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REDISTRIBUTION OF IMPURITY ATOMS AI, Si, Mn AND Cu IN Ni DURING LASER MELTING

ZHENG Ling , Chongqing Institute of Communications , Chongqing , ChinaZOU Zhirong , LIU Jianglong , Chongqing University , Chongqing , China ZHENG Ling , Lecturer , Department of Mechanical Engineering , Chongqing Institute of Communications , Chongqing 630074 , China

金属学报(英文版)

An explanation of the redistribution of impurity atoms such as Al, Si, Mn and Cu in pure nickel during low speed laser melting is made by one-dimensional analysis model for heat transfer. The solid-liquid interface solute redistribution seems to be the principal cause that makes the impurity atoms redistribute in the depth direction. The diffusion of impurity atoms from low to high temperature zones and their surface selective evaporation are believed to be noticeably contributed to the redistribution.

关键词: Ni , null , null , null

Guangzhou Institute of Energy Conversion,The Chinese Academy of Sciences,Guangzhou 510070,China

B.W. Wang , H. Shen

金属学报(英文版)

Ni-Cr System solar selective thin solid films were prepared by d.c. magnetron reactivesputtering under the atmosphere of O2 and N2. Ni-Cr alloy was chosen as targetmaterial and copper sheets as substrate. Using SEM, Spectrophotometer and Talystepto analyze the relations between the selective characteristic and the structure, theformation and the thickness of the thin films. The aim is to obtain good solar selectivethin films with high absorptance and low emittance, which is applied to flat plate solarheat collectors.

关键词: solar selective thin film , null , null , null

MICROSTRUCTURE AND PROPERTIES OF SiC_w/6061Al COMPOSITE The Author is now with Institute of Metal Research,Academia Sinica,China

MA Zongyi YAO Zhongkai Harbin Institute of Technology , Harbin , China

金属学报(英文版)

The SiC_w/Al composite prepared by squeeze casting has a combination of superior room temperature specific strength and modulus together with excellent thermal properties.The extrusion can make an improvement on the strength and ductility of the composite from 582 MPa as squeeze casted up to 639 MPa,and on the transformation from isotropic to the anisotropic structure.This seems to be explained by the orientation of whiskers and the densification of dislocations in matrix.TEM observation indicates that the stacking fault is the usual planar defect on the SiC_w surface. composite;;SiC whisker;;Al alloy;;microstructure

关键词: composite , null , null , null

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