{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"在低温下,利用Ag箔作中间层对Ti-6A1-4V钛合金(TC4)和无氧铜(OFC)进行了扩散焊接.结果表明Ag箔中间层阻止了Ti-Cu金属间化合物的生成,改善了TC4/OFC焊接接头的界面组织结构和焊接强度.同时,Ag箔中间层的添加也降低了TC4/OFC接头的焊接温度.焊接界面从TC4侧到OFC侧依次是TC4基体,AgTi金属间化合物,Ag中间层,Ag-Cu固溶体和OFC基体.在工艺条件:T=700℃,P=10 MPa,t=60 min下,TC4/Ag/OFC焊接接头的抗拉强度为150 MPa,其值高于直接焊接时的抗拉强度.焊接接头断裂发生在Ag/OFC界面,并且呈韧性断裂.我们可以推测AgTi化合物的韧性性能优于Ag-Cu固溶体.","authors":[{"authorName":"沈强","id":"7d7ec8c5-4d48-4f05-9ee0-e0fb2c47663d","originalAuthorName":"沈强"},{"authorName":"向会英","id":"07812f41-f8de-429a-91af-989d00388de3","originalAuthorName":"向会英"},{"authorName":"李美娟","id":"6e8e767b-57d2-4dcd-a333-ee933dbf494e","originalAuthorName":"李美娟"},{"authorName":"罗国强","id":"6a85ac46-a0de-4288-a615-5f9b17ee668b","originalAuthorName":"罗国强"},{"authorName":"<span style=\"color:red\">王</span>仪宇","id":"5bcb98a7-1b21-4638-9304-6c7735fdce6f","originalAuthorName":"王仪宇"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">传</span><span style=\"color:red\">彬</span>","id":"a9f5895c-b1b8-42ac-be66-10cf640602aa","originalAuthorName":"王传彬"},{"authorName":"张联盟","id":"6d65c259-c74b-4285-bbe7-12f560dd7e1a","originalAuthorName":"张联盟"}],"doi":"","fpage":"2607","id":"0ee8f444-249c-4f4d-b80b-d0b3e12aa99b","issue":"11","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"924583ee-d2d1-45df-ac4d-42886ab0d3d2","keyword":"扩散焊接","originalKeyword":"扩散焊接"},{"id":"152cadb9-f6c3-47a0-9578-05bb91f98040","keyword":"Ag中间层","originalKeyword":"Ag中间层"},{"id":"7e48205e-25dc-4c67-ba97-943bd987e2c4","keyword":"显微组织","originalKeyword":"显微组织"},{"id":"314ccf75-6ab6-4322-a037-78a661207605","keyword":"力学性能","originalKeyword":"力学性能"},{"id":"6f83116c-537e-4c8b-891f-3e9e6683c793","keyword":"TC4钛合金","originalKeyword":"TC4钛合金"},{"id":"dd926015-dd4f-4b0b-8abe-be2a4d30abde","keyword":"无氧铜","originalKeyword":"无氧铜"}],"language":"zh","publisherId":"xyjsclygc201511002","title":"利用Ag箔作中间层实现Ti-6Al-4V钛合金/无氧铜的低温高强扩散焊接","volume":"44","year":"2015"},{"abstractinfo":"利用Sol-gel工艺在Pt/Ti/SiO2/Si衬底上制备了Pb(Zr0.53Ti0.47)O3(PZT)薄膜,研究了退火温度、保温时间和薄膜厚度对其晶相、微观结构和铁电性能的影响.在500℃退火处理的PZT薄膜开始形成钙钛矿相;在550℃退火处理的PZT薄膜基本形成钙钛矿相结构;升高退火温度(500～850℃)、延长保温时间(30～150min)、增加薄膜厚度(120～630nm)都有利于PZT晶粒的长大.在650～750℃退火的PZT薄膜具有较好的铁电性能,保温时间对PZT薄膜的铁电性能影响不大,PZT薄膜的厚度为200～300nm时可以得到比较好的铁电性能.