pin的增强作用,非线性弹簧元的力学性能(桥联律)由细观力学方法获得,数值结果与试验值吻合较好.在已验证有限元方法的基础上,研究了Z-pin直径、密度及植入角度等对T型接头拉脱承载能力的影响.结果表明:Z-pin增强可显著提高T型接头的拉脱承载能力,与未Z-pin增强的T型接头相比,Z-pin增强明显延缓了掉载;T型接头的拉脱承载能力随Z-pin直径和密度的增加而增大,随植入角度的增大而减小;在所研究的角度范围内,当植入角度为60°时,T型接头的拉脱承载能力最好;Z-pin直径和密度对拉脱承载能力的影响远比植入角度的影响显著.

关键词: 复合材料 , T型接头 , Z-pin , 非线性弹簧 , 桥联律

z-pin增强复合材料T型接头层间性能的建模与分析

李成虎 , 燕瑛

复合材料学报

提出了基于z-pin桥联力试验的z-pin增强复合材料T型接头层间性能的模拟方法.每根z-pin的作用有两部分:增加了分层的张开阻力与剪切阻力.在有限元模拟中通过在相应的节点上加两个方向(竖直方向和水平方向)的非线性弹簧模拟张开阻力和剪切阻力.通过张开型z-pin桥联力试验和剪切型z-pin桥联力试验得到两条力-位移曲线,再把曲线各自赋予到所有竖直非线性弹簧和水平非线性弹簧,从而模拟z-pin对复合材料T型接头层间性能的增强效果.在T型接头拉拔试验模拟分析中,研究了不同跨距和不同z-pin间距对拉拔力的影响.模拟分析表明跨距对拉脱位移影响较大,z-pin间距对最大拉拔力影响较大.

关键词: z-pin , 复合材料 , z-pin桥联力 , 张开型 , 剪切型 , 非线性弹簧

快速凝固Al-Li-Cu-Mg-Zr合金中Z相和T相的结构关系

张立春 , 何安强 , 吴玉琨 , 叶恒强 , 张永昌

金属学报

利用高分辨电镜(HRTEM)和常规电子显微术研究了快速凝固Al-Li-Cu—Mg—Zr合金中Z相和T相的结构关系,发现两相间两种确定的晶体学取向关系,并以此为依据解释了Z相和T相的某些结构缺陷两相的结构有密切关联,其中一相中缺陷的扩展会导致另一相的形成

关键词: Al-Li-Cu-Mg-Zr合金 , Z hexagonal phase , T f.c.c. phase , shear structure

Magnetic properties of 1T-TaS2

Chinese Physics Letters

The magnetic properties of 1 T-TaS2 and 1 T-Fe-0.07 Ta-0.93 S-2 have been studied, Experimental results show that the phase transition temperature of 1 T-TaS2 is a function of the magnetic field, At low temperatures, both compounds are in a mixed state of charge density wave -spin density wave due to the coherent superposition of antiferromagnetic coupling.

关键词: density

小角度直线反走样的改进Wu算法

李铂 , 周建江 , 夏伟杰 , 吴连慧

液晶与显示 doi:10.3788/YJYXS20142904.0605

直线是机载座舱显示画面中最基本的图元,其显示质量对于整个画面的显示效果影响较大,尤其是小角度下直线显示的“麻花”现象一直是影响显示效果的关键问题之一.为了提高小角度下直线的显示效果,本文提出了一种基于Wu算法的亮度渐变改进算法.该算法通过渐进地展现直线从轴方向上的亮度变化过程,减少亮度畸变,有效地改进了显示效果.通过Matlab仿真和FPGA实现,验证了该算法反走样后的小角度直线显示效果明显优于其他算法,而且结合中点画线法后,绘制时间与Wu算法相当.同时该算法还可改善大角度直线和圆弧的显示效果,消除了大角度直线的边缘锯齿,解决了圆弧在小角度部分的虚化问题.因此本文算法可用于对实时性和显示效果要求高的机载座舱显示系统,以缓解飞行员的视觉疲劳.

