{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"利用光学显微镜和X射线衍射技术,分析了非晶态<span style=\"color:red\">Se</span>和掺杂Sb的<span style=\"color:red\">Se</span><span style=\"color:red\">薄膜</span>的晶化特性.<span style=\"color:red\">Se</span><span style=\"color:red\">薄膜</span>由于保存周期不同以及Sb掺杂到<span style=\"color:red\">Se</span>中的Sb含量的多少都会影响<span style=\"color:red\">Se</span>的晶化特性;在热处理下<span style=\"color:red\">薄膜</span>的晶化呈现各向异性的择优生长.分析了晶化过程中微裂纹的产生,晶界的产生和体积收缩.<span style=\"color:red\">薄膜</span>与衬底之间的热应力是产生微裂纹的主要因素.","authors":[{"authorName":"叶水驰","id":"44c5685d-0eb9-4abb-a7f7-4867d48d8278","originalAuthorName":"叶水驰"},{"authorName":"鲍海飞","id":"ecc2a474-28a2-4836-ba70-545e04fc805e","originalAuthorName":"鲍海飞"},{"authorName":"蓝慕杰","id":"bcdbba60-de33-4644-8c81-0469a751b445","originalAuthorName":"蓝慕杰"}],"doi":"10.3969/j.issn.1000-985X.1998.01.015","fpage":"70","id":"6a47a770-9b83-47fb-9061-21afdf167eb5","issue":"1","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"37cebf6c-f923-49d5-a738-7047ac135e5c","keyword":"<span style=\"color:red\">Se</span><span style=\"color:red\">薄膜</span>","originalKeyword":"Se薄膜"},{"id":"691f03fe-fcc0-47e3-86e6-ec85aca9fc5c","keyword":"掺杂Sb的<span style=\"color:red\">Se</span><span style=\"color:red\">薄膜</span>","originalKeyword":"掺杂Sb的Se薄膜"},{"id":"cb8c156b-26d5-4d35-a7dc-7106a628d50c","keyword":"晶化","originalKeyword":"晶化"},{"id":"131d7359-3a93-402b-9973-b944d4c587e5","keyword":"微裂纹","originalKeyword":"微裂纹"}],"language":"zh","publisherId":"rgjtxb98199801015","title":"非晶态<span style=\"color:red\">Se</span>及掺杂Sb的<span style=\"color:red\">Se</span><span style=\"color:red\">薄膜</span>晶化特性研究","volume":"27","year":"1998"},{"abstractinfo":"本文在25 ℃、相对湿度50%的条件下,分别蒸镀了Al,Al/<span style=\"color:red\">Se</span><span style=\"color:red\">薄膜</span>,研究了它们在空气中的导电性能,试验结果表明,只需50 s, Al<span style=\"color:red\">薄膜</span>的氧化反应已基本完成,其电阻率变化率为24.9%;大约需要2 min,Al/<span style=\"color:red\">Se</span><span style=\"color:red\">薄膜</span>电阻变化率为4.5%,随后其电阻基本处于稳定状态.这主要是因为<span style=\"color:red\">薄膜</span>边沿和镀<span style=\"color:red\">Se</span><span style=\"color:red\">薄膜</span>时形成的针孔的铝膜首先被氧化,使电阻增加.形成的Al2O3<span style=\"color:red\">薄膜</span>阻止了反应的继续进行,电阻不再变化.","authors":[{"authorName":"李志贤","id":"ad5201ae-8012-4304-9d39-6e4294b463ce","originalAuthorName":"李志贤"},{"authorName":"赵彦钊","id":"a1df9e95-8dcc-4f8c-8cf5-c30b00cc5d0b","originalAuthorName":"赵彦钊"},{"authorName":"张方辉","id":"d09970f6-f120-48ce-8753-e160fdf7d512","originalAuthorName":"张方辉"}],"doi":"","fpage":"1271","id":"ffd9bc58-7099-4fd1-b0cb-19b7fff7a0d2","issue":"6","journal":{"abbrevTitle":"GSYTB","coverImgSrc":"journal/img/cover/GSYTB.jpg","id":"36","issnPpub":"1001-1625","publisherId":"GSYTB","title":"硅酸盐通报   "},"keywords":[{"id":"7a7b2b7b-581a-4832-bc24-735166fbdd95","keyword":"电阻变化率","originalKeyword":"电阻变化率"},{"id":"3899b96a-d315-4a0c-b493-cab36624e9fb","keyword":"稳定性","originalKeyword":"稳定性"},{"id":"7cf67601-9f7b-4852-95ea-1fb04e378684","keyword":"Al<span