在退火温度750℃、保温时间30min条件下退火处理厚310nm的PZT薄膜,其剩余极化值(2Pr)和矫顽电场(2Ec)分别是72μC/cm2、158kV/cm.","authors":[{"authorName":"郭冬云","id":"b7232882-8d8d-4e68-a50c-2f1b4136e126","originalAuthorName":"郭冬云"},{"authorName":"毛薇","id":"1d2042cc-5ae0-4419-bfcd-39e09880d531","originalAuthorName":"毛薇"},{"authorName":"秦岩","id":"4a91c1eb-993f-4af4-98d5-352dacebcd64","originalAuthorName":"秦岩"},{"authorName":"黄志雄","id":"3d49ede2-9391-40e2-9834-729301426e45","originalAuthorName":"黄志雄"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">传</span><span style=\"color:red\">彬</span>","id":"62231073-d7f1-4938-8212-837a9008c41d","originalAuthorName":"王传彬"},{"authorName":"沈强","id":"3d51c3ab-48ba-4720-aaea-a530331795e3","originalAuthorName":"沈强"},{"authorName":"张联盟","id":"01702928-2302-4083-9595-46bd929e9c24","originalAuthorName":"张联盟"}],"doi":"","fpage":"16","id":"90cba41c-fd4b-4766-8edb-4369d01750c4","issue":"22","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"75e31c89-9a18-4758-8333-46661eec2546","keyword":"Pb(Zr0.53Ti0.47)O3薄膜","originalKeyword":"Pb(Zr0.53Ti0.47)O3薄膜"},{"id":"aff7ec14-cb8c-455d-9fdf-d9f2d871a829","keyword":"Sol-gel工艺","originalKeyword":"Sol-gel工艺"},{"id":"c98837ab-719b-4818-802c-efafbd5c9c3d","keyword":"退火温度","originalKeyword":"退火温度"},{"id":"c6ace941-9521-4f3d-b3b0-ebdb401f3908","keyword":"保温时间","originalKeyword":"保温时间"},{"id":"7ce92f3d-a830-4c25-af35-3d3e35ccb26c","keyword":"薄膜厚度","originalKeyword":"薄膜厚度"},{"id":"1c350515-8caa-48d8-bf7c-3f82b4d5be5f","keyword":"铁电性能","originalKeyword":"铁电性能"}],"language":"zh","publisherId":"cldb201022005","title":"Sol-gel法制备Pb(Zr0.53Ti0.47)O3铁电薄膜","volume":"24","year":"2010"},{"abstractinfo":"以TiCl4,MgCl2,AlCl3水溶液为原料,以氨水(NH3·H2O)和碳酸氢铵(NH2HCO3)为沉淀剂,利用化学共沉淀法,制备出了Al2(1-x)MgxTi1+xO5(x=0.05～0.3)复合粉体,用TG-DTA,XRD等对其进行了表征,并结合晶格常数的计算,定性、定量地说明用化学共沉淀法比固相法制备的该复合粉体更有效地提高了Al2TiO5的热稳定性;获得了制备稳定Al2TiO5复合粉体Al2(1-x)MgxTi1+xO5(x=0.05～0.3)最佳工艺条件:MgTi2O5的摩尔分数30%,氨水浓度2mol/L,沉淀时溶液的pH值9.0,煅烧温度1350℃.","authors":[{"authorName":"杨蕊","id":"fdf01448-c898-4c03-b188-de23de30124f","originalAuthorName":"杨蕊"},{"authorName":"沈上越","id":"bf8d071a-b359-475d-b4c9-282d84adc7fe","originalAuthorName":"沈上越"},{"authorName":"沈强","id":"06ee7027-fb84-4044-ba35-e3a0a8c68438","originalAuthorName":"沈强"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">传</span><span