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Crystal Structure during Film Formation

Guoping DU , Hui SHEN , Lanping YUE , Weiguo YAO , Zongquan LI and Zhenzhong QI (Institute of Solid State Physics , Academia Sinica , Hefei , 230031 , China)(To whom correspondence should be addressed)

材料科学技术(英文)

For evaporation-deposited Ti films, face-centred cubic structure was observed at the initial stage of film growth, then transited to the hexagonal close-packed structure during film growing (less than 50 nm thick). While. for ion-beam sputter-deposited films. the structure of films always kept the fcc structure during all stages of film formation. The structure of film at initial growth stages relates with the substrate. It is discussed that different film processes and different growth stages provide different thermodynamic condition of film formation and result in the different crystal structures of films during the film formation

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预测复合材料非线性有效介电系数的割线方法

周萧明 , 胡更开

复合材料学报 doi:10.3321/j.issn:1000-3851.2004.06.026

提出了预测复合材料非线性电位移和电场强度关系的一种解析方法,该方法基于各向材料的割线介电常数,将非线性问题转化成一系列线性问题来求解.该方法适用于任意各向异性复合材料和组分材料的非线性性质,而常用的Stroud和Hui的模型只适用于各向同性复合材料和组分材料的弱线性.证明了本文方法具有Ponte Castaneda提出的变分结构.计算结果表明,当基体非线性较小时,本文模型的预测与Stroud和Hui的模型一致,但当基体非线性系数增大时,本文模型能给出合理的预测结果,而Stroud和Hui的模型则会超出基体和夹杂的性能范围.

关键词: 复合材料 , 介电常数 , 非线性 , 割线方法

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