{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"总结了我国在<span style=\"color:red\">MOCVD</span>化合物<span style=\"color:red\">半导体</span>材料方面的最新进展, 重点为<span style=\"color:red\">MOCVD</span>化学、Ⅲ-Ⅴ族和Ⅱ-Ⅵ族<span style=\"color:red\">半导体</span>材料及其在光电和微波<span style=\"color:red\">器件</span>中的应用. 为进一步发展我国的<span style=\"color:red\">MOCVD</span>材料提出了若干建议.","authors":[{"authorName":"彭瑞伍","id":"b9ce97dd-cf57-41ce-a70a-549a880c2fa6","originalAuthorName":"彭瑞伍"},{"authorName":"胡金波","id":"1950856f-3489-409d-803e-a363fa0e3444","originalAuthorName":"胡金波"}],"doi":"10.3969/j.issn.0258-7076.1998.03.002","fpage":"164","id":"3cbf8022-6c08-4cb1-b534-a9ae0d83769a","issue":"3","journal":{"abbrevTitle":"XYJS","coverImgSrc":"journal/img/cover/XYJS.jpg","id":"67","issnPpub":"0258-7076","publisherId":"XYJS","title":"稀有金属"},"keywords":[{"id":"eaf9835d-ed48-428e-9ccb-a17c63312c48","keyword":"金属有机物化学气相沉积(<span style=\"color:red\">MOCVD</span>)","originalKeyword":"金属有机物化学气相沉积(MOCVD)"},{"id":"da0fe8cd-72f9-4428-a0a8-531fbee8e9e4","keyword":"<span style=\"color:red\">MOCVD</span><span style=\"color:red\">半导体</span>材料","originalKeyword":"MOCVD半导体材料"},{"id":"871cfe9c-f149-439d-9386-27ffa5991229","keyword":"<span style=\"color:red\">MOCVD</span><span style=\"color:red\">半导体</span><span style=\"color:red\">器件</span>","originalKeyword":"MOCVD半导体器件"}],"language":"zh","publisherId":"xyjs199803002","title":"<span style=\"color:red\">MOCVD</span>化合物<span style=\"color:red\">半导体</span>材料及其应用","volume":"22","year":"1998"},{"abstractinfo":"概述了紫外<span style=\"color:red\">半导体</span>电致发光<span style=\"color:red\">器件</span>的发展历史、现状、趋势及其应用,详述了国内外近两年对AlGaN基<span style=\"color:red\">半导体</span>电致发光<span style=\"color:red\">器件</span>的研究进展.","authors":[{"authorName":"岑继文","id":"42a96439-e4db-4744-a273-6e8a64f1bca7","originalAuthorName":"岑继文"},{"authorName":"何明兴","id":"369bae9b-0421-4b35-a7c1-0654c6577914","originalAuthorName":"何明兴"},{"authorName":"李新军","id":"d7b5437b-df6f-4785-84c9-cbfcc87e43a0","originalAuthorName":"李新军"},{"authorName":"王良焱","id":"3d9a6972-e52c-42d2-a35d-48eb021d24f0","originalAuthorName":"王良焱"}],"doi":"","fpage":"90","id":"e009d4b7-5e59-4ddc-ae94-2e87cdf92776","issue":"1","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"3b5fe02c-cd5b-4952-a04e-d20ce3339d6e","keyword":"AlGaN","originalKeyword":"AlGaN"},{"id":"5c2dfa47-1515-4b7a-8b54-5cae7570fcec","keyword":"<span style=\"color:red\">半导体</span>电致发光","originalKeyword":"半导体电致发光"},{"id":"019dea95-2376-4c86-8cda-2ef84c39444c","keyword":"紫外","originalKeyword":"紫外"},{"id":"5b682e68-38fd-4804-ae8e-c3d232fc4188","keyword":"LED","originalKeyword":"LED"}],"language":"zh","publisherId":"cldb200501026","title":"紫外<span style=\"color:red\">半导体</span>电致发光<span style=\"color:red\">器件</span>研究进展","volume":"19","year":"2005"},{"abstractinfo":"应用金属有机化合物气相淀积(<span style=\"color:red\">MOCVD</span>)制备了具有渐变层的<span style=\"color:red\">半导体</span>布拉格反射镜(DBR),分别是抛物线性、线性和突变结构的DBR.