{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"通过磁控溅射沉积TiN/Ag金属化层作为Cu焊盘的保护层,非晶态的TiN膜作为阻挡层,阻止Cu原子的向外扩散;选择能够与Au丝形成固溶体的Ag薄膜作为键合层,提高超声键合性能.超声键合性能测试和抗氧化性能测试表明,TiN/Ag金属化层结构作为Cu焊盘保护层,具有较好的键合能力,其键合能力和焊点剪切强度在20-180℃的温度范围内随着温度的升高而升高,在180℃时获得了100%的键合能力,剪切断裂发生在Au球与TiN/Ag键合面.TiN/Ag金属化层较相同厚度的Ag膜具有更强的抗氧化性能,原因在于非晶态TiN层对Cu原子的扩散起到了很好的阻挡作用.","authors":[{"authorName":"田艳红","id":"c1615fc8-f802-45ae-b394-82ea16a8f275","originalAuthorName":"田艳红"},{"authorName":"王春青","id":"23a47cb4-4329-4178-ad7c-9016d4417d98","originalAuthorName":"王春青"},{"authorName":"赵少伟","id":"779404de-7e44-4748-829c-c652c3d95401","originalAuthorName":"赵少伟"}],"doi":"10.3724/SP.J.1037.2009.00807","fpage":"618","id":"232144dd-901b-409d-b6ae-448e5ebe89ad","issue":"5","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"0852fcf0-c886-4159-b978-cd98de3f0424","keyword":"Cu互连","originalKeyword":"Cu互连"},{"id":"e6504383-7d57-414b-b750-d127a1f2fe0a","keyword":"金属化层","originalKeyword":"金属化层"},{"id":"24d49a91-b8e1-425e-b0cd-ed79b4d6d3b6","keyword":"超声键合性能","originalKeyword":"超声键合性能"},{"id":"c96c61b7-48d5-440e-903f-5d01d133971a","keyword":"抗氧化性能","originalKeyword":"抗氧化性能"}],"language":"zh","publisherId":"jsxb201005016","title":"Cu焊盘TiN/Ag金属化层超声键合性能及抗氧化性能","volume":"46","year":"2010"},{"abstractinfo":"通过磁控溅射沉积TiN/Ag金属化层作为Cu焊盘的保护层, 非晶态的TiN膜作为阻挡层, 阻止Cu原子的向外扩散; 选择能够与Au丝形成固溶体的Ag薄膜作为键合层, 提高超声键合性能. 超声键合性能测试和抗氧化性能测试表明, TiN/Ag金属化层结构作为Cu焊盘保护层, 具有较好的键合能力, 其键合能力和焊点剪切强度在20-180 ℃的温度范围内随着温度的升高而升高, 在180 ℃时获得了100\\%的键合能力, 剪切断裂发生在Au球与TiN/Ag键合面. TiN/Ag金属化层较相同厚度的Ag膜具有更强的抗氧化性能, 原因在于非晶态TiN层对Cu原子的扩散起到了很好的阻挡作用.","authors":[{"authorName":"田艳红王春青赵少伟","id":"8169f1ef-bf49-47f3-9afa-8912efd808df","originalAuthorName":"田艳红王春青赵少伟"}],"categoryName":"|","doi":"DOI: 10.3724/SP.J.1037.2009.00807","fpage":"618","id":"86ce7b36-6a45-497d-b69f-18f7e0f93a76","issue":"5","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"82d9d85a-4ad1-44fb-b62b-add245f0003e","keyword":"Cu互连","originalKeyword":"Cu互连"},{"id":"23236839-b147-470d-a1e1-18404d3a491b","keyword":"metallization","originalKeyword":"metallization"},{"id":"381240b3-fdb5-4ada-818c-de5e7eba1a25","keyword":"ultrasonic bondability","originalKeyword":"ultrasonic bondability"},{"id":"ec6a66b6-a88d-47a6-9ba2-ca1f0fde8eb2","keyword":"antioxidation property","originalKeyword":"antioxidation property"}],"language":"zh","publisherId":"0412-1961_2010_5_3","title":"Cu焊盘TiN/Ag金属化层超声键合性能及抗氧化性能","volume":"46","year":"2010"},{"abstractinfo":"为了研究超声键合中在超声能量作用下金属间形成键合界面而构成键合力的机理,确定金属间吸收的超声能量与形成的界面质量的关系,在超声楔焊键合试验中,对Al-Ni楔焊通过改变焊接参数而获得完全键合和半键合的界面,并对其界面特征进行扫描电镜测试分析;同时,利用示波器采集超声键合机焊接时的电信号,分析了PZT驱动的输入阻抗和功率特性,并与界面质量对比.