style=\"color:red\">彬</span>","id":"de44602a-555f-49cd-ae83-ff04a5b884b9","originalAuthorName":"王传彬"},{"authorName":"张联盟","id":"c9585f8a-8da0-4325-8d39-0bcea8c8a27b","originalAuthorName":"张联盟"}],"doi":"10.3969/j.issn.1001-1625.2005.03.023","fpage":"89","id":"0b56e525-b61f-418a-ad40-f32ff327edc7","issue":"3","journal":{"abbrevTitle":"GSYTB","coverImgSrc":"journal/img/cover/GSYTB.jpg","id":"36","issnPpub":"1001-1625","publisherId":"GSYTB","title":"硅酸盐通报   "},"keywords":[{"id":"cc606fff-8b8a-4150-8b88-de46f97fede4","keyword":"钛酸铝 化学共沉淀 Al2(1-x)MgxTi1+xO5(x=0.05～0.3)复合粉体","originalKeyword":"钛酸铝 化学共沉淀 Al2(1-x)MgxTi1+xO5(x=0.05～0.3)复合粉体"}],"language":"zh","publisherId":"gsytb200503023","title":"化学共沉淀法制备Al2(1-x)MgxTi1+xO5 体系复合粉体研究","volume":"24","year":"2005"},{"abstractinfo":"本文以市售高纯硅粉作为原料,采用液氮低温球磨方法,制备高纯、晶粒尺寸可控、表面钝化的纳米晶硅粉.重点研究球磨工艺(球磨时间、球磨转速)对纳米晶硅粉晶粒尺寸、物相、微观结构的影响,液氮低温球磨法对纳米晶硅粉的表面钝化,并测试制得的纳米晶硅粉的光致发光性能.结果表明:通过液氮低温球磨可制得物相单一、晶粒尺寸均匀可控、表面氮钝化的纳米品硅粉；同时,光致发光性能结果表明随着纳米晶硅粉晶粒尺寸的降低,其光致发光谱明显蓝移,峰值从605nm移至590hm,且峰强显著增强.","authors":[{"authorName":"<span style=\"color:red\">王</span>志浩","id":"d58ab718-d62c-4b54-9aee-451ffa508453","originalAuthorName":"王志浩"},{"authorName":"陈斐","id":"0e6d274d-e1fc-48e1-95b6-3348686431a2","originalAuthorName":"陈斐"},{"authorName":"沈强","id":"5b8221ac-7bf2-4694-80f6-0bf445061a0a","originalAuthorName":"沈强"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">传</span><span style=\"color:red\">彬</span>","id":"7d90aae6-77bc-412a-9b61-232038999fd0","originalAuthorName":"王传彬"},{"authorName":"张联盟","id":"19567078-c828-49f9-bffd-0c642c0362f4","originalAuthorName":"张联盟"}],"doi":"10.3969/j.issn.1001-4381.2010.z2.103","fpage":"374","id":"222a1d41-1a77-4de6-919a-3259cafaf531","issue":"z2","journal":{"abbrevTitle":"CLGC","coverImgSrc":"journal/img/cover/CLGC.jpg","id":"9","issnPpub":"1001-4381","publisherId":"CLGC","title":"材料工程"},"keywords":[{"id":"5066d23a-d20f-4735-8a03-aa58f4e241e6","keyword":"纳米晶硅粉","originalKeyword":"纳米晶硅粉"},{"id":"88246598-c766-494f-859e-f868f1d3a9e8","keyword":"液氮低温球磨","originalKeyword":"液氮低温球磨"},{"id":"72807f11-30db-4d89-a66c-2b9693dff13f","keyword":"晶粒尺寸","originalKeyword":"晶粒尺寸"},{"id":"23fe741f-f7eb-4b1c-a6b9-423eacb13eef","keyword":"光致发光性能","originalKeyword":"光致发光性能"}],"language":"zh","publisherId":"clgc2010z2103","title":"尺度可控纳米晶硅粉的液氮低温球磨制备及其光致发光性能研究","volume":"","year":"2010"},{"abstractinfo":"利用脉冲激光沉积技术,在MgO(100)衬底上生长了BaTi2O5薄膜,探讨了沉积条件(衬底温度和氧分压)对薄膜结构的影响,并对其介电和光学性能进行了研究.