三种反射镜结构都设计为8个周期,通过白光反射谱测量突变DBR具有最大反射率.应用原子力显微镜对所制备的DBR表面形貌进行分析.结果表明,相同周期数情况下线性渐变DBR相对于其他两种结构粗糙度最小,具有良好的表面形貌,可以应用于垂直腔面发射激光器的研制.","authors":[{"authorName":"盖红星","id":"f9569968-ed26-4620-8131-68b44778d399","originalAuthorName":"盖红星"},{"authorName":"邓军","id":"6a2fd115-2fe9-4998-8568-4fa0765ce87c","originalAuthorName":"邓军"},{"authorName":"廉鹏","id":"7cb0a235-92d2-42f4-94c9-ff7868d9f3c7","originalAuthorName":"廉鹏"},{"authorName":"俞波","id":"c6087dc9-0f2f-452c-87d0-0ca05cd53735","originalAuthorName":"俞波"},{"authorName":"李建军","id":"b5fd4d92-98ea-4469-8057-344e5a6c845c","originalAuthorName":"李建军"},{"authorName":"韩军","id":"8f2b1558-3f67-4c64-947b-b9cbf6bc770c","originalAuthorName":"韩军"},{"authorName":"陈建新","id":"5c0729d1-76c8-4c8c-ac56-1a2e56f030de","originalAuthorName":"陈建新"},{"authorName":"沈光地","id":"c885ac01-8ebf-4caf-ab16-6557594008a4","originalAuthorName":"沈光地"}],"doi":"10.3969/j.issn.1007-4252.2006.03.009","fpage":"207","id":"971a3ee7-a139-4bbe-8485-cf15d53f56e6","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"2defe529-8ee7-4d98-96c5-ef334f9f01d4","keyword":"布拉格反射镜","originalKeyword":"布拉格反射镜"},{"id":"bc747578-f169-46b0-92e1-b19a0ec8b64e","keyword":"金属有机化合物气相淀积","originalKeyword":"金属有机化合物气相淀积"},{"id":"3cd72bb2-1a51-4e05-9dbf-a085e83d14fc","keyword":"原子力显微镜","originalKeyword":"原子力显微镜"},{"id":"cd9e628b-aee7-41fd-b4ab-174e9a0def8c","keyword":"AlGaAs","originalKeyword":"AlGaAs"}],"language":"zh","publisherId":"gnclyqjxb200603009","title":"具有渐变层<span style=\"color:red\">半导体</span>DBR的<span style=\"color:red\">MOCVD</span>外延制备","volume":"12","year":"2006"},{"abstractinfo":"使用低压<span style=\"color:red\">MOCVD</span>生长应变InGaAs/GaAs 980 nm量子阱.研究了生长温度、生长速度对量子阱光致发光谱(PL)的影响.并将优化后的量子阱生长条件应用于980 nm<span style=\"color:red\">半导体</span>激光器的研制中,获得了直流工作下,阈值电流为19 mA,未镀膜斜率效率为0.6 W/A,输出功率在100 mW的<span style=\"color:red\">器件</span>.","authors":[{"authorName":"俞波","id":"1847f592-cebc-4139-9091-ca1b71d9bea8","originalAuthorName":"俞波"},{"authorName":"盖红星","id":"5becc38f-a341-4ebc-a29a-a1ee71edd40a","originalAuthorName":"盖红星"},{"authorName":"韩军","id":"3775bc2b-5371-4b8b-856a-4e717e491530","originalAuthorName":"韩军"},{"authorName":"邓军","id":"18c61fa4-92d6-48f6-808c-5c3f70f46426","originalAuthorName":"邓军"},{"authorName":"邢艳辉","id":"b2b41d42-550d-43cd-bb81-4ddbf9dac4f4","originalAuthorName":