研究结果表明:超声键合而形成的Al-Ni界面为中央未键合的椭圆界面;相同参数条件下,一焊输入阻抗和吸收功率大于二焊,一焊的界面质量也高于二焊.","authors":[{"authorName":"陈新","id":"65deef29-610a-4b4b-86bf-1395054f55f3","originalAuthorName":"陈新"},{"authorName":"李军辉","id":"6c329394-4d45-48f3-a6a7-c77f62e90ca1","originalAuthorName":"李军辉"},{"authorName":"钟泽辉","id":"cfeb61c4-6ea9-4303-a52f-7dd8562119e2","originalAuthorName":"钟泽辉"}],"doi":"10.3969/j.issn.1005-0299.2006.04.021","fpage":"416","id":"29227fa2-08ff-4a3e-a6df-e0fc08632ff6","issue":"4","journal":{"abbrevTitle":"CLKXYGY","coverImgSrc":"journal/img/cover/CLKXYGY.jpg","id":"14","issnPpub":"1005-0299","publisherId":"CLKXYGY","title":"材料科学与工艺"},"keywords":[{"id":"dbb3b79c-940e-490e-9bd7-31e09ea53485","keyword":"超声键合","originalKeyword":"超声键合"},{"id":"5e30f8c0-9c96-4158-ac7f-9ba9d81e7242","keyword":"界面特征","originalKeyword":"界面特征"},{"id":"0345fa02-efc0-415e-865b-c08332f386e0","keyword":"功率特性","originalKeyword":"功率特性"}],"language":"zh","publisherId":"clkxygy200604021","title":"Al-Ni超声楔焊中输入功率与界面键合的特征分析","volume":"14","year":"2006"},{"abstractinfo":"为了提高铜线性能及其键合质量,采用拉力-剪切力测试仪、扫描电镜等研究了不同力学性能铜线及相应的键合参数对其键合质量的影响,分析了不同伸长率和拉断力、铜线表面缺陷、超声功率和键合压力对铜线键合质量的作用机制.结果表明:伸长率过小和拉断力过大会造成焊点颈部产生微裂纹,从而导致焊点的拉力和球剪切力偏低;表面存在缺陷的铜线其颈部经过反复塑性大变形会造成铜线表面晶粒和污染物脱落而出现短路和球颈部断裂;键合过程中键合压力过大能够引起的焊盘变形,同时较大的接触应力引起铝层溢出;过大的超声功率使键合区域变形严重产生明显的裂纹和引起键合附近区域严重的应力集中,致使器件使用过程中产生微裂纹而降低器件的使用寿命.","authors":[{"authorName":"曹军","id":"f8456175-5542-4c1e-a8f5-0404f33aefb1","originalAuthorName":"曹军"},{"authorName":"丁雨田","id":"55f8fc7b-c0bd-4cee-ba13-d34c0f56615a","originalAuthorName":"丁雨田"},{"authorName":"郭廷彪","id":"1816cb6f-20d3-4f5d-a240-a2e08db3dc0b","originalAuthorName":"郭廷彪"}],"doi":"","fpage":"76","id":"6a548419-b197-4a3c-ac0d-6fbaa0469001","issue":"4","journal":{"abbrevTitle":"CLKXYGY","coverImgSrc":"journal/img/cover/CLKXYGY.jpg","id":"14","issnPpub":"1005-0299","publisherId":"CLKXYGY","title":"材料科学与工艺"},"keywords":[{"id":"065496eb-ce17-4f62-835d-c067a311010b","keyword":"伸长率","originalKeyword":"伸长率"},{"id":"eb60d942-7edb-4dd3-9c62-a37938974cd4","