结果表明:随衬底温度和氧分压的改变,BaTi2O5薄膜的物相和结晶取向逐渐变化;适宜的脉冲激光沉积工艺为衬底温度950~1000 K、氧分压12.5 Pa,在该条件下获得了b轴方向择优生长的BaTi2O5薄膜;该薄膜具有较高的居里温度(750 K),介电常数达2000,而且在可见光和红外波长范围内具有较高的透过率.","authors":[{"authorName":"李凌","id":"7571ef7a-9f68-498d-a100-43dce9139d6c","originalAuthorName":"李凌"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">传</span><span style=\"color:red\">彬</span>","id":"fe18c3ff-af26-49e8-90af-18e76b24c135","originalAuthorName":"王传彬"},{"authorName":"<span style=\"color:red\">王</span>芳","id":"46aee744-4f2e-4214-a560-93e59028f5e1","originalAuthorName":"王芳"},{"authorName":"沈强","id":"8f1262d1-5df7-49b9-a10f-c5a3712b3e5f","originalAuthorName":"沈强"},{"authorName":"张联盟","id":"92621e40-75c0-45ad-ab9b-9601a90e05d6","originalAuthorName":"张联盟"}],"doi":"","fpage":"920","id":"4842b116-1626-43a8-a36c-685e1d945d54","issue":"4","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"d14be0e5-d447-46f1-b691-7e5d7d7e4043","keyword":"BaTi2O5薄膜","originalKeyword":"BaTi2O5薄膜"},{"id":"edd55056-df82-466c-bd29-6f7ebacb1788","keyword":"b轴取向","originalKeyword":"b轴取向"},{"id":"c3ce421c-cd68-4d7c-b3ae-f996af923c24","keyword":"脉冲激光沉积","originalKeyword":"脉冲激光沉积"},{"id":"cc82022b-1c45-4cd3-b70c-58fe650abd80","keyword":"衬底温度","originalKeyword":"衬底温度"},{"id":"736f25f9-2424-4d28-a9ec-4854c42be371","keyword":"介电性能","originalKeyword":"介电性能"}],"language":"zh","publisherId":"rgjtxb98200904025","title":"MgO(100)衬底上生长BaTi2O5薄膜及其性能研究","volume":"38","year":"2009"},{"abstractinfo":"利用脉冲激光沉积(PLD)技术,在Si(100)衬底上制得了导电氧化铱(IrO2)薄膜.讨论了沉积参数(O2分压、衬底温度)对IrO2薄膜的结构、表面形貌和导电性的影响.结果表明:20 Pa为最佳O2分压、400℃～500℃为适宜的沉积温度,此条件下制得的IrO2薄膜结晶完整,组织均匀、形状一致,排列致密,其最低电阻率约为42μΩ·cm.","authors":[{"authorName":"夏明祥","id":"1ff3ae18-b98a-4755-ad7f-a350934609c6","originalAuthorName":"夏明祥"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">传</span><span style=\"color:red\">彬</span>","id":"77e662fa-aba8-4654-8d60-411a12fd901c","originalAuthorName":"王传彬"},{"authorName":"公衍生","id":"5a0f1543-9a36-41cd-b40d-667a527ca674","originalAuthorName":"公衍生"},{"authorName":"沈强","id":"c63aed40-292f-46e1-9f0a-a1e25d14b60c","originalAuthorName":"沈强"},{"authorName":"张联盟","id":"427389c4-f33c-4982-ba82-2301a98867ee","originalAuthorName":"张联盟"}],"doi":"","fpage":"820","id":"5828d6d5-519b-4c27-b1ec-9328e0658d1c","issue":"5","