材料期刊网

Molecular Electrical Conductor Ni(C_3S_5)_2

Hong LEI (Dept. of Electronic Engineering , Shandong University , Jinan 250100 , China)Qi FANG and Minhua JIANG (Institute of Crystal Materials , Shandong University , Jinan 250100 , China)Yueming SUN (Dept. of Chemistry Southeast University Nanjing 210093 , Chi

材料科学技术（英文）

The molecular based electrical conductor Ni(C3S5)2 has been prepared and its conductivity has been measured from room temperature down to 60 K. Above 167 K Ni(C3S5)2 exhibits a semiconductive behaviour, below this temperature it turns to exhibit metallic conductivity. Based on a tight-binding energy band calculation, an expression for the number of conducting electrons has been deduced. The calculated conducting activation energy is quite well in accordance with the measuring value.

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Advances in Organolanthanide Chemistry in China

杨庆祥 , 吴浩泉

中国稀土学报

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用DEPT135测定Resol的组成及微细结构参数

杨金瑞 , 余尚先 , 顾江楠

高分子材料科学与工程

通过对resol(羟甲基酚化合物和低分子量羟甲基酚树脂)DEPT135图谱的分析讨论,得到一系列计算resol微细结构参数的经验公式.根据DEPT135图谱可判断是否发生缩聚反应,根据经验公式可计算酚单体各个活性点参与反应百分率或酚羟基导入率、不同类型缩聚所占百分率及低分子量羟甲基酚树脂的平均核体数.

关键词: 羟甲基酚化合物 , 羟甲基酚树脂 , DEPT135 , 结构参数

ATOMIC FORCE MICROSCOPY OBSERVATION OF MAGNETRON SPUTTERED ALUMINUM-SILICON ALLOY FILMS

金属学报(英文版)