style=\"color:red\">薄膜</span>","originalKeyword":"Al薄膜"},{"id":"0c5591bc-b6a4-4036-8f1b-3c41d87f8a10","keyword":"Al/<span style=\"color:red\">Se</span><span style=\"color:red\">薄膜</span>","originalKeyword":"Al/Se薄膜"}],"language":"zh","publisherId":"gsytb200806038","title":"<span style=\"color:red\">薄膜</span><span style=\"color:red\">Se</span>对<span style=\"color:red\">薄膜</span>Al电极的防护作用探讨","volume":"27","year":"2008"},{"abstractinfo":"对于绿光OLED多层器件,在高真空条件下,利用真空蒸镀的方法,在各功能层蒸镀完成后,又在阴极的外面蒸镀了一层硒<span style=\"color:red\">薄膜</span>封装层,然后再按一般方法进行封装.对比了正常封装与增加<span style=\"color:red\">Se</span><span style=\"color:red\">薄膜</span>封装层后器件的性能,对比实验中封装过程都未加干燥剂.研究发现未加<span style=\"color:red\">Se</span><span style=\"color:red\">薄膜</span>封装层器件的半衰期为2 880 h,增加<span style=\"color:red\">Se</span><span style=\"color:red\">薄膜</span>封装层器件的半衰期接近4 000 h,<span style=\"color:red\">Se</span><span style=\"color:red\">薄膜</span>封装层的增加将器件的寿命延长了1.4倍;研究还发现<span style=\"color:red\">Se</span><span style=\"color:red\">薄膜</span>封装层基本不影响器件的电流-电压特性、色坐标等光电性能.","authors":[{"authorName":"张方辉","id":"d2378983-0a90-414c-b3c1-949042a01f28","originalAuthorName":"张方辉"},{"authorName":"李欣","id":"cc6a4757-1847-4e38-b0a2-816d34a13871","originalAuthorName":"李欣"},{"authorName":"王秀峰","id":"8bb5b360-039e-4e46-839a-83812686ed7b","originalAuthorName":"王秀峰"},{"authorName":"张志刚","id":"3d08f7be-ba20-43e6-a67c-24c34b4d0078","originalAuthorName":"张志刚"},{"authorName":"张宏科","id":"cab35311-5d16-41ca-aad5-597db0091d55","originalAuthorName":"张宏科"}],"doi":"10.3969/j.issn.1007-2780.2008.01.001","fpage":"1","id":"8edb638d-9584-45eb-a529-5ceada6ec2f3","issue":"1","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"aba50eca-9b14-4906-9472-bc19c69a6039","keyword":"OLED","originalKeyword":"OLED"},{"id":"1b673028-c5e3-4ebc-bd61-9ed4f18f6b1c","keyword":"<span style=\"color:red\">薄膜</span>封装","originalKeyword":"薄膜封装"},{"id":"80bba3f8-9e2b-41bc-9163-32c25ce05d34","keyword":"寿命","originalKeyword":"寿命"}],"language":"zh","publisherId":"yjyxs200801001","title":"<span style=\"color:red\">Se</span><span style=\"color:red\">薄膜</span>封装层对OLED器件寿命的影响","volume":"23","year":"2008"},{"abstractinfo":"采用连续离子层吸附反应(SILAR)法,分别用含有<span style=\"color:red\">Se</span>2-,Bi3+和Sb3+的离子溶液作为独立的阴、阳离子前驱溶液,以载玻片为衬底,在室温下沉积出致密且具有镜面金属光泽的Bi2<span style=\"color:red\">Se3-Sb2Se</span>3<span style=\"color:red\">薄膜</span>材料.为了改善<span style=\"color:red\">薄膜</span>样品的结晶状态,对其进行了退火处理.用AFM观察了<span style=\"color:red\">薄膜</span>样品的表面形貌,用XRD分析了退火前后<span style=\"color:red\">薄膜</span>样品的结晶状态.