Baowei QIAO
,
Yunfeng LAI
,
Jie FENG
,
Yun LING
,
Yinyin LIN
,
TingAo TANG
,
Bingchu CAI
,
Bomy CHEN
材料科学技术（英文）
The amorphous Ge2Sb2Te5 film with stoichiometric compositions was deposited by co-sputtering of separate Ge, Sb, and Te targets on SiO2/Si (100) wafer in ultrahigh vacuum magnetron sputtering apparatus. The crystallization behavior of amorphous Ge2Sb2Te5 film was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and differential scanning calorimetry (DSC). With an increase of annealing temperature, the amorphous Ge2Sb2Te5 film undergoes a two-step crystallization process that it first crystallizes in face-centered-cubic (fcc) crystal structure and finally fcc structure changes to hexagonal (hex) structure. Activation energy values of 3.636±0.137 and 1.579±0.005 eV correspond to the crystallization and structural transformation processes, respectively. From annealing temperature dependence of the film resistivity, it is determined that the first steep decrease of the resistivity corresponds to crystallization while the second one is primarily caused by structural transformation from "fcc" to ``hex" and growth of the crystal grains. Current-voltage (I-V) characteristics of the device with 40~nm-thick Ge2Sb2Te5 film show that the Ge2Sb2Te5 film with nanometer order thickness is still applicable for memory medium of nonvolatile phase change memory.
关键词:
Co-sputtering
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null
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null
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null
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姜威
,
刘廷禹
,
孙颖
,
孙羽
人工晶体学报
基于密度泛函理论平面波赝势法对LaBr3晶体本征点缺陷进行了系统研究.通过第一性原理和热动力学方法,计算得到了不同温度及溴分压下LaBr3晶体中本征点缺陷的缺陷形成能,并讨论了不同环境条件下本征点缺陷的形成能随费米能级的变化关系.计算结果表明,当费米能级位于导带底附近时,LaBr3晶体中的主要点缺陷为Lai…能级位于价带顶附近时,LaBr3晶体中主要的点缺陷为Vlao…VBr在高温/低溴分压相对稳定,Vla在低温/高溴分压更稳定.本文还做出了最稳定点缺陷随温度、溴分压及费米能级变化的三维空间分布图,清晰地呈现了不同条件下,该晶体最可能出现的点缺陷类型,从而为调控晶体的点缺陷改善晶体光学性能提供参考.
关键词:
LaBr3晶体
,
密度泛函理论
,
点缺陷
,
热力学
