Y.L.Yang
,
F.J.Sun
,
D.Zhang
金属学报(英文版)
The formation of Fe-N compounds by laser nitriding in an atmospheric ambient was reported.By CW-CO2 laser irradiation on pure ferrite iron in the atmospheric am-bient,Fe-N compounds (including Fe2N,Fe3N and Fe4N) are formed as a result of a laser-enhanced and temperature-enhanced reactions.The samples were analyzed with X-ray diffraction.It is found that the laser power density,scanning speed and nitro-gen temperature are the main factors influencing the formation of Fe-N compounds.Nitrogen can be activated by pre-heating at some temperature.Nitrogen activation and sample surface melting by CW-CO2 laser greatly enhance the reaction between the sample surface and nitrogen beam.After annealing at 500℃ for Sh,some Fe2N and Fe3N converted into more stable Fe4N.
关键词:
laser nitriding
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null
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null
Philosophical Magazine
The error of Equation (15b) in my article [Z.D. Zhang, Phil. Mag. 87 (2007) p.5309] in the application of the Jordan-Wigner transformation does not affect the validity of the putative exact solution, since the solution is not derived directly from that equation. Other objections of Perk's comment [J.H.H. Perk, Phil. Mag. 89 (2009) p.761] are the same as those in Wu et al.'s comments [F.Y. Wu et al., Phil. Mag. 88 (2008) p.3093; p.3103], which do not stand on solid ground and which I have sought to refute in my previous response [Z.D. Zhang, Phil. Mag. 88 (2008) p.3097]. The conjectured solution can be utilized to understand critical phenomena in various systems, whereas the conjectures are open to rigorous proof.
关键词:
3D Ising model;exact solution;conjecture;critical phenomena;ferromagnetism;magnetic phase transition;model;analyticity
Physical Review B
In the investigation of the optical and magnetic properties of the semiconductors containing transition-metal ions, the one-electron orbital cannot be treated with a pure d orbital because of a strong covalence. This paper presents the energy matrix of the d*(8) and d*(2) (d* means a modified d function) system, in which the covalence is described by two covalent factors. The differences between the matrix diagonal elements of the t(2)(m)e(n) term of the d*(8) system and the t(2)(6-m)e(4-n) term of the d*(2) system vary with m and n. The d(N) electron system can be explained with the d(10-N) hole system because the difference between the energy matrix of the d(N) and d(10-N) systems has a fixed value. However, this kind of simple relation does not exist for the d*(N) and d*(10-N) systems when the covalence is considered. A numerical calculation shows that the variation of the energy levels with the covalence for Ni2+ in the d*(8) electron system is larger than that in the d*(2) hole system. The calculated energy levels obtained from the d*(8) matrix are in good agreement with the experimental data of the Ni2+ ion for ZnS:Ni and ZnSe:Ni. This suggests that the d*(8) electron system instead of the d*(2) hole system should be used in the investigation of optical and magnetic properties of semiconductor containing Ni2+ ions.
关键词:
zns-ni;absorption;vanadium;impurities;spectra;ions
Journal of Materials Research
The morphology of the dark and bright regions observed by transmission electron microscopy for the Zr(64.13)Cu(15.75)Ni(10.12)Al(10) bulk metallic glass strongly depends on the ion beam parameters used for ion milling. This indicates that the ion beam could introduce surface fluctuation to metallic glasses during ion milling.
关键词:
room-temperature
张兴
,
郑成武
,
李宁
,
周兴丹
,
李正强
,
华瑞茂
液晶与显示
doi:10.3788/YJYXS20122704.0448
介绍了3D显示的基本原理,重点介绍了目前3D显示的主流技术类型,包含了眼镜式3D技术以及裸眼式3D技术,其中眼镜式3D技术包含色差式3D技术、偏光式3D技术和主动快门式3D技术;裸眼式3D技术包含视差屏障式3D技术、柱状透镜式3D技术、指向光源式3D技术和多层显示式3D技术.阐述了各种3D显示技术的基本实现原理和应用领域、并对涉及液晶显示的几种3D技术的优缺点进行了对比.结合液晶材料的特点与3D液晶显示的实际要求,阐述了3D液晶面板对液晶材料快速响应方面的要求,以及液晶透镜对液晶材料光学各向异性参数的要求.
关键词:
3D显示
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眼镜式3D显示
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裸眼式3D显示
,
液晶材料
D.Han
,
S.R.Qiao
,
M.Li
,
J.T.Hou
,
X.J.Wu
金属学报(英文版)
The differences of tension-tension fatigue and tensile creep characters of 2D-C/SiC and 3D-C/SiC composites have been scrutinized to meet the engineering needs. Experiments of tension-tension fatigue and tensile creep are carried out under vacuum high temperature condition. All of the high temperature fatigue curves are flat; the fatigue curves of the 2D-C/SiC are flatter and even parallel to the horizontal axis. While the tension-tension fatigue limit of the 3D-C/SiC is higher than that of the 2D-C/SiC, the fiber pullout length of the fatigue fracture surface of the 3D-C/SiC is longer than that of the 2D-C/SiC, and fracture morphology of the 3D-C/SiC is rougher, and pullout length of the fiber tows is longer. At the same time the 3D-C/SiC has higher tensile creep resistance. The tensile curve and the tensile creep curve of both materials consist of a series of flat step. These phenomena can be explained by the non-continuity of the damage.
关键词:
2D-C/SiC
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null
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null