结果表明:<span style=\"color:red\">薄膜</span>样品经200℃较低温度下退火处理4 h以后,<span style=\"color:red\">薄膜</span>的结晶状态由无定形态转化为多晶态,其平均晶粒尺寸为30 nm～40 nm.","authors":[{"authorName":"陈多金","id":"2f9ad807-c52e-44b0-a1a0-3e3acd14fdcd","originalAuthorName":"陈多金"},{"authorName":"雷天民","id":"5dfdaab2-e69c-42bc-b64e-9f8c858083b4","originalAuthorName":"雷天民"},{"authorName":"卢刚","id":"fa51c882-b38a-4486-b9d7-023beba72c73","originalAuthorName":"卢刚"}],"doi":"","fpage":"343","id":"2f686ce9-dfbe-41b9-b54c-cfa7713517d6","issue":"z2","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"03127e7b-b41f-46a4-935e-8511b716e9f1","keyword":"SILAR法","originalKeyword":"SILAR法"},{"id":"d9f8feac-5064-4524-8f4d-920560af5f08","keyword":"Bi2<span style=\"color:red\">Se3-Sb2Se</span>3","originalKeyword":"Bi2Se3-Sb2Se3"},{"id":"f74d7459-9fb7-42cb-ac79-a4e8d6c5d006","keyword":"<span style=\"color:red\">薄膜</span>","originalKeyword":"薄膜"},{"id":"8cbbd37b-58d3-427a-9002-281a32ea8f0e","keyword":"表征","originalKeyword":"表征"}],"language":"zh","publisherId":"xyjsclygc2006z2084","title":"纳米晶Bi2<span style=\"color:red\">Se3-Sb2Se</span>3<span style=\"color:red\">薄膜</span>的SILAR法制备及表征","volume":"35","year":"2006"},{"abstractinfo":"采用连续离子层吸附反应(SILAR)法,分别用含有<span style=\"color:red\">Se</span>2-,Bi3+和Sb3+的离子溶液作为独立的阴、阳离子前驱溶液,以载玻片为衬底,在室温下沉积出致密且具有镜面金属光泽的Bi2<span style=\"color:red\">Se3-Sb2Se</span>3<span style=\"color:red\">薄膜</span>材料.为了改善<span style=\"color:red\">薄膜</span>样品的结晶状态,对其进行了退火处理.用AFM观察了<span style=\"color:red\">薄膜</span>样品的表面形貌,用XRD分析了退火前后<span style=\"color:red\">薄膜</span>样品的结晶状态.结果表明:<span style=\"color:red\">薄膜</span>样品经200℃较低温度下退火处理4 h以后,<span style=\"color:red\">薄膜</span>的结晶状态由无定形态转化为多晶态,其平均晶粒尺寸为30 nm～40 nm.","authors":[{"authorName":"陈多金","id":"905f6f6a-4535-419b-bb69-204400f49aed","originalAuthorName":"陈多金"},{"authorName":"雷天民","id":"c2bd5a69-1d13-4130-bd7d-db2e42d39c6d","originalAuthorName":"雷天民"},{"authorName":"卢刚","id":"fbe04d37-1b01-4f3a-b06d-ca8766afb1e6","originalAuthorName":"卢刚"}],"doi":"","fpage":"343","id":"cea43dec-b8c3-4fdd-83fb-ac8fda56f3d4","issue":"z1","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"0046c372-5d4c-4b09-ae4c-d03fdb8bb743","keyword":"SILAR法","originalKeyword":"SILAR法"},{"id":"def30477-3ddd-4413-94da-974123c2cf99","keyword":"Bi2<span style=\"color:red\">Se3-Sb2Se</span>3","originalKeyword":"Bi2Se3-Sb2Se3"},{"id":"29b3ba36-f75d-4766-9969-a9cebb8e471f","keyword":"<span style=\"color:red\">薄膜</span>","originalKeyword":"薄膜"},{"id":"df509eca-9be3-4dd8-8290-05becc0edbca","keyword":"表征","originalKeyword":"表征"}],"language":"zh","publisherId":"xyjsclygc2006z1084","title":"纳米晶Bi2<span style=\"color:red\">Se3-Sb2Se</span>3<span style=\"color:red\">薄膜</span>的SILAR法制备及表征","volume":"35","year":"2006"},{"abstractinfo":"<span style=\"color:red\">Se</span>量是影响CIGS<span style=\"color:red\">薄膜</span>生长的重要因素之一.