A.G.Mostafa
,
M.A.Salem
,
Z.A.El-Hadi
材料科学技术（英文）
Conductivity of glasses in the systems SiO2•PbO•RO, (where R=Ca, Sr or Ba) was investigated between room temperature and 530 K. The dependence of log resistivity as well as the activation energy on the PbO content has been studied. Based on the present experimental results, the possible different conduction mechanisms in such glasses are discussed. It was postulated that Pb2+ ions may represent the major charge carrying species in these glasses. This assumption was confirmed by the calculations of the mean distance between the interstitial Pb2+ ions and the effective center of the O2- ions in the glass networks. The variation in the values of the density and the molar volume with PbO content is also discussed in view of the obtained activation energies for the studied glass-systems.
关键词:
Ionic conductivity
,
null
,
null
李文连
液晶与显示
doi:10.3969/j.issn.1007-2780.2002.01.005
通过比较有机EL与无机EL、LCD在平板显示应用方面的差异,展示了OELD的美好应用前景.由于无机薄膜EL缺乏高亮度蓝基色成分以及驱动电压是100V左右的交流,难于制成低压彩色超薄显示器;无机分散型EL屏采用的是十几微米厚的粉末材料,也难于制成高分辨率超薄显示器,因此它们都无法与OELD相比.OELD显示器体积可以是LCD的1/2,功耗也大大低于LCD,所以OELD将有望取代LCD.评述了当前OELD的最新发展趋势:采用荧光染料掺杂式的模糊界面结构的电致荧光器件和采用荧光染料掺杂式的电致磷光器件是当前OELD发展的主要潮流.文中还评述了采用低折射率材料提高外量子效率的情况.
关键词:
电致发光
,
磷光
,
发光平板显示
王丽华
,
郝秋艳
,
解新建
,
刘红艳
,
刘彩池
材料热处理学报
利用金相显微镜和微区红外测量技术分析热处理对液封直拉法生长的大直径半绝缘砷化镓（LECSI-GaAs）单晶中深施主缺陷EL2的影响。结果表明，原生大直径SI—GaAs样品中EL2缺陷浓度沿直径方向的分布呈现中心区域较高、近中心区域最低、边缘区域最高的特点。500℃退火EL2缺陷浓度稳定，真空闭管并快速冷却条件下850℃以上退火时，EL2缺陷浓度随温度升高而下降。并分析了热处理对EL2缺陷的影响机理。
关键词:
半绝缘砷化镓
,
热处理
,
EL2缺陷
,
微区红外测量技术