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"c7e8765a-2fe8-454f-ab4c-1278f30aaa94","keyword":"氧化铱薄膜","originalKeyword":"氧化铱薄膜"},{"id":"df8e528e-6132-4667-8aeb-22b2ef3257b2","keyword":"脉冲激光沉积","originalKeyword":"脉冲激光沉积"},{"id":"14febc88-4c52-451f-b36b-c833b74fc209","keyword":"电阻率","originalKeyword":"电阻率"}],"language":"zh","publisherId":"xyjsclygc200605037","title":"脉冲激光沉积技术制备IrO2薄膜的研究","volume":"35","year":"2006"},{"abstractinfo":"对钛合金(TC4)与无氧纯铜(OFC)异种金属在真空条件下进行直接扩散焊接,可形成良好的TC4/OFC焊接接头.测最其焊接强度及进行微区分析的结果表明,随着温度升高,焊接接头的抗拉强度先升高后下降,最佳焊接工艺参数为:焊接温度800℃,保温时间30 min,焊接压力5 MPa.在TC4/OFC焊接接头的界面上形成了元素成分逐渐变化的互扩散层.由元素分析和断口的XRD分析结果可以看出,界面处生成的物相有Cu3Ti2、Cu4Ti3、CuTi、Cu4Ti等金属间化合物,断口的形貌表明接头断裂主要发生在接头的金属间化合物弱结合处,结合处的孔洞与铜钛金属间化合物的种类,厚度决定了TC4/OFC直接扩散焊接接头的强度.","authors":[{"authorName":"苏小鹏","id":"73ab69a6-0728-4141-80c7-510ff7353e77","originalAuthorName":"苏小鹏"},{"authorName":"罗国强","id":"25f7939e-056c-430d-ad7b-dccd2c104af0","originalAuthorName":"罗国强"},{"authorName":"沈强","id":"4d2c5f0f-71fe-4e2e-ade2-2752c3743e19","originalAuthorName":"沈强"},{"authorName":"曾浩","id":"a39d3407-4008-4d41-a081-b6d24cfca51a","originalAuthorName":"曾浩"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">传</span><span style=\"color:red\">彬</span>","id":"c9202b33-91b7-4020-bb19-d4460fb48594","originalAuthorName":"王传彬"},{"authorName":"张联盟","id":"1d7894c7-391d-49e1-b3dc-2e53ba5bc541","originalAuthorName":"张联盟"}],"doi":"","fpage":"2044","id":"612007f3-a549-455a-a58c-a7f6214cb8cb","issue":"11","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"73cd7226-1d1f-41a4-80d0-a3e883b9ac37","keyword":"TC4","originalKeyword":"TC4"},{"id":"655b0b62-2e48-4ec3-a06f-3d03ab3c3694","keyword":"无氧铜","originalKeyword":"无氧铜"},{"id":"a16417b2-9bbd-4f4e-a8cd-6e558eeb9c2b","keyword":"金属间化合物","originalKeyword":"金属间化合物"},{"id":"ef168209-d05b-4020-8428-0bc49ea920e5","keyword":"扩散焊接","originalKeyword":"扩散焊接"}],"language":"zh","publisherId":"xyjsclygc201011036","title":"TC4/OFC真空扩散焊接研究","volume":"39","year":"2010"},{"abstractinfo":"采用Sol-gel法制备出Bi1-xLnxFeO3(BLnF;x=0、0.05、0.10、0.15、0.20;Ln=Eu,Ho和Er)系列粉末,利用XRD分析了其晶格结构.结合容忍因子的变化分析了3种元素掺杂对BiFeO3晶格结构的影响规律,以及掺杂离子半径变化对BiFeO3晶格结构的影响趋势.结果表明,在450～550℃烧结可以得到纯相的BiFeO3粉末,烧结温度过高.