本实验利用三步共蒸法在不同<span style=\"color:red\">Se</span>量常温下沉积CIGS<span style=\"color:red\">薄膜</span>,而后对衬底分三步在不同温度下真空退火,采用扫描电子显微镜(SEM)和能量散射谱(EDS)观察和分析了<span style=\"color:red\">薄膜</span>的表面形貌和元素成分,采用X射线衍射仪(XRD)表征了<span style=\"color:red\">薄膜</span>的组织结构,采用紫外可见分光光度计(UV)研究了<span style=\"color:red\">薄膜</span>的光学性质,结果表明真空退火下<span style=\"color:red\">Se</span>量应严格控制在Culn0.7 Ga0.3 <span style=\"color:red\">Se</span>2化学计量比范围内,这样有利于制备出较高吸收率的CIGS<span style=\"color:red\">薄膜</span>.","authors":[{"authorName":"李文科","id":"7c8b5be7-0862-492c-9475-1e7d4aec5bcf","originalAuthorName":"李文科"},{"authorName":"唐振方","id":"8b2aa705-17f7-4bc8-b2b4-81f4c47099bf","originalAuthorName":"唐振方"}],"doi":"","fpage":"408","id":"d44a7c90-41b9-40a9-b7f8-cd5627ec0a1f","issue":"3","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"f1b27097-1f5b-4c2d-87f0-5beb01157562","keyword":"CIGS <span style=\"color:red\">薄膜</span>","originalKeyword":"CIGS 薄膜"},{"id":"fb5994f5-09b1-435b-9d2d-feea77f7bf3f","keyword":"<span style=\"color:red\">Se</span> 量","originalKeyword":"Se 量"},{"id":"5c9fb926-d331-4594-91a5-b78f7eda7af2","keyword":"真空退火","originalKeyword":"真空退火"},{"id":"7fb22434-f641-4bb6-9006-b3bf2dab6e86","keyword":"晶体结构","originalKeyword":"晶体结构"},{"id":"b706ba0a-6b4a-4d1d-95a9-d58b41af2dd6","keyword":"光学性质","originalKeyword":"光学性质"}],"language":"zh","publisherId":"clkxygc201003021","title":"<span style=\"color:red\">Se</span>量对CIGS<span style=\"color:red\">薄膜</span>的结构及光学性质的影响","volume":"28","year":"2010"},{"abstractinfo":"在Mo基底上,采用恒电位法从含有CuCl2、InCl3、GaCl3、H2SeO3、柠檬酸的水溶液中电沉积制备Cu(In,Ga)<span style=\"color:red\">Se</span>2<span style=\"color:red\">薄膜</span>,用HCl调节pH值为2.5,并对沉积<span style=\"color:red\">薄膜</span>400℃左右Ar气氛中退火20 min.对退火前后的膜进行X射线衍射,扫描电镜和能谱分析仪分析,结果表明,电沉积制备的Cu(In,Ga)<span style=\"color:red\">Se</span>2<span style=\"color:red\">薄膜</span>为黄铜矿结构,退火后,共沉积<span style=\"color:red\">薄膜</span>的结晶度提高,晶粒尺寸增加,<span style=\"color:red\">Se</span>含量减少.","authors":[{"authorName":"刘琪","id":"85d27c3b-0fbb-4f8b-a586-419f947d64e9","originalAuthorName":"刘琪"},{"authorName":"冒国兵","id":"c069d8a2-e72d-4762-95a2-da42bad622cd","originalAuthorName":"冒国兵"},{"authorName":"万兵","id":"a7848e46-efb4-4224-84ae-c19fc679aad9","originalAuthorName":"万兵"},{"authorName":"敖建平","id":"d6be30c8-0e34-4b60-97d3-ebab67b24030","originalAuthorName":"敖建平"}],"doi":"10.3969/j.issn.1007-2330.2007.01.016","fpage":"61","id":"ae37ddf7-24d6-454f-9e8f-cffc0c9dbd97","issue":"1","journal":{"abbrevTitle":"YHCLGY","coverImgSrc":"journal/img/cover/YHCLGY.jpg","id":"77","issnPpub":"1007-2330","publisherId":"YHCLGY","title":"宇航材料工艺   "},"keywords":[{"id":"fb9d5c49-b706-4d29-b3b8-e60895822fdb","keyword":"电沉积","originalKeyword":"电沉积"},{"id":"533caccc-6786-4d54-9054-fcce92e56111","keyword":"退火","originalKeyword":"退火"},{"id":"a0de8f16-caab-42f6-affc-f89e1d25a3a3","keyword":"CIGS<span style=\"color:red\">薄膜</span>","originalKeyword":"CIGS薄膜"},{"id":"3cc344a7-31be-45e9-a29c-37bca7a9828d","keyword":"太阳电池","originalKeyword":"太阳电池"}],"language":"zh","publisherId":"yhclgy200701016","title":"电沉积太阳电池用Cu(In,Ga)<span style=\"color:red\">Se</span>2<span style=\"color:red\">薄膜</span>","volume":"37","year":"2007"},{"abstractinfo":"采用电沉积方法在SnO<sub>2</sub>玻璃基底上制备了Co-<span style=\"color:red\">Se</span>化合物<span style=\"color:red\">薄膜</span>. 