"邢艳辉"},{"authorName":"李建军","id":"b0482a0c-5b68-4b38-b9ed-b9f95109d04a","originalAuthorName":"李建军"},{"authorName":"廉鹏","id":"5c199688-9c3f-49a8-82b8-5c80fc8103d7","originalAuthorName":"廉鹏"},{"authorName":"邹德恕","id":"4dca1659-5671-4960-acef-2b337538c883","originalAuthorName":"邹德恕"},{"authorName":"沈光地","id":"e2b28a45-9a16-4aa8-a2e2-92c150e587f5","originalAuthorName":"沈光地"}],"doi":"10.3969/j.issn.1007-5461.2005.01.015","fpage":"81","id":"d3a3bfbe-15a1-4ea1-a574-1c7442b8b4b7","issue":"1","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报   "},"keywords":[{"id":"6b320bb5-3cfa-4815-9cb1-4c93fdbe1f94","keyword":"光电子学","originalKeyword":"光电子学"},{"id":"c569ff6b-3634-4493-b255-ef39c4512d7a","keyword":"<span style=\"color:red\">半导体</span>激光器","originalKeyword":"半导体激光器"},{"id":"102583dc-393a-4b0e-95db-b983e2355c02","keyword":"应变量子阱","originalKeyword":"应变量子阱"},{"id":"6bee8750-0ba3-4198-8822-0b6b75ff3142","keyword":"金属有机化学气相淀积","originalKeyword":"金属有机化学气相淀积"}],"language":"zh","publisherId":"lzdzxb200501015","title":"应变InGaAs/GaAs量子阱<span style=\"color:red\">MOCVD</span>生长优化及其在980 nm<span style=\"color:red\">半导体</span>激光器中的应用","volume":"22","year":"2005"},{"abstractinfo":"简要介绍了量子结构材料与<span style=\"color:red\">器件</span>中的基本概念,重点介绍了量子结构的定义和量子尺寸效应的能带裁剪工程.以Ⅱ-Ⅵ族化合物<span style=\"color:red\">半导体</span>为例,介绍了量子尺寸效应对于激子束缚能的影响.以此为基础,综述了Ⅱ-Ⅵ族化合物<span style=\"color:red\">半导体</span>量子阱、量子点等量子结构材料以及量子结构<span style=\"color:red\">器件</span>在光电探测、发光<span style=\"color:red\">器件</span>与太阳能电池领域的研究现状,并总结了Ⅱ-Ⅵ族化合物<span style=\"color:red\">半导体</span>量子结构材料与<span style=\"color:red\">器件</span>的发展趋势.","authors":[{"authorName":"郝建伟","id":"f295508d-dae0-43e2-84db-f5543201d3ab","originalAuthorName":"郝建伟"},{"authorName":"查钢强","id":"8e340af5-c65a-4d46-9ee1-8745fb10d9cd","originalAuthorName":"查钢强"},{"authorName":"介万奇","id":"240cd3a8-0830-45a1-881e-8ebc908c5a15","originalAuthorName":"介万奇"}],"doi":"10.3969/j.issn.1001-4381.2011.06.018","fpage":"87","id":"80ab47b9-d510-4c1a-b6af-f2240fa62448","issue":"6","journal":{"abbrevTitle":"CLGC","coverImgSrc":"journal/img/cover/CLGC.jpg","id":"9","issnPpub":"1001-4381","publisherId":"CLGC","title":"材料工程"},"keywords":[{"id":"0d916c4f-e8ee-4be3-9aca-4ff90efc6c9b","keyword":"Ⅱ-Ⅵ族化合物<span style=\"color:red\">半导体</span>","originalKeyword":"Ⅱ-Ⅵ族化合物半导体"},{"id":"22634fb7-d490-4f0e-927e-65da9a71d799","keyword":"量子结构","originalKeyword":"量子结构"},{"id":"8ba0964f-f6f3-4558-a7d1-33375e55d0d5","keyword":"激子效应","originalKeyword":"激子效应"},{"id":"8c9490fe-f08b-4781-8f54-5dda5a4d46aa","keyword":"量子尺寸效应","originalKeyword":"量子尺寸效应"}],"language":"zh","publisherId":"clgc201106018","title":"Ⅱ-Ⅵ族化合物<span style=\"color:red\">半导体</span>量子结构材料和<span style=\"color:red\">器件</span>的研究与发展","volume":"","year":"2011"},{"abstractinfo":"对无机和有机电致变色材料及其在电致变色<span style=\"color:red\">器件</span>中的应用做了详尽地分析.