粒裕希停桑谩。疲希遥茫拧。停桑茫遥希樱茫希校佟。希拢樱牛遥郑粒裕桑希巍。希啤。停粒牵危牛裕遥希巍。樱校眨裕裕牛遥牛摹。粒蹋眨停桑危眨停樱桑蹋桑茫希巍。粒蹋蹋希佟。疲桑蹋停?##2##3##4##5ATOMICFORCEMICROSCOPYOBSERVATIONOFMAGNETRONSPUTTEREDALUMINUM-SILICONALLOYFILMSJ.W.Wu,J.H.FangandZ.H.Lu(NationalLaboratoryofMoleculeandBiomoleculeElectronics,SoutheastUniversity,Nanjing210096,ChinaManuscriptreceived27October1995)Abstrcat:Twodifferentsurfacemorphologycharacteristicsofmagnetronsputteredaluminumsilicon(Al-Si)alloyfilmsdepositedat0and200℃wereobservedbyatomicforcemicroscopy(AFM).Oneisirregularlyshapedgrainsputtogtheronaplane.TheotherisirregularlyshapedgrainsPiledupinspace.Nanometer-sizedparticleswithheightsfrom1.6to2.9nmwerefirstobserved.Onthebasisoftheseobservationsthegrowthmechanismofmagnetronsputteredfilmsisdiscussed.Keywords:magnetronsputtering,Al-Sialloy,surfacemorphology,atomicforcemicroscopy,filmgrowthmechanism1.IntroductionTheuseofaluminumalloys[1,2],inparticularAl-Si,isacommonfeatureinmanysinglelevelandmultilevelinterconnectionschemesadoptedinthemanufactureofmicroelectronicdevicesbecauseofseveraldesirableproperties.TheAl-Sigrainmorphology(size.geometryanddistributionofgrainsisassociatedwithstepcoverage[3],electromigration[4]andinterconnectsresistivity[5]etc..Thus,characterizationofAl-Sialloysurfacemorphologyisveryimportant,especiallywhenintegratedintensityincreasesandlinewidthsof0.3to0.5μmbecomecommon.Inthepasttwentyyears,theAl-Sialloysurfacemorphologywhichaffectsthereliabilityofmicroelectronicdeviceshasbeenwidelyinvestigatedbyscanningelectronmicroscopy(SEM),transmissionelectronmicroscopy(TEM)etc.[5-7].However,SEMandTEMhavetheirlimitationorinconvenience,forexample,theverticalresolutionofSEMisnothighandTEMneedscomplexsamplepreparation.Recently,anewgrainboundaryetchingmethodwasproposed￣[8]whichalsoneedstroublesomechemicaletching.Atomicforcemicroscopy(AFM),sinceitsemerging,hasbecomemoreandmoreusefulinphysics,chemistry,materialsscienceandsurfacescience,becauseofitshighresolution,easeofsamplepreparationandrealsurfacetopography.Recently,discussion[9,10]waspresentedonhowAFMwillplayaroleinsemiconductorindustry.Asaresponsetothisdiscussion,weusedAFMtoinvestigateAl-SialloysurfacemorphologyandhaveobtainedsomeresultswhichcannotberevealedbySEMorTEM.ThisindicatesthatAFMisagoodcharacterizationtoolinsemiconductorindustry.2.SamplePreparationInourexperiments,aluminumwith30ppmsiliconwassputteredonsiliconsubstrateinbatchdepositionmodeAllthreefilmswiththicknessof1.6μmweredepositedusinganargonsputteringpressureof4.2×10￣-3Pa.TheotherdepositionparametersaredescribedinTable1.Thesubstratewascleanedusingstandardpremetallizationcleaningtechniquespriortofilmdeposition.3.ExperimentalResultsandDiscussionTheAFMmeasurementswereperformedonacommercialsystem(NanoscopeIII,DigitalInstruments,SantaBarbara).Thetipismadeofmicrofabricatedsiliconnitride(Si_3N_4)Itisattachedtoa200μmcantileverwithaforceconstantofabout0.12N/m.Beforethesurfaceofsamplewasexamined.agoodtipwithananometer-sizedprotrusionatitsendwasselectedbeforehand,whichcanbeobtainedbyimagingtheatomicstructureofmicasubstrateandagoldgrid.AtypicaloperatingforcebetweenthetipandAl-Sisamplesurfaceisoftheorderof10￣-8Nandallimagesweretakenatroomtemperatureinair.AtypicaltopographicviewoftheAl-SifilmsisshowninFig.1(allimagescansizeis5by5μma,bandcarerespectivelyforsample1,2,and3).FromFig.la,itcanbeseenthatirregularlyshapedgrainstiltinginvaryingdegreespileupinspace,andgroovesamongtheirregularlyshapedgrainsaredifficulttodecideatacertainarea(wedefineitascharacteristicA).Toourknowledge,onreportsonthesurfacemorphologyhavebeenpresentedbefore.InFig1b,however,irregularlyshapedgrainsassembleonaPlaneandgroovesamongtheirregularlyshapedgrainsareeasytodecide(wedefineitascharacteristicB),whichisinagreementwithmanypreviousreports[5-7].InFig.1c,bothcharacteristicA(arrowA)andcharacteristicB(arrowB)wereobserved.IndoingAFMexperiments,weselectedfivedifferentscanareastobeimagedforeachsampleandfoundthatallimagesofeachsamplearerespectivelysimilartoFig.1a,bandc.Also,wenotedthatthesurfaceofinFig.1a.WethinkthatdepositionparameterswillinfluenceAl-Sisurfacemorphology,andthetiltedgrainsmaybesusceptibletomicrocracking.Byreducingthescansizeareato2by2μm(Fig.2aandb).Weobtainedmanyidenticalresultsasdescribedabove,suchasirregularlyshapedgrainsetc.Forthefirsttime,wefoundnanometersizedparticlesonirregularlyshapedgrainsurfacewhichcannotberevealedbySEMbecausethediameterofthesenanoparticlesisabout10nmandtheheightofthesenanoparticlesisintherangeof1.6to2.9nm.Inimaging,wenotedthatrotatingthescandirectionandchangingthescanfrequencydidnotaffectthestructureofthesegrainsasshowninFig.2aandb,rulingoutthepossibilitythatscanninginfluencedtheshapeoftheseparticlesorcausedsomesimilarimagingartifacts.Also,wenotedthatthenanoparticleswerenotobservedontheslopesofthegrooves(Fig.2aandb).Thisphenomenoncanbeexplainedasfollows:thepotentialenergyattheslopeislargerthanthatelsewhere,sotheparticlesseemmorelikelytobedepositedontheseareaswithlowerpotentialenergy.Fig.2c,scansize250by250nm,isazoomtopographicimage(whiteoutlineinb).Itshowsunevendistributionofthenanoparticles.Andtheheightdifferenceofthenanoparticlesindicatesdifferentgrowingspeed.Wethinkbasedonthemorphologyofnanoparticles,thattheheightdifferenceandunevendistributionofthesenanoparticlesshowdifferentgrowingadvantageandindicatethatatomshaveenoughenergytomovetoasuitablegrowingspot.Theenergymaybefromthefollowingsources:surfacetemperaturefluctuation,stressdifferenceorcollisionbetweenhighspeedsputteredatoms.Thesenanoparticlesgoongrowingandformmanyirregularlyshapedgrains.AndtheseirregularlyshapedgrainsfurtherconnecteachotheraccordingtocharacteristicAorB,finallyformingtheAl-Sisurfacemorphology.4.ConclusionWecandrawthefollowingconclusionsfromtheabove.First,theexperimentalresultsshowedthatAFMisapowerfultooltoinvestigatethedetailsofAl-Sisurfacemorphologywhichcangreatlyenrichourknowledgeofthefilmgrowthmechanism.Second,depositionconditionsplayanimportantroleindeterminingtheAl-Sisurfacemorphology.Third,thetwoAl-Sisurfacemorphologycharacteristicsarethatirregularlyshapedgrainsassembleonaplaneandirregularlyshapedgrainstiltinginvaryingdegreespileupinspace.Fourth,forthefirsttime,nanoparticleswereobservedonirregularlyshapedgrainsurfacewhichsuggestedthatthefilmgrowthmechanismwasbyinhomogeneousnucleation.Acknowledgements-BeneficialdiscussionswereheldwithDr.ZhenandMr.Zhu.ThisworkwaspartiallysupportedbytheNationalNaturalScienceFoundationofChina.RFFERENCES｜｜1D.pramanikandA.N.Saxena,SolidStateTechnol.26(1983)127.2D.pramanikandA.N.Saxena,SolidStateTechnol.26(1983)131.3D.pramanikandA.N.Saxena,SolidStateTechnol.33(1990)73.4S.S.IyerandC.Y.Worg,J.Appl.phys.57(1985)4594.5J.F.Smith,SolidStateTechnol.27(1984)135.6D.GerthandD.Katzer,ThinSolidFilm208(1992)67.7R.J.WilsonandB.L.Weiss,ThinSolidFilm207(1991)291.8E.G.Solley,J.H.Linn,R.W.BelcherandM.G.Shlepr,SolidStateTechnol33(1990)409I.SmithandRHowland,SolidStateTechnol.33(1990)53.10L.Peters,SemiconductorInternational16(1993)62.##61D.pramanikandA.N.Saxena,SolidStateTechnol.26(1983)127.2D.pramanikandA.N.Saxena,SolidStateTechnol.26(1983)131.3D.pramanikandA.N.Saxena,SolidStateTechnol.33(1990)73.4S.S.IyerandC.Y.Worg,J.Appl.phys.57(1985)4594.5J.F.Smith,SolidStateTechnol.27(1984)135.6D.GerthandD.Katzer,ThinSolidFilm208(1992)67.7R.J.WilsonandB.L.Weiss,ThinSolidFilm207(1991)291.8E.G.Solley,J.H.Linn,R.W.BelcherandM.G.Shlepr,SolidStateTechnol33(1990)409I.SmithandRHowland,SolidStateTechnol.33(1990)53.10L.Peters,SemiconductorInternational16(1993)62.##A##BATOMIC FORCE MICROSCOPY OBSERVATION OF MAGNETRON SPUTTERED ALUMINUM-SILICON ALLOY FILMS$$$$J.W.Wu,J.H. Fang and Z.H.Lu (National Laboratory of Molecule and Biomolecule Electronics,Southeast University,Nanjing 210096, China Manuscript received 27 October 1995)Abstrcat:Two different surface morphology characteristics of magnetron sputtered aluminumsilicon(Al-Si)alloy films deposited at 0 and 200℃ were observed by atomic force microscopy(AFM).One is irregularly shaped grains put togther on a plane.The other is irregularly shaped grains Piled up in space. Nanometer-sized particles with heights from 1.6 to 2.9 nm were first observed. On the basis of these observations the growth mechanism of magnetron sputtered films is discussed.