研究了<span style=\"color:red\">薄膜</span>形成的电化学机理和电沉积工艺对<span style=\"color:red\">薄膜</span>组成与形貌的影响, 并表征了<span style=\"color:red\">薄膜</span>的结构与光学性质. 结果表明:Co<sup>2+</sup>受预沉积<span style=\"color:red\">Se</span>的表面诱导还原或直接与H<sub>2</sub>SeO<sub>3</sub>的六电子还原反应产物H<sub>2</sub><span style=\"color:red\">Se</span>发生反应形成Co-<span style=\"color:red\">Se</span>化合物; 沉积电位、沉积温度和pH值均显著影响电沉积Co-<span style=\"color:red\">Se</span>化合物<span style=\"color:red\">薄膜</span>的形貌与成分; 在沉积电位为-0.5V(<em>&lt;&gt;vs</em>SCE)、沉积温度为50℃和pH值为2.0时可制备出表面致密平整且呈六方晶型结构的富硒CoSe<span style=\"color:red\">薄膜</span>, 其光吸收系数达到1&times;10<sup>5</sup>cm<sup>-</sup><sup>1</sup>,直接带隙宽度为(1.53&plusmn;0.01)eV,接近单结太阳电池光吸收层材料的理论最佳值.","authors":[{"authorName":"王博","id":"a5ccfc4e-c284-458f-9953-ca9f573437ab","originalAuthorName":"王博"},{"authorName":"刘芳洋","id":"9b9ff5d8-4651-4eb5-83f2-7f0edb29ee6d","originalAuthorName":"刘芳洋"},{"authorName":"李劼","id":"92bcc8df-1f5d-48a1-8ac8-6c9e7272a60c","originalAuthorName":"李劼"},{"authorName":"赖延清","id":"36e0288a-1cdf-4859-9be8-51422a805f3b","originalAuthorName":"赖延清"},{"authorName":"张治安","id":"4e741480-2b92-461e-a1e0-ac442bce8578","originalAuthorName":"张治安"},{"authorName":"刘业翔","id":"d83e07c2-073e-4bde-b678-9e6ede22fae7","originalAuthorName":"刘业翔"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2011.00403","fpage":"403","id":"15d488b7-fc3a-4193-b3f9-4c66e00c86c6","issue":"4","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"ce6ddbf7-5e7f-4655-af61-20bdf4fff094","keyword":"CoSe<span style=\"color:red\">薄膜</span>","originalKeyword":"CoSe薄膜"},{"id":"5d5a107e-980a-4b56-ad83-dbb27cd0904b","keyword":"cyclic voltammetry","originalKeyword":"cyclic voltammetry"},{"id":"941d3293-4f33-4f1c-a8be-a796bb7c8558","keyword":"under potential deposition","originalKeyword":"under potential deposition"},{"id":"ffcf7f16-3540-4e17-90d2-2799c0fe7f5f","keyword":"band gap","originalKeyword":"band gap"},{"id":"c68cd5c6-de76-4dee-bf67-4ba23bbf496e","keyword":"solar cells","originalKeyword":"solar cells"}],"language":"zh","publisherId":"1000-324X_2011_4_1","title":"Co-<span style=\"color:red\">Se</span> 化合物<span style=\"color:red\">薄膜</span>的电沉积制备与表征","volume":"26","year":"2011"},{"abstractinfo":"采用电沉积方法在SnO2玻璃基底上制备了Co-<span style=\"color:red\">Se</span>化合物<span style=\"color:red\">薄膜</span>.研究了<span style=\"color:red\">薄膜</span>形成的电化学机理和电沉积工艺对<span style=\"color:red\">薄膜</span>组成与形貌的影响,并表征了<span style=\"color:red\">薄膜</span>的结构与光学性质.