keyword":"拉断力","originalKeyword":"拉断力"},{"id":"712f7f81-52e3-4853-b6eb-3310d27c7252","keyword":"表面","originalKeyword":"表面"},{"id":"ea3451e8-51ce-4280-92dc-0bd9f939e461","keyword":"超声功率","originalKeyword":"超声功率"},{"id":"250dc18d-be22-4149-8aeb-05d89ac04399","keyword":"键合压力","originalKeyword":"键合压力"}],"language":"zh","publisherId":"clkxygy201204014","title":"铜线性能及键合参数对键合质量的影响","volume":"20","year":"2012"},{"abstractinfo":"针对聚合物多层微流控芯片键合,采用热辅助超声波键合方法实现了4层微流控芯片的键合,搭建了多界面温度测试装置,采用埋置热电偶的方法测试了三个被封接界面的温度场,研究了单独超声波作用和热辅助超声波键合法中各界面的温度并进行了比对.温度测试实验结果表明,在顶层热辅助温度70℃、6μm振幅、30kHz频率、100N超声波焊接压力和25s超声波作用时间下,基于热辅助的多层超声波键合方法可以使各键合界面的温度基本一致,从而实现多层微流控器件的多个界面键合质量一致.本文的研究为聚合物微流控器件的超声波多层键合机理研究提供了有益借鉴.","authors":[{"authorName":"罗怡","id":"9c527c72-e479-460d-ad71-88ea4379c9b6","originalAuthorName":"罗怡"},{"authorName":"何盛强","id":"a77be989-5136-47ee-a190-7c1cdbc1d962","originalAuthorName":"何盛强"},{"authorName":"王晓东","id":"383bec6f-ae95-4334-a567-0949ba5f657f","originalAuthorName":"王晓东"}],"doi":"","fpage":"88","id":"ebf879fb-dc5f-4c32-9284-d31eb7884d89","issue":"1","journal":{"abbrevTitle":"CLKXYGY","coverImgSrc":"journal/img/cover/CLKXYGY.jpg","id":"14","issnPpub":"1005-0299","publisherId":"CLKXYGY","title":"材料科学与工艺"},"keywords":[{"id":"0ec9ca50-5fe6-4a54-9327-79f7eb3bec7f","keyword":"多层微流控芯片","originalKeyword":"多层微流控芯片"},{"id":"910b0b2e-3745-4219-ba3c-4d739163ff7b","keyword":"热辅助超声波键合","originalKeyword":"热辅助超声波键合"},{"id":"3185d410-6fc9-4abf-b30f-643ed21c4a29","keyword":"界面温度","originalKeyword":"界面温度"}],"language":"zh","publisherId":"clkxygy201201018","title":"聚合物多层微流控芯片超声波键合界面温度研究","volume":"20","year":"2012"},{"abstractinfo":"介绍了硅片的直接键合工艺、键合机理、键合质量评价方法以及键合技术目前的研究和应用状况等.","authors":[{"authorName":"王敬","id":"2877fd15-a710-4d31-aab9-ae169cb24910","originalAuthorName":"王敬"},{"authorName":"屠海令","id":"367b09ba-1f66-4aeb-9194-057e18d9658e","originalAuthorName":"屠海令"},{"authorName":"刘安生","id":"1865ffb5-3eef-4b75-b887-2fe6a22a7043","originalAuthorName":"刘安生"},{"authorName":"张椿","id":"a5db59fc-6d76-49d7-bf03-208be7cef4e2","originalAuthorName":"张椿"},{"authorName":"周旗钢","id":"f0901821-d5e4-4109-993e-2923809b41a3","originalAuthorName":"周旗钢"},{"authorName":"朱悟新","id":"f17b6813-08cd-4989-bc03-317866bf6191","originalAuthorName":"朱悟新"}],"doi":"10.3969/j.issn.0258-7076.1998.05.013","fpage":"380","id":"64d