L.P. Wang
,
B. Y Tang
,
X.B. Tian
,
YX.Leng
,
Q. YZhang
,
P.K.Chu
材料科学技术(英文)
Cerium dioxide, CeO2, is a potentially superior material in a myriad of areas, and many methods have been proposed to deposit single crystal CeO2 thin films. A novel fabrication technique utilizing dual plasma generated by metal vacuum arc (MEVVA) and radio frequency (RF) is discussed in this paper. We have recently conducted a systematic investigation to determine the optimal process window to deposit CeO2 thin films'on Si(100) substrates. The X-ray diffraction results show the existence of CeO2(100) in the as-deposited sample
关键词:
X.B. Tian
,
L.P. Wang
,
D. T.K.Kwok
,
B. Y Tang
,
P.K.Chu
材料科学技术(英文)
Plasma immersion ion implantation (PIII) is an excellent technique for the surf see modification of complex-shaped components. Owing to pulsed operation mode of the high voltage and large slew rate, the capacitance on the high-voltage coaxial cable can be detrimental to the process and cannot be ignored. In fact, a significant portion of the rise-time/fall-time of the implantation voltage pulse and big initial current can be attributed to the coaxial cable.
关键词:
Powder Diffraction
K(2)Zn(3)(P(2)O(7))(2) was synthesized by solid state reaction and its crystal structure was determined by ab initio method from powder X-ray diffraction (XRD) data. The title compound was determined to be orthorhombic with space group P2(1)2(1)2(1), Z=4, and lattice parameters a=12.901(8) angstrom, b=10.102(6) angstrom, and c=9.958(1) angstrom. Values of lattice parameters from 303 to 573 K were measured by temperature-dependent XRD. Thermal expansion coefficients alpha(0), lattice parameters, and cell volume at 0 K were determined to be alpha(0)(a)=1.62327X 10(-4)/K, a(0)=12.855(4) angstrom, alpha(0)(b) = 1.17921 X 10(-4)/K, b(0)=10.070(8) angstrom, alpha(0)(c)=2.62364X 10(-4)/K, c(0)=9.880(4) angstrom, and alpha(0)(V) = 6.599 X 10(-2) /K, V(0) = 1278.967(0) angstrom(3). The specific heat equation as a function of temperature was determined to be C(p)=0.77115 +0.00231 T-1241.60027T(-2)- 1.4133 X 10(-6)T(2) (J/K g), for temperatures from 198 to 710 K. The melting point estimated from the mu-DTA heating curve is 795 degrees C. (C) 2008 International Centre for Diffraction Data. [DOI: 10.1154/1.2992517]
关键词:
K(2)Zn(3)(P(2)O(7))(2);structure determination;thermal expansion;coefficient;specific heat;powder-diffraction;refinement;zno
李淑兰
,
杨玉芬
兵器材料科学与工程
doi:10.3969/j.issn.1004-244X.2008.03.016
在介绍40CrMnSiMoVA钢的力学性能和试验条件基础上,根据金属材料疲劳裂纹扩展的统计分析方法,求出Pa-N和P-da/dN-△k曲线,并对不同应力比条件下的试验数据进行可靠性分析和比较,探讨中值da/dN-△k曲线和99.9%可靠度dddN-△k曲线的变化规律.研究结果表明,P-da/dN-△k曲线与应力比有很强的相关性,随着应力比增强,裂纹扩展速率增加.当可靠度要求增加时,这种趋势更明显.根据研究结果,恰当地考虑40CrMnSiMoVA钢对于不同应力比的影响,便于进行概率断裂力学分析.
关键词:
断裂
,
40CrMnSiMOVA钢
,
P-da/dN-△k曲线
,
应力比
戢景文
,
魏全金
,
张国福
,
赖祖涵
,
陈廷国
金属学报
研究了F? P—N合金加?对Snoek—Ke-Koster(SKK)峰的影响,发现与合金含La,P的原子浓度比(C_(La)/C_p)有关:对于C_(La)/C_p较大(例如4.56和2.6)的合金,La有明显增强SKK阻?效应:对于C_(La)/C_p=0.27的P过饱和合金,La对SKK峰无明显影响。
关键词:
内耗
,
Snoek-Ke-Koster peak
,
Fe-P-La-N alloy
段兴凯
,
胡孔刚
,
丁时锋
,
满达虎
,
张汪年
,
马明亮
稀有金属
采用真空熔炼和热压方法制备了Ga和K双掺杂Bi0.5Sb1.5Te3热电材料.XRD结果表明,Ga0.02Bi0.5Sb1.48-xKxTe3块体材料的XRD图谱与Bi0.5Sb1.5Te3的XRD图谱对应一致,但双掺杂样品的衍射峰略微向左偏移.热压块体材料中存在明显的(001)晶面择优取向.SEM形貌表明材料组织致密且有层状结构特征.Ga和K双掺杂可使Bi0.5Sb1.5Te3在室温附近的Seebeck系数有一定的提高,而双掺杂样品的电导率均得到了不同程度的提高,其中Ga0.02Bi0.5Sb1.42K0.06Te3样品的电导率得到较明显的改善.在300~500 K测量温度范围内,所有双掺杂样品的热导率高于Bi0.5Sb1.5Te3的热导率,在300 K附近双掺杂样品的ZT值得到提高,其中Ga0.02Bi0.5Sb1.42K0.06Te3样品在300 K时ZT值达到1.5.
关键词:
双掺杂
,
真空熔炼
,
热压
,
显微结构
,
热电性能