容易形成Bi2Fe4O9杂相;掺杂量增加,晶格参数减小;掺杂离子半径减小,晶格参数减小;Eu、Ho和Er元素掺杂量低于0.10时,可以得到纯相的BLnF,掺杂量超过0.10后,晶格结构的稳定性变差,容易形成杂相.","authors":[{"authorName":"郭冬云","id":"d23cb5c4-7456-4223-acd6-698b09fdd955","originalAuthorName":"郭冬云"},{"authorName":"刘长永","id":"1bfc72fa-27fa-4e61-b710-3a73ccce3494","originalAuthorName":"刘长永"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">传</span><span style=\"color:red\">彬</span>","id":"4024fcda-26a3-4cd6-b2fb-b612574a937b","originalAuthorName":"王传彬"},{"authorName":"沈强","id":"bcf4cfa3-ff39-42c0-bcfe-ebbd2ddd9dfd","originalAuthorName":"沈强"},{"authorName":"张联盟","id":"03e9ecf6-450b-4349-ae6e-911a1af9ec37","originalAuthorName":"张联盟"}],"doi":"","fpage":"8","id":"63e43b89-2f9d-472c-8976-887f5f73b93c","issue":"14","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"a02a6b47-9b8f-4c6c-8589-154ac05f1863","keyword":"BiFeO3粉末","originalKeyword":"BiFeO3粉末"},{"id":"88a87fbb-9f82-4072-bcca-83e2348ac826","keyword":"Sol-gel法","originalKeyword":"Sol-gel法"},{"id":"0165b862-94e6-4ca5-9ff2-1ff58bd8217b","keyword":"晶格结构","originalKeyword":"晶格结构"},{"id":"4e6ada11-f401-46b3-bb7b-388b9b11033e","keyword":"容忍因子","originalKeyword":"容忍因子"},{"id":"1ba69682-216a-456d-8e0d-4e061275afbb","keyword":"掺杂","originalKeyword":"掺杂"}],"language":"zh","publisherId":"cldb201014003","title":"镧系元素(Eu,Ho和Er)掺杂对BiFeO3粉末晶格结构的影响","volume":"24","year":"2010"},{"abstractinfo":"以Ho为掺杂元素, 采用热压烧结方法制备Bi<sub>4-<em>x</em></sub>Ho<em><sub>x</sub></em>Ti<sub>3</sub>O<sub>12</sub>陶瓷, 重点研究了Ho掺杂量对其物相组成、致密度、微观结构和铁电性能的影响. 首先以Bi<sub>2</sub>O<sub>3</sub>、TiO<sub>2</sub>和Ho<sub>2</sub>O<sub>3</sub>微粉为原料, 利用固相反应在900℃合成出主晶相为Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>的Bi<sub>4-<em>x</em></sub>Ho<em><sub>x</sub></em>Ti<sub>3</sub>O<sub>12</sub>(<em>x</em>=0~0.8)粉体; 然后, 将合成粉体在850℃、30 MPa条件下热压烧结, 当Ho掺杂量<em>x</em>=0~0.4得到了物相单一、整体致密(&gt;99%)的Bi<sub>4-<em>x</em></sub>Ho<sub><em>x</em></sub>Ti<sub>3</sub>O<sub>12</sub>陶瓷. 随Ho掺杂量的增加, Bi<sub>4-<em>x</em></sub>Ho<em><sub>x</sub></em>Ti<sub>3</sub>O<sub>12</sub>陶瓷的剩余极化强度呈现先增大后减小的趋势, 主要与氧空位浓度和不同掺杂浓度引起的掺杂位置的不同有关. 在Ho掺杂量<em>x</em>=0.4时, 其剩余极化强度最大(2<em>P</em><sub>r</sub>=13.92 &mu;C/cm<sup>2</sup>), 远大于未掺杂的Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>陶瓷, 说明适量Ho掺杂能有效改善其铁电性能.","authors":[{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">传</span><span