64907-d45d-4aa4-b761-fd0044a537b6","issue":"5","journal":{"abbrevTitle":"XYJS","coverImgSrc":"journal/img/cover/XYJS.jpg","id":"67","issnPpub":"0258-7076","publisherId":"XYJS","title":"稀有金属"},"keywords":[{"id":"43f3c8a6-994e-42ff-a88d-1502a3b2eb72","keyword":"硅片","originalKeyword":"硅片"},{"id":"0c39ddd5-c112-43e6-ad8c-a803e821cde0","keyword":"硅片键合","originalKeyword":"硅片键合"},{"id":"74cd3dc9-e4a6-45ae-8778-3e07d8137e21","keyword":"直接键合","originalKeyword":"直接键合"}],"language":"zh","publisherId":"xyjs199805013","title":"硅片的直接键合","volume":"22","year":"1998"},{"abstractinfo":"Al/Cu键合界面金属间化合物的形成是导致微电子器件失效的重要因素之一,总结了微电子器件生产和使用过程中Al/Cu键合界面金属间化合物的生长规律,分析了Al/Cu键合系统的失效机制.热超声键合过程中,Al焊盘上氧化铝层的破裂使金属间化合物的形成成为可能,键合及器件使用过程中,金属间化合物和柯肯德尔空洞的形成和长大最终导致键合失效.采用在Al焊盘上镀覆Ti过渡层的方法,可有效降低键合系统中Cu原子的扩散速度,抑制金属间化合物的生长,从而提高电子元器件的可靠性.","authors":[{"authorName":"岳安娜","id":"05b3f54f-9717-4bc2-bb53-e15e98d52a5d","originalAuthorName":"岳安娜"},{"authorName":"彭坤","id":"41e6d5d7-3eb6-4f91-8b1f-2b71c700a6b4","originalAuthorName":"彭坤"},{"authorName":"周灵平","id":"f4982080-87f6-4ca2-9fe1-f3c683752d7c","originalAuthorName":"周灵平"},{"authorName":"朱家俊","id":"8e39b89a-de4e-4a35-9775-6f56161233ee","originalAuthorName":"朱家俊"},{"authorName":"李德意","id":"554c5847-34fe-4030-8c72-f6304ce97ca0","originalAuthorName":"李德意"}],"doi":"","fpage":"117","id":"769a7714-3ead-4881-b3a8-ede9b18d59da","issue":"17","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"7e6a589f-8615-4ae4-851f-746fd9cc14e1","keyword":"Al/Cu键合","originalKeyword":"Al/Cu键合"},{"id":"4e1526d6-08c7-49f9-bc9f-378382cfdfd1","keyword":"金属间化合物","originalKeyword":"金属间化合物"},{"id":"92f6e559-7b0e-46c9-8fbb-99d94b638b9b","keyword":"扩散","originalKeyword":"扩散"},{"id":"5a96fbd0-838b-4265-aa00-00c13ca8e194","keyword":"Ti过渡层","originalKeyword":"Ti过渡层"}],"language":"zh","publisherId":"cldb201317026","title":"Al/Cu键合系统中金属间化合物的形成规律及防止方法","volume":"27","year":"2013"},{"abstractinfo":"利用扫描电镜、透射电镜、聚焦离子束、强度测试仪研究了键合Cu线无卤直接镀Pd工艺及镀Pd键合Cu线性能,分析了热处理温度对直接镀Pd键合Cu线钯层界面结合强度、镀Pd键合Cu线拉断力、伸长率及钯层厚度的影响.