关键词: 座舱显示 , 反走样 , 改进Wu算法 , 小角度 , FPGA实现

PHASE-TRANSITION AND ELECTRON LOCALIZATION IN 1T-TAS2

Physical Review B

The magnetic properties and phase transitions of 1T-TaS2 and 1T-Fe0.07Ta0.93S2 have been studied in the interval of 1.5-300 K and over the range of 100 Oe-60 kOe. Experimental results show that at high temperatures the compounds are in a diamagnetic state and the commensurate-charge-density-wave-triclinic-nearly-commensurate transition temperature of 1T-TaS2 decreases with increasing magnetic field. The amount of variation is a function of the magnetic field. At low temperatures both 1T-TaS2 and 1T-Fe0.07Ta0.93S2 are in a paramagnetic state owing to the localized moments that come from the single Anderson-Mott localization state. The curves of magnetization versus temperature do not follow the Curie law or Curie-Weiss law, but can be described fairly well as M = M(0) + gamma T--n. The fitting parameters of experimental curves show that a part of the neighboring moment appears as antiferromagnetic coupling due to exchange interaction between the moments. The magnetic-field dependence of magnetization exhibits a complicated feature at low temperature. It shows that the compounds may undergo a phase transition at the maximum value of magnetization and then they are probably in a mixed charge-density-wave-spin-density-wave (CDW-SDW) state or SDW state due to the coherent superposition of the antiferromagnetic coupling.

关键词: metal-insulator-transition;density-wave domains;high magnetic-fields;charge-density;doped 1t-tas2;coexistence;microscopy;systems;silicon;2h-tas2

BST掺杂对M/Z型六角铁氧体复磁导率(1MHz~1GHz)的影响

陈耿 , 谢建良 , 黄鹏

功能材料

采用陶瓷工艺制备C02Z(Ba3(Co0.4Zn0.6)2Fe23.4O41)和BaM(BaFi1.4Co1.4Fe9.2O19)六角铁氧体,二次球磨时掺杂少量BST(BaSrTiO3)铁电材料,对比研究了BST掺杂对Z型和M型铁氧体在1MHz~1GHz频率范围内相对复磁导率(μr=μr1-iμr")的影响.BST的掺杂使Z型铁氧体μr增大,共振频率点移向低频;使M型铁氧体的μr减小,共振频率点移向高频.通过对其微观结构和磁参数的测试分析,讨论了BST掺杂对Z型和M型铁氧体复磁导率不同影响的作用机理.

关键词: Z型六角铁氧体 , M型六角铁氧体 , 磁晶各向异性场 , 相对复磁导率

Thermal shifts and electron-phonon interactions of T-4(2) and T-4(1). broad bands for ruby

Communications in Theoretical Physics

For the first time, by taking into account all the irreducible representations and their components in the electron-phonon interaction (EPI) as well as all the levels and the admixtures of wavefunctions within d(3) electronic configuration, the values of parameters in expressions of Raman and optical-branch terms of thermal shifts (TS) due to EPI for three levels, T-4(2) band and T-4(1) band of ruby have been evaluated; the contributions to TS of T-4(2) and T-4(1) broad bands from thermal expansion have also been. calculated; and then, the TS of the peak energies of 'T2 and 4 Ti broad bands have been calculated. The results are in satisfactory agreement with observed data. The values of single-electron reduced matrix elements representing the strengths of EPI of T-4(2) and T-4(1) bands have respectively been determined. For TS of the peak energies of T-4(2) and T-4(1) bands, it is found that the contribution to TS from the second-order term in EPI Hamiltonian is dominant; TS due to EPI of acoustic branches are over two times as much as those of optical branches, and both of them increase rapidly with temperature; the neighbor-level term is insignificant; the contribution to TS from thermal expansion is specially important, and all the three terms of TS of T-4(2) or T-4(1) band axe red shifts.

关键词: crystal fields;optical spectral bands;electron-phonon interaction;thermal expansion;thermal shift;theoretical calculations;high-pressure;field;spectroscopy;spectra

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