重点介绍了近年来广泛研究的一种变色子修饰<span style=\"color:red\">半导体</span>电极的复合型电致变色<span style=\"color:red\">器件</span>.通过对这种有机-无机复合电致变色<span style=\"color:red\">器件</span>结构的剖析,分析了变色机理,展望了这种变色<span style=\"color:red\">器件</span>的发展动向.","authors":[{"authorName":"葛万银","id":"ad41a134-9826-40b9-ad71-bee8ea32c61a","originalAuthorName":"葛万银"},{"authorName":"李永祥","id":"3e9c6cf8-7a8d-4e43-8081-652b27cf4089","originalAuthorName":"李永祥"},{"authorName":"于晓峰","id":"f298a511-cc9c-412a-b37a-d9d9f56bad2f","originalAuthorName":"于晓峰"},{"authorName":"杨群保","id":"613ddc3e-3da2-44e1-8a5f-5ff97e8f7bad","originalAuthorName":"杨群保"}],"doi":"","fpage":"108","id":"d7052d59-2bb0-4cdc-956c-230f7283bc27","issue":"11","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"c2b2d138-185d-4b01-9ba4-6ebc587b3aff","keyword":"电致变色","originalKeyword":"电致变色"},{"id":"cbb9081c-eeb9-4ab2-b24f-358d6c43ba8a","keyword":"有机-无机复合","originalKeyword":"有机-无机复合"},{"id":"1e1f9346-397c-40d9-8214-2c1e20166c2e","keyword":"纳米膜材料","originalKeyword":"纳米膜材料"},{"id":"acd12568-c65f-49ee-9bc5-a290a8d3918f","keyword":"平板显示<span style=\"color:red\">器件</span>","originalKeyword":"平板显示器件"}],"language":"zh","publisherId":"cldb200511029","title":"纳米<span style=\"color:red\">半导体</span>电极及有机-无机电致变色<span style=\"color:red\">器件</span>","volume":"19","year":"2005"},{"abstractinfo":"本文评述了<span style=\"color:red\">半导体</span><span style=\"color:red\">器件</span>引线框架材料国内外研究开发的现状,对引线框架材料性能和材料设计进行了分析,并讨论了随着计算机和信息工业的迅猛发展,引线框架材料今后的发展趋势.","authors":[{"authorName":"邬震泰","id":"060909ca-6fdc-4f07-a306-9af570a24ef8","originalAuthorName":"邬震泰"}],"doi":"10.3969/j.issn.1673-2812.2001.03.026","fpage":"127","id":"f6977e18-7c27-4666-a27b-d1e99eaae369","issue":"3","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"055214b7-1439-4ac5-b752-33bb12ffa2e0","keyword":"引线框架材料","originalKeyword":"引线框架材料"},{"id":"1cc13b8d-7af0-4ff6-af9a-7e6be3013d71","keyword":"<span style=\"color:red\">半导体</span><span style=\"color:red\">器件</span>","originalKeyword":"半导体器件"},{"id":"b18d5aa5-f299-4288-b323-e5d8e36bf2ee","keyword":"材料设计","originalKeyword":"材料设计"}],"language":"zh","publisherId":"clkxygc200103026","title":"<span style=\"color:red\">半导体</span><span style=\"color:red\">器件</span>引线框架材料的现状与发展","volume":"19","year":"2001"},{"abstractinfo":"在<span style=\"color:red\">MOCVD</span>质量控制生长模式下,通过分析Ⅲ-Ⅴ族化合物<span style=\"color:red\">半导体</span>材料在衬底表面的反应过程,建立了一个实用的生长模型.此模型是基于分子动力学、化学反应热力学理论分析之上的.