结果表明:Co2+受预沉积<span style=\"color:red\">Se</span>的表面诱导还原或直接与H2SeO3的六电子还原反应产物H2<span style=\"color:red\">Se</span>发生反应形成Co-<span style=\"color:red\">Se</span>化合物;沉积电位、沉积温度和pH值均显著影响电沉积Co-<span style=\"color:red\">Se</span>化合物<span style=\"color:red\">薄膜</span>的形貌与成分;在沉积电位为-0.5V(vs SCE)、沉积温度为50℃和pH值为2.0时可制备出表面致密平格且呈六方晶型结构的富硒CoSe<span style=\"color:red\">薄膜</span>,其光吸收系数达到1×105 cm-1,直接带隙宽度为(1.53±0.01)eV,接近单结太阳电池光吸收层材料的理论最佳值.","authors":[{"authorName":"王博","id":"d7a88066-0f20-46da-9ecb-a3a92c7436bb","originalAuthorName":"王博"},{"authorName":"刘芳洋","id":"d31abecb-da94-40ad-a675-8d1837c8e0e7","originalAuthorName":"刘芳洋"},{"authorName":"李劼","id":"d420bfa8-66b0-41aa-817e-391de5fb0b7d","originalAuthorName":"李劼"},{"authorName":"赖延清","id":"31c42376-28f5-47b4-a951-e08daa8d8b99","originalAuthorName":"赖延清"},{"authorName":"张治安","id":"2dcd4fd4-4473-47e4-9023-274989dfa7b0","originalAuthorName":"张治安"},{"authorName":"刘业翔","id":"22021329-c6cc-4cfd-8997-94bf67b671ec","originalAuthorName":"刘业翔"}],"doi":"10.3724/SP.J.1077.2011.00403","fpage":"403","id":"d83c110d-50e2-4ab5-ac1e-af17f6ceaa23","issue":"4","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"37701e94-0424-4c21-94c1-024f9ec33d59","keyword":"CoSe<span style=\"color:red\">薄膜</span>","originalKeyword":"CoSe薄膜"},{"id":"da577fa7-24ac-459e-a1e7-0cf5818361bd","keyword":"循环伏安","originalKeyword":"循环伏安"},{"id":"3571e0e7-c0c5-4a1c-91b3-8974cae01f4c","keyword":"欠电位沉积","originalKeyword":"欠电位沉积"},{"id":"c681bc0b-90c2-4854-86a2-aa47e6339056","keyword":"带隙宽度","originalKeyword":"带隙宽度"},{"id":"901d10a2-43fe-482f-85f1-19b94e3d7e46","keyword":"太阳电池","originalKeyword":"太阳电池"}],"language":"zh","publisherId":"wjclxb201104012","title":"Co-<span style=\"color:red\">Se</span>化合物<span style=\"color:red\">薄膜</span>的电沉积制备与表征","volume":"26","year":"2011"},{"abstractinfo":"在含有Bi 3＋、HTeO2＋、<span style=\"color:red\">Se</span>4＋离子的水溶液中通过电化学方法实现了Bi2Te3-ySey热电<span style=\"color:red\">薄膜</span>沉积,研究了电沉积Bi2Te3-ySey的阴极极化曲线及热电<span style=\"color:red\">薄膜</span>的生长过程,通过电子显微镜（SEM）和能谱仪（EDS）等手段对热电<span style=\"color:red\">薄膜</span>进行了形貌、成分分析。结果表明电解液的离子组成、沉积电位对<span style=\"color:red\">薄膜</span>成分、形貌有较大影响。在-0.07V沉积电位下制备的热电<span style=\"color:red\">薄膜</span>Bi2Te2.75<span style=\"color:red\">Se</span>0.95晶粒大小均匀,结构致密。","authors":[{"authorName":"任大海","id":"6867ba5b-2527-40ba-81be-6398c254eeea","originalAuthorName":"任大海"},{"authorName":"戴震宇","id":"7ee13b8b-47b3-44fd-866b-98fb305e3aba","originalAuthorName":"戴震宇"},{"authorName":"尤政","id":"e752c924-c0be-49a4-8c77-d1e8d7348990","originalAuthorName":"尤政"}],"doi":"","fpage":"1261","id":"a8c75500-59a0-4ccd-9c9d-d4ebf2702bc6","issue":"7","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"78865e1b-ffc6-49c0-b39c-3aa97e8eab5f","keyword":"热电<span style=\"color:red\">薄膜</span>","originalKeyword":"热电薄膜"},{"id":"ab54625a-8941-4444-ac14-cfa45683d92f","keyword":"热电转换","originalKeyword":"热电转换"},{"id":"687bd885-41ff-49f4-94fc-dece17111fb6","keyword":"电沉积","originalKeyword":"电沉积"}],"language":"zh","publisherId":"gncl201107027","title":"Bi-Te-<span style=\"color:red\">Se</span>热电<span style=\"color:red\">薄膜</span>的电化学沉积","volume":"42","year":"2011"}],"totalpage":1072,"totalrecord":10718}