关键词: :magnetron sputtering , null , null , null , null

Metal-Free Heterogeneous Catalysis for Sustainable Chemistry

Chemsuschem

The current established catalytic processes used in chemical industries use metals, in many cases precious metals, or metal oxides as catalysts. These are often energy-consuming and not highly selective, wasting resources and producing greenhouse gases. Metal-free heterogeneous catalysis using carbon or carbon nitride is an interesting alternative to some current industrialized chemical processes. Carbon and carbon nitride combine environmental acceptability with inexhaustible resources and allow a favorable management of energy with good thermal conductivity Owing to lower reaction temperatures and increased selectivity, these catalysts could be candidates for green chemistry with low emission and an efficient use of the chemical feedstock This Review highlights some recent promising activities and developments in heterogeneous catalysis using only carbon and carbon nitride as catalysts The state-of-the-art and future challenges of metal-free heterogeneous catalysis are also discussed.

关键词: carbon;catalyst;heterogeneous catalysis;selectivity;sustainable;chemistry;graphitic carbon nitride;modified activated carbon;nanofiber/graphite-felt composite;ordered mesoporous carbons;oxygen;reduction reaction;nitrogen-doped graphite;fuel cell cathode;onion-like carbon;oxidative dehydrogenation;hydrogen-production

STATISTICAL EVALUATION OF CRITICAL INCLUSION FACTOR FOR SECONDARY RECRYSTALLIZATON IN 3%Si STEEL Lecturer,Department of Materials Engineering,Southwestern Jiaotong University,Chengdu 610031,China

LI Shuchen Southwestern Jiaotong University , Chengdu , ChinaCHEN Mengzhe KE Jun University of Science and Technology Beijing , Beijing , China

金属学报(英文版)

On the basis of statistical data of MnS in the conventional 3% Si steel sheeets after various annealing processes,the critical inclusion factor has been evaluated to be 20 mm~(-1).The inhi- bition of MnS to grain growth has been exactly described.

关键词: 3%Si steel , null , null

CORRELATION BETWEEN STRESS COMPONENTS AND STRESS CORROSION CRACKS IN BRASS Lecturer,Department of Materials Physics,University of Science and Technology Beijing,Beijing 100083,China

QIAO Lijie LIU Rui XIAO Jimei University of Science and Technology Beijing , Beijing , China

金属学报(英文版)

The effects of stress components on nucleation sites and propagation directions of stress cor- rosion cracks in brass were investigated with specimens under mode Ⅱ and mode Ⅲ loadings. The results indicated that under mode Ⅱ loading,stress corrosion cracks nucleated on the site with maximum normal stress component and propagated along the plane perpendieular to the maximum normal stress,under mode Ⅲ loading,the stress corrosion crack was not evident on the 45°plane due to the general corrosion in aqueous solution with high NH_4OH concentra- tion,while stress corroded in aqueous solution with low NH_4OH concentration, numerous cracks with spacings of 10—150μm were found on the 45°plane with maximum normal stress and no stress corrosion cracks was observed on the plane with maximum shear stress.

关键词: stress corrosion cracking , null , null , null

Introduction to atmospheric corrosion research in China

Science and Technology of Advanced Materials

In this paper, we introduce the research on atmospheric corrosion in China. We describe the climate characteristics and the classification of atmospheric corrosivity across the whole country. We also describe the rusting evolution under simulated wet/dry cyclic conditions. (C) 2007 NIMS and Elsevier Ltd. All rights reserved.

关键词: atmospheric corrosion;corrosivity;rusting evolution;weathering steels;rust;mechanism;so2;o-3;no2

Recent Advances of Laser Coating Technology in China

LIANG Yong LI Ruiguo Institute of Metal Research , Academia Sinica , Shenyang 110015 , ChinaInstitute of Corrosion and Protection of Metals , Aademia Sinica , Shenyang , 110015 , China

材料科学技术（英文）

Recent advances in laser coating technology including laser cladding,laser surface alloying and laser vapour deposition in China are reviewed in this paper.

关键词: laser , null , null , null , null

SERS and Quantum Chemistry Studies of Adsorption of Thiourea and Ethylthiourea on Silver Electrode

Acta Physico-Chimica Sinica

Adsorption of thiourea (TU) and ethylthiourea( ETU) on roughened silver electrode was investigated using in situ surf. enhanced Raman spectroscopy(SERS) Using quantum chemistry and HSAB theories, the influences of electrode potential and the different substituent groups on SERS were disc i. TU is chemisorbed perpendicularly by Ag-S bond on silver at E = -0.3 V and adsorption of TU turns into a parallel orientation at E = -0.9 V. ETU is always chemisorbed at an angle from Ag. The adsorption of ETU is through and C=C and C=O groups at E = -0.3 V, and mainly through C=C at E = -0.9V.

关键词: Surface enhanced Raman spectroscopy;Adsorption;Quantum chemistry;Thiourea;Inhibitor