针对Turbo-Disc 反应体系,分析了Turbo-Disc 的传热以及质量传送模式后, 建立了Turbo-Disc的生长模型.在此模型中建立了输入反应室的参数(IPs)和边界层的生长参数的关系.在对组分匹配的GaInP/GaAs 三组分生长体系进行分析时,发现此模型是非常有效的,理论计算的结果与实验得到的结果非常吻合.应用此模型在实际生产中可以迅速地得到匹配的多组分外延层.","authors":[{"authorName":"王浩","id":"255a6323-15c4-4cdd-9a22-122d5281eb8d","originalAuthorName":"王浩"},{"authorName":"廖常俊","id":"85e7b7e1-c5a0-41cb-80ae-415f112f3550","originalAuthorName":"廖常俊"},{"authorName":"范广涵","id":"9c60db10-5c65-4bc9-aa7c-8fc65bbf30d6","originalAuthorName":"范广涵"},{"authorName":"刘颂豪","id":"5354f5de-80eb-4aa9-aa8f-d28631390308","originalAuthorName":"刘颂豪"},{"authorName":"郑树文","id":"f1fffe83-20fd-4b1e-bb28-f3fe7a03a1a6","originalAuthorName":"郑树文"},{"authorName":"李述体","id":"9773960a-56d3-409f-af9d-ed604df42fdb","originalAuthorName":"李述体"},{"authorName":"郭志友","id":"c4806904-c62d-406e-974c-c3a108eab263","originalAuthorName":"郭志友"},{"authorName":"孙慧卿","id":"3dc18b01-f7ce-4a9e-a754-65efbd18a75a","originalAuthorName":"孙慧卿"},{"authorName":"陈贵楚","id":"cd64938f-180c-4783-8af8-7140406ab3b8","originalAuthorName":"陈贵楚"},{"authorName":"陈炼辉","id":"8f77de8d-8c17-4074-96b9-4c74e3e90464","originalAuthorName":"陈炼辉"},{"authorName":"吴文光","id":"36a79c42-a3ec-4779-ac67-3174d71cac21","originalAuthorName":"吴文光"},{"authorName":"李华兵","id":"37b37035-dc3d-4681-a8a7-136809781654","originalAuthorName":"李华兵"}],"doi":"10.3969/j.issn.1000-985X.2004.04.018","fpage":"549","id":"429ef30e-f23f-44b6-ae10-0337ce397577","issue":"4","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"b1798c46-6375-472d-a714-2a86c3419ba9","keyword":"<span style=\"color:red\">MOCVD</span>","originalKeyword":"MOCVD"},{"id":"ff989512-27df-4a65-a95f-79645b6c930c","keyword":"Turbo-Disc","originalKeyword":"Turbo-Disc"},{"id":"8898dda4-4e5a-4c19-b207-ffdd52138a15","keyword":"生长动力学","originalKeyword":"生长动力学"},{"id":"e5dd345d-e685-4f27-8d30-a2921853c6b0","keyword":"GaInP","originalKeyword":"GaInP"}],"language":"zh","publisherId":"rgjtxb98200404018","title":"一个实用的生产用Ⅲ-Ⅴ族化合物<span style=\"color:red\">半导体</span>材料Turbo-Disc <span style=\"color:red\">MOCVD</span>生长模型","volume":"33","year":"2004"},{"abstractinfo":"本文论述了室温<span style=\"color:red\">半导体</span>核辐射探测器新材料及其探测器的研究发展过程和最新动态,分别介绍了几种主要室温<span style=\"color:red\">半导体</span>核辐射探测器新材料晶体的组成、结构、性能及其探测器的制备技术,主要应用情况.结果表明:HgI2、CdZnTe和CdSe单晶体是性能优异的室温<span style=\"color:red\">半导体</span>核辐射探测器新材料,用其制作的探测器,可在室温下广泛用于环境监测、核医学、工业无损检测、安全检查、核武器突防、航空航天、天体物理和高能物理等领域.