style=\"color:red\">彬</span>","id":"99010c84-2207-4071-9609-997e6d3a83b1","originalAuthorName":"王传彬"},{"authorName":"傅力","id":"1e65744d-3b63-45a9-8b8a-7610f2501952","originalAuthorName":"傅力"},{"authorName":"沈强","id":"b1d1c043-f315-4fdc-a794-4a627bef86e1","originalAuthorName":"沈强"},{"authorName":"张联盟","id":"d5284850-e22f-4b40-90fd-c1733fde73d9","originalAuthorName":"张联盟"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2012.11466","fpage":"721","id":"71b49581-3147-425a-b682-9d290ef26920","issue":"7","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"f1336b0c-7341-4262-b4a9-af0f462137dd","keyword":"Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>铁电陶瓷; Ho掺杂; 固相反应; 热压烧结; 铁电性能","originalKeyword":"Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>铁电陶瓷; Ho掺杂; 固相反应; 热压烧结; 铁电性能"}],"language":"zh","publisherId":"1000-324X_2012_7_14","title":"Ho掺杂对Bi<sub>4-<em>x</em></sub>Ho<em><sub>x</sub></em>Ti<sub>3</sub>O<sub>12</sub>陶瓷结构与铁电性能的影响","volume":"27","year":"2012"},{"abstractinfo":"以高纯的单质硼粉和石墨粉为原料,采用放电等离子烧结(Spark Plasma Sintering,SPS)技术,得到了一系列不同化学计量比的硼-碳陶瓷材料.用X射线衍射分析了该系列材料的物相组成,用化学分析法确定了材料的化学计量比,用透射电镜观察了材料的显微结构.结果表明:该系列硼-碳陶瓷的相对致密度均大于90%,具有细晶粒结构(晶粒大小在1 μm左右),由作为主相的碳化硼相(B_(13)C_2)与不同含量的石墨相所组成,并且石墨相含量随原料中硼碳比的增加而减小.化学分析结果显示,随原料中硼碳比的增加,烧结体中的硼碳化学计量比逐渐偏离理论曲线,根据此结果可拟合得到控制烧结体中硼碳比的经验曲线.","authors":[{"authorName":"章嵩","id":"6b139eec-76a1-4d2d-899a-3adfa988a17a","originalAuthorName":"章嵩"},{"authorName":"陈刚","id":"e20883ff-5903-4381-a4be-bfa86569c2b9","originalAuthorName":"陈刚"},{"authorName":"<span style=\"color:red\">王</span><span style=\"color:red\">传</span><span style=\"color:red\">彬</span>","id":"84eb1773-7172-4428-9d52-bc25eb2adbf1","originalAuthorName":"王传彬"},{"authorName":"沈强","id":"01537a7a-6225-4559-b829-9600f0794e41","originalAuthorName":"沈强"},{"authorName":"张联盟","id":"85e3045e-91c0-4904-ba3f-8f5bf8b3868e","originalAuthorName":"张联盟"}],"doi":"","fpage":"1007","id":"720e8d10-238e-4973-b8e3-c64deb5ea014","issue":"z2","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"97da6367-7fcf-46bc-ae79-6da528349c01","keyword":"放电等离子烧结(SPS)","originalKeyword":"放电等离子烧结(SPS)"},{"id":"784699c2-b4ef-4ed5-b832-c18c2aa32677","keyword":"硼-碳陶瓷","originalKeyword":"硼-碳陶瓷"},{"id":"007956f6-8f0f-4155-982b-ff336918bb73","keyword":"化学计量比","originalKeyword":"化学计量比"}],"language":"zh","publisherId":"xyjsclygc2009z2268","title":"SPS反应烧结不同化学计量比硼-碳陶瓷","volume":"38","year":"2009"}],"totalpage":26,"totalrecord":253}