结果表明:无卤直接镀Pd工艺可获得镀层均匀的镀Pd键合Cu线;随热处理温度增加,钯层结合强度增加,热处理温度300℃时,镀层与基体结合强度较低;热处理温度450℃时,直接镀Pd键合Cu线钯层与基体Cu之间产生了Pd3Cu5金属间化合物,钯层与铜线基体结合强度较好;热处理温度450℃时,直接镀钯铜线具有优良的力学性能适当的钯层厚度,镀Pd键合Cu线拉断力为0.096 N,伸长率为14.3%,钯层厚度为78 nm;热处理温度500℃时镀Pd键合Cu线晶粒粗大,力学性能降低,拉断力为0.073 N,伸长率为11.6%.","authors":[{"authorName":"曹军","id":"1c904307-6328-4ff3-b80a-4b9517179a1b","originalAuthorName":"曹军"},{"authorName":"范俊玲","id":"97346261-7790-438b-a570-2f197ed2fbe6","originalAuthorName":"范俊玲"},{"authorName":"高文斌","id":"738edafc-133b-4723-b2d6-a77bf54cb5e1","originalAuthorName":"高文斌"},{"authorName":"刘志强","id":"45fd77c7-0ed4-43f2-8c19-e45435056a45","originalAuthorName":"刘志强"}],"doi":"","fpage":"171","id":"273799c2-5c5a-4ec4-aea8-e3c9dcca04e0","issue":"3","journal":{"abbrevTitle":"CLRCLXB","coverImgSrc":"journal/img/cover/CLRCLXB.jpg","id":"15","issnPpub":"1009-6264","publisherId":"CLRCLXB","title":"材料热处理学报"},"keywords":[{"id":"31c6d360-bb1a-4579-994d-62d62d8c8539","keyword":"直接镀钯","originalKeyword":"直接镀钯"},{"id":"dca1dd63-9cbd-43b9-999e-4e4eb4678701","keyword":"热处理","originalKeyword":"热处理"},{"id":"8752ed19-8924-40cc-ada4-77ec8fd97c52","keyword":"结合强度","originalKeyword":"结合强度"},{"id":"f15a29cf-0b16-4ed2-ab40-decebc983728","keyword":"Pd厚度","originalKeyword":"Pd厚度"},{"id":"8100e938-3838-4cdd-b0c7-d0f7671ea9f9","keyword":"力学性能","originalKeyword":"力学性能"}],"language":"zh","publisherId":"jsrclxb201603030","title":"热处理对直接镀Pd键合Cu线性能的影响","volume":"37","year":"2016"},{"abstractinfo":"以3种具有不同比表面积和孔结构的介孔硅胶为基质,采用2种不同的键合方法将β-环糊精引入到介孔材料体系中,结果表明,采用先将偶联剂与β-环糊精反应再在较大体积的反应溶剂中与硅胶键合的方法可得到较大的键合量. 考察了键合前后的介孔硅胶的比表面积和孔结构参数,结果表明β-环糊精的引入使硅胶的比表面积、孔径和孔容均有较明显的下降,孔结构发生变化. 具有最大比表面积的介孔硅胶MS1经适当方法键合改性后,可获得最高的表面β-环糊精修饰量(1.36 μmol/m2),表现出对酚类化合物的强吸附性能,尤其是对2,4-二硝基酚吸附量达24.81 mg/g. 从不同的介孔硅胶基质获得的β-环糊精键合材料对于不同的酚类化合物表现出不同的选择性,体现了介孔材料在引入β-环糊精进行键合时由于孔结构的不同而导致的差异. 而有序或无序孔结构对于材料的吸附性能未发现显著影响.","authors":[{"authorName":"范毅","id":"61deb15d-f109-4036-bf3e-261cff2a64f0","originalAuthorName":"范毅"},{"authorName":"冯钰锜","id":"e36c8648-43e8-473a-ac89-58c99c06cc8b","originalAuthorName":"冯钰锜"},{"authorName":"达世禄","id":"4a5528bc-521b-4dc6-aa45-1f7afbf21baa","originalAuthorName":"达世禄"},{"authorName":"施治国","id":"da23b519-0fc2-43c4-812e-73569b3e70b6","originalAuthorName":"施治国"},{"authorName":"徐丽","id":"ec58cb91-da5b-40ac-a193-c0df5bb44f0c","originalAuthorName":"徐丽"}],"doi":"10.3969/j.issn.1000-0518.2004.09.003","fpage":"878","id":"536df874-4786-4b2a-9dca-1712d29c73a5","issue":"9","journal":{"abbrevTitle":"YYHX","coverImgSrc":"journal/img/cover/YYHX.jpg","id":"73","issnPpub":"1000-0518","publisherId":"YYHX","title":"应用化学"},"keywords":[{"id":"b03d9c75-66d6-486f-9092-61707