Xuexi ZHANG
,
Dezun WANG
,
Dongyan DING
,
Congkai YAO
材料科学技术（英文）
Mathematical model of unidirectional infiltration was set up and metal infiltration velocity and temperature fields of the metal, preform, and composites were calculated using the finite difference method. The metal infiltration velocity has a close relationship with infiltration time. It is very large after the infiltration begins in a few seconds, then the velocity keeps almost constant. The temperature field of the composite proves that metal matrix composites (MMCs) after unidirectional pressure infiltration can solidify from the entrance of the preform to the infiltration front, which is useful for obtaining the MMCs with low porosity and high properties.
关键词:
Applied Physics a-Materials Science & Processing
Amorphous aluminate YAlO3 (YAO) thin films on n-type silicon wafers as gate dielectric layers of metal - oxide semiconductor devices are prepared by pulsed laser deposition. As a comparison, amorphous aluminate LaAlO3 (LAO) thin films are also prepared. The structural and electrical characterization shows that the as-prepared YAO films remain amorphous until 900 degrees C and the dielectric constant is similar to 14. The measured leakage current of less than 10(-3) A/cm(2) at a bias of V-G = 1.0 V for similar to 40-nm-thick YAO and LAO films obeys the Fowler Nordheim tunneling mechanism. It is revealed that the electrical property can be significantly affected by the oxygen pressure during deposition and post rapid thermal annealing, which may change the fixed negative charge density at the gate interface.
关键词:
hafnium oxide;si;stability;silicon;transition;dioxide;devices;hfo2