因此,近年来对大尺寸高质量HgI2、CdZnTe和CdSe单晶体及其室温核辐射探测器的研究,已成为高技术新材料领域的前沿研究课题.","authors":[{"authorName":"朱世富","id":"8a40e0d0-aa67-40ed-b324-6d0c33449359","originalAuthorName":"朱世富"},{"authorName":"赵北君","id":"1397585f-8888-4c6e-be38-aac3404c7fe2","originalAuthorName":"赵北君"},{"authorName":"王瑞林","id":"adb83e89-7cc7-474d-99ba-2e9b667a9bca","originalAuthorName":"王瑞林"},{"authorName":"高德友","id":"3673be66-e7f1-4103-91b5-cc06797fe039","originalAuthorName":"高德友"},{"authorName":"韦永林","id":"ce53bcfa-efb0-473b-9f63-029b8afdc954","originalAuthorName":"韦永林"}],"doi":"10.3969/j.issn.1000-985X.2004.01.002","fpage":"6","id":"6054f54d-e8c1-4207-b0d7-929014ab1575","issue":"1","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"2cb6defc-cf64-4d24-8d7b-c8abb5eea989","keyword":"<span style=\"color:red\">半导体</span>新材料","originalKeyword":"半导体新材料"},{"id":"0fa81e42-9d28-4878-b121-707ac183ab67","keyword":"室温核辐射探测器","originalKeyword":"室温核辐射探测器"},{"id":"9a9ac6d1-14af-4128-ac93-3dc735d45a31","keyword":"制备技术","originalKeyword":"制备技术"},{"id":"b3f67272-345d-4d0b-a299-77d202637b14","keyword":"性能","originalKeyword":"性能"},{"id":"2057efb9-a1cd-48e7-934a-830062f38aac","keyword":"应用","originalKeyword":"应用"}],"language":"zh","publisherId":"rgjtxb98200401002","title":"室温<span style=\"color:red\">半导体</span>核辐射探测器新材料及其<span style=\"color:red\">器件</span>研究","volume":"33","year":"2004"},{"abstractinfo":"区熔法工艺制备的Ti2 Be3温差发电材料，以PN结为研究对象。通过有限体积法对单对<span style=\"color:red\">半导体</span>PN 结模型的温度、流场进行模拟，并用热阻分析法对传热过程进行计算，考虑热电转换过程受 PN 结空腔内气体对流、热传导和辐射的影响。研究结果表明，数值模拟和热阻分析法所得结果吻合，芯片传热过程中陶瓷基板热阻耗散46％的温差，且当热端温度达1000 K时，辐射传热量占总传热量的37％；因此对<span style=\"color:red\">半导体</span>PN 结模型进行优化，适当降低陶瓷基底热阻有利于提高<span style=\"color:red\">半导体</span>PN结实际温差和应用价值。","authors":[{"authorName":"王长宏","id":"b06bfdde-3f91-40a5-ae53-e8cea4c7a313","originalAuthorName":"王长宏"},{"authorName":"李娜","id":"4aaae6d4-2b55-4377-88d2-b7c3fe9dcb8d","originalAuthorName":"李娜"},{"authorName":"林涛","id":"ad2744f8-1267-43d9-8cc2-3b4e8ed95918","originalAuthorName":"林涛"},{"authorName":"吴浩东","id":"9865ad0b-2743-41cb-a4c9-71e2111d7b2c","originalAuthorName":"吴浩东"}],"doi":"10.3969/j.issn.1001-9731.2016.12.024","fpage":"12147","id":"04234154-c53c-4287-98a6-474dd00ee471","issue":"12","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"421d62dc-c50f-4106-b367-d44c490fa195","keyword":"温差发电<span style=\"color:red\">器件</span>","originalKeyword":"温差发电器件"},{"id":"c1a0efbd-b6f8-47df-97eb-d1b0becf03d2","keyword":"热电转换","originalKeyword":"热电转换"},{"id":"f0efa446-3366-4028-a0c3-f965f8d3f4c5","keyword":"热电性能","originalKeyword":"热电性能"},{"id":"38322146-303d-492a-9bcc-a402b7bdd88c","keyword":"数值分析","originalKeyword":"数值分析"}],"language":"zh","publisherId":"gncl201612024","title":"<span style=\"color:red\">半导体</span>P-N型温差发电<span style=\"color:red\">器件</span>热电性能研究?","volume":"47","year":"2016"}],"totalpage":544,"totalrecord":5440}