a2b981c","keyword":"介孔硅胶","originalKeyword":"介孔硅胶"},{"id":"82ac3cc0-577c-4e23-b287-36a50ad43ff5","keyword":"β-环糊精","originalKeyword":"β-环糊精"},{"id":"8fe7c479-7b9a-4661-b8b2-033f5e24a1ec","keyword":"键合改性","originalKeyword":"键合改性"},{"id":"f9dbe86d-1746-462b-82fb-5093701b1aa2","keyword":"吸附性能","originalKeyword":"吸附性能"},{"id":"02e461b6-1b5d-470d-bbdf-6025f7bca31f","keyword":"酚类化合物","originalKeyword":"酚类化合物"}],"language":"zh","publisherId":"yyhx200409003","title":"β-环糊精键合改性介孔硅胶的表征和吸附性能评价","volume":"21","year":"2004"},{"abstractinfo":"将硅烷偶联剂γ-(2,3-环氧丙氧)丙基三甲氧基硅烷与十八酸反应,再键合到硅胶整体柱上,得到了酯型十八烷基键合固定相,并用红外光谱、元素分析对其进行了表征.在以甲醇-水为流动相的反相色谱条件下分离了苯、联苯和蒽的混合样品,评价了该整体柱的色谱性能,考察了该整体柱适用的pH范围,以及柱压降、柱效与流速的关系.结果表明,该硅胶整体柱键合效果良好,具有较好的反相色谱性能,且在pH=2~8时稳定性好,柱压降、柱效受流速影响较小,可有效地用于化合物的快速分离分析.","authors":[{"authorName":"王利娟","id":"145df584-5ad4-4977-b772-8866a39a6a48","originalAuthorName":"王利娟"},{"authorName":"杨更亮","id":"d9bf62f5-67eb-482e-8ffe-a1433f26161a","originalAuthorName":"杨更亮"},{"authorName":"李煦","id":"d7ce8725-ae21-499e-ac01-2a44cfb59af2","originalAuthorName":"李煦"},{"authorName":"李晓瑜","id":"63943d55-9528-4ec1-a59c-dec814386f96","originalAuthorName":"李晓瑜"},{"authorName":"尹俊发","id":"babf29b7-9e14-4ba2-b3e8-6c6c7eaf879e","originalAuthorName":"尹俊发"},{"authorName":"李志伟","id":"001c28b3-d7ae-4733-8953-93e27463bb82","originalAuthorName":"李志伟"},{"authorName":"高文惠","id":"a13bdff6-42ff-4532-b7fc-4436ab6eeca5","originalAuthorName":"高文惠"},{"authorName":"杨静","id":"56fee71c-213d-4daa-b94d-987619dbb54b","originalAuthorName":"杨静"},{"authorName":"陈义","id":"72f132c2-2b2a-4cc0-b7d5-20ecf2f58e10","originalAuthorName":"陈义"}],"doi":"10.3321/j.issn:1000-8713.2005.05.014","fpage":"504","id":"76ee2a98-9a31-4dda-82aa-076efdc459a2","issue":"5","journal":{"abbrevTitle":"SP","coverImgSrc":"journal/img/cover/SP.jpg","id":"58","issnPpub":"1000-8713","publisherId":"SP","title":"色谱 "},"keywords":[{"id":"e7d9c20c-3444-4c6a-b6ef-1561f9301bf4","keyword":"硅烷偶联剂","originalKeyword":"硅烷偶联剂"},{"id":"358ce620-a0a2-4610-bd0d-d02df106e64a","keyword":"酯型十八烷基键合硅胶整体柱","originalKeyword":"酯型十八烷基键合硅胶整体柱"},{"id":"0c47c365-5650-497d-bf03-012070802207","keyword":"反相液相色谱","originalKeyword":"反相液相色谱"}],"language":"zh","publisherId":"sp200505014","title":"酯型十八烷基键合硅胶整体柱的制备、表征及性能评价","volume":"23","year":"2005"}],"totalpage":9105,"totalrecord":91047}