{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"通过自行设计一个电路对低温超导实验中记录仪电路进行改进,有利于实验的观察,得到了更好的实验结果.","authors":[{"authorName":"王洪涛","id":"b7b9e498-3806-4e9f-bc9f-72de0987468d","originalAuthorName":"王洪涛"},{"authorName":"王焕海","id":"eca3b730-054a-4022-b398-c4249e87b29d","originalAuthorName":"王焕海"}],"doi":"10.3969/j.issn.1001-0777.2002.01.014","fpage":"45","id":"dfc0a010-4c5d-4a99-9151-733c8c1314b7","issue":"1","journal":{"abbrevTitle":"WLCS","coverImgSrc":"journal/img/cover/WLCS.jpg","id":"64","issnPpub":"1001-0777","publisherId":"WLCS","title":"物理测试"},"keywords":[{"id":"ff4d6dfe-08e7-46c7-ad07-0bfc9f7917ca","keyword":"低温超导实验","originalKeyword":"低温超导实验"},{"id":"5d485660-c50a-48a0-8920-2e28b8746a8d","keyword":"电路改进","originalKeyword":"电路改进"}],"language":"zh","publisherId":"wlcs200201014","title":"低温超导实验中记录仪电路改进","volume":"","year":"2002"},{"abstractinfo":"现有荫罩式等离子体显示屏(SMPDP)等效电路模型的建立,是基于所有像素特性一致,同时工作状态相同的假设,因此在其仿真应用中存在局限性.文章在原模型基础上进行了改进设计,提出了多放电单元矩阵排列式等效电路模型.该模型在原电路模型的基础上增加了寻址电极驱动IC和数据电极驱动IC电路,同时复制了多个放电单元等效电路模型.该模型在实现原等效电路模型各项仿真功能的基础上,还能实现原模型所不及的仿真功能,例如寻址期工作特性仿真、像素单元特性不一致对整屏性能的影响、相邻像素之间相互影响等.通过在Pspice环境下对矩阵排列型等效电路模型的系统工作特性仿真,所得结果与实验测试结果基本一致,因此该模型具有良好的等效替代性,适用于今后对SMPDP的系统设计与优化.","authors":[{"authorName":"郭侃","id":"5523bbae-7789-41af-a4c1-763ff90daabc","originalAuthorName":"郭侃"},{"authorName":"汤勇明","id":"b360faad-495d-4fc2-a3fc-896dfa1a054a","originalAuthorName":"汤勇明"},{"authorName":"王保平","id":"6eb96934-5fe7-4fe5-9eaf-e2536c2cf7e9","originalAuthorName":"王保平"}],"doi":"10.3969/j.issn.1007-2780.2007.02.017","fpage":"197","id":"53376380-33d1-4d8d-b929-4bf906008476","issue":"2","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示 "},"keywords":[{"id":"791316f5-46e2-454c-a08a-a24acbe5317b","keyword":"荫罩式等离子体显示屏","originalKeyword":"荫罩式等离子体显示屏"},{"id":"25fa67ed-080c-478b-ba6a-fbf9434995ca","keyword":"等效电路模型","originalKeyword":"等效电路模型"},{"id":"c11af95c-5a50-4f69-a345-26133c2960fc","keyword":"Pspice电路仿真","originalKeyword":"Pspice电路仿真"},{"id":"ce367853-161f-485d-94b3-68f940b897e6","keyword":"矩阵排列","originalKeyword":"矩阵排列"}],"language":"zh","publisherId":"yjyxs200702017","title":"矩阵排列型SMPDP等效电路模型的改进","volume":"22","year":"2007"},{"abstractinfo":"针对可逆电路到量子电路的有效映射问题,提出了带禁忌表的大变异自适应遗传算法,用于量子可逆电路的综合.选取量子非门、控制非门、控制V门与控制V+门(NCV)构成量子门库,建立了量子电路计算模型.采用二进制串行编码方案,设计了适应度函数、进化算子及优化规则,实现了带禁忌表大变异自适应遗传算法的量子可逆电路综合,并用Revlib电路库进行了测试.结果表明该综合方法能同时得到多个功能解,且所生成电路的量子代价优于库中电路,验证了提出算法用于量子可逆电路综合的正确性和有效性.","authors":[{"authorName":"胡江","id":"a526d981-e2a5-4e16-a867-7853b543a1e1","originalAuthorName":"胡江"},{"authorName":"张巧文","id":"f0cc7a16-99d3-4ca0-8403-e584da6570d1","originalAuthorName":"张巧文"},{"authorName":"王阳","id":"31972c39-f6bc-4c11-824c-dae7cc707212","originalAuthorName":"王阳"}],"doi":"10.3969/j.issn.1007-5461.2017.02.010","fpage":"196","id":"e64f6d24-f434-488c-918f-27c34695626c","issue":"2","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报 "},"keywords":[{"id":"105ab3f4-4a53-412d-b2a9-bc9f6d896cec","keyword":"量子信息","originalKeyword":"量子信息"},{"id":"263f41a9-e231-46b2-a484-de1eea751904","keyword":"量子电路","originalKeyword":"量子电路"},{"id":"9c9f1684-9fd6-4798-8bb1-dba602bfa98b","keyword":"可逆逻辑综合","originalKeyword":"可逆逻辑综合"},{"id":"0a04eb30-37a1-4677-9ead-fea7bad486f1","keyword":"大变异自适应遗传算法","originalKeyword":"大变异自适应遗传算法"},{"id":"d03aab32-978b-4c03-a023-084152796c68","keyword":"禁忌表","originalKeyword":"禁忌表"}],"language":"zh","publisherId":"lzdzxb201702010","title":"基于改进遗传算法的量子可逆电路综合","volume":"34","year":"2017"},{"abstractinfo":"综述了印制电路板(PCB)孔金属化技术及其发展趋势,根据目前PCB孔金属化工艺存在的主要问题,指出了孔金属化工艺改进的途径和研究的方向.","authors":[{"authorName":"郑雅杰","id":"ade05c12-c67a-4e5d-990b-60635a2c231b","originalAuthorName":"郑雅杰"},{"authorName":"龚竹青","id":"03ba3bc0-62db-48a1-b4d1-d9a9ca1e09b0","originalAuthorName":"龚竹青"},{"authorName":"陈白珍","id":"eb92e5c6-4a42-40dc-a2e9-b92054366c00","originalAuthorName":"陈白珍"},{"authorName":"易丹青","id":"d35fcd93-4071-4a8b-bcdf-247dc2300e64","originalAuthorName":"易丹青"},{"authorName":"李新海","id":"3d67d6d5-7703-45f6-8df8-8a36460ab3e2","originalAuthorName":"李新海"}],"doi":"","fpage":"11","id":"52b32ce0-0c6a-4c65-9c94-5ef89162215e","issue":"4","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"deef3180-9b80-4436-a8e9-554cd8f113a2","keyword":"印刷电路板","originalKeyword":"印刷电路板"},{"id":"95bf9470-e542-42e4-b0aa-c424581abf5f","keyword":"孔金属化","originalKeyword":"孔金属化"},{"id":"52d9bc86-e41e-43f9-b4bf-dcee2eb50e91","keyword":"工艺改进","originalKeyword":"工艺改进"}],"language":"zh","publisherId":"cldb200304004","title":"印制电路板孔金属化及其工艺改进途径","volume":"17","year":"2003"},{"abstractinfo":"稳定性是开关电源设计的技术指标之一.电压拓扑中影响稳定性的因素主要由误差放大器引入,电流拓扑相对于电压拓扑虽有不少改进,但也给电路稳定性带来了新的影响因素,特别是次谐波振荡问题.为使输出电压稳定,满足EL灯的使用要求,文中提出了一种稳定的用于El灯驱动的Boost电路,该设计用带使能控制的电流比较器代替误差放大器,提高了电路的稳定性.文中详细分析了电路的工作过程,给出了电路的仿真结果.该电路响应时间为60 μs,基准电流源为4.3 μA,负载调整率为6%,电路稳定输出范围70~100 V,适用于19.4 cm2~38.7 cm2(3 in2~6 in2)的EL灯.该电路结构简单、稳定性好、响应快、功耗低、易于集成.","authors":[{"authorName":"唐莉芳","id":"04e2d29a-8c14-4188-b0cc-fb78eddebfb7","originalAuthorName":"唐莉芳"},{"authorName":"黎俐","id":"7639e039-b8cf-41cf-bf93-938564d0035f","originalAuthorName":"黎俐"},{"authorName":"杨毓俊","id":"5cd75faa-6b5a-402b-b469-2e9a205870c1","originalAuthorName":"杨毓俊"},{"authorName":"方健","id":"6305cc11-8fa5-42b0-b526-f5dc3c735938","originalAuthorName":"方健"},{"authorName":"张波","id":"de43909d-91ac-48e2-81e1-df4f837370a3","originalAuthorName":"张波"}],"doi":"10.3788/YJYXS20122705.0666","fpage":"666","id":"6a90c73d-aaa2-4a59-ae9e-59cd65e29ce4","issue":"5","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示 "},"keywords":[{"id":"2b3617a4-b6c6-4347-bc3d-689051ded5da","keyword":"场致发光灯驱动","originalKeyword":"场致发光灯驱动"},{"id":"afd0f4e1-8605-444d-b263-a020ec82dc0f","keyword":"Boost电路","originalKeyword":"Boost电路"},{"id":"4baa82bd-311a-42c0-8af7-4d6c80051c41","keyword":"稳定性","originalKeyword":"稳定性"},{"id":"ee40c039-181c-4b86-80b7-d8aca79ea253","keyword":"负载调整率","originalKeyword":"负载调整率"}],"language":"zh","publisherId":"yjyxs201205016","title":"用于场致发光灯稳定驱动的Boost电路","volume":"27","year":"2012"},{"abstractinfo":"从OLED的结构特性与发光原理出发,结合简单的电路模型和实验中观察到的现象分析了交叉效应的成因,提出了一种简单实用的驱动电路结构,利用反向电压抑制法有效地解决了无源OLED显示时的交叉效应问题,最后给出了对电路结构进行恒流源改进的设想.","authors":[{"authorName":"冯永茂","id":"d93dc632-25bb-444b-864d-8d851743c323","originalAuthorName":"冯永茂"},{"authorName":"王瑞光","id":"c291fb7f-ddd2-48a5-8e57-29bac5c08346","originalAuthorName":"王瑞光"},{"authorName":"罗锦","id":"aef056d9-cc94-4d52-ac3d-52c8f724db41","originalAuthorName":"罗锦"},{"authorName":"郑喜凤","id":"5697307c-b025-428b-877b-5d73a976de99","originalAuthorName":"郑喜凤"}],"doi":"10.3969/j.issn.1007-2780.2003.05.009","fpage":"362","id":"c306ab2b-3540-4da0-9bcf-2d8c5ba4745c","issue":"5","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示 "},"keywords":[{"id":"9c330c6c-618a-446d-888c-34ab8fdd46e9","keyword":"OLED","originalKeyword":"OLED"},{"id":"952610c5-530a-4bd7-9520-c580bd3a16e2","keyword":"无源驱动","originalKeyword":"无源驱动"},{"id":"94f37bed-6335-4ee0-a3f6-ed6b34e075d9","keyword":"交叉效应","originalKeyword":"交叉效应"},{"id":"f2ff6eab-9522-4a58-ab3e-8a77ddf6b613","keyword":"反向电压控制","originalKeyword":"反向电压控制"}],"language":"zh","publisherId":"yjyxs200305009","title":"无交叉效应无源OLED驱动电路的实现","volume":"18","year":"2003"},{"abstractinfo":"为了防止有机发光二极管(organic light-emitting diode,OLED)显示器随着使用时间增加而造成OLED像素驱动电路发生阈值电压和电源电压漂移,从而引起显示屏亮度不均匀和不稳定的现象,本文对OLED像素补偿驱动电路进行研究.首先对通用型的2T1C驱动电路进行分析,找出引起显示器亮度不均匀和不稳定的原因,然后以目前使用较多的4T1C像素补偿驱动电路为例,对该电路进行了深入的分析,指出这种电路结构的缺陷,最后针对这些缺陷,提出了改进的5T1C像素补偿驱动电路,并且对该电路进行了仿真,验证了其可行性.仿真结果表明,在显示阶段,输出电流稳定在2μA.基本可以改善OLED显示器亮度不稳定和不均匀的缺点.","authors":[{"authorName":"严利民","id":"de77cbd4-d5e6-4183-b364-6c8a6a3d4fe8","originalAuthorName":"严利民"},{"authorName":"龙云腾","id":"831e8ae4-9ab9-4af3-925e-d77f1332dd33","originalAuthorName":"龙云腾"},{"authorName":"郭丽媛","id":"2bd092cf-a953-4e90-8b8c-1465177bf5fa","originalAuthorName":"郭丽媛"}],"doi":"10.3788/YJYXS20142905.0728","fpage":"728","id":"60708537-16cf-4390-902e-806af55c85d2","issue":"5","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示 "},"keywords":[{"id":"f330fd2a-10ce-4e16-a154-dbbd8b93bbe0","keyword":"有机发光二极管","originalKeyword":"有机发光二极管"},{"id":"cd1da95c-3132-47b4-b478-25ec71ffbab8","keyword":"有源矩阵","originalKeyword":"有源矩阵"},{"id":"7fb15086-8c0d-45e0-85b6-7f5a9099ac1c","keyword":"像素补偿","originalKeyword":"像素补偿"}],"language":"zh","publisherId":"yjyxs201405014","title":"一种新型的OLED像素补偿驱动电路","volume":"29","year":"2014"},{"abstractinfo":"从分析影响PDP显示驱动芯片中高低压接口电路的工作速度的几个方面出发,提出一个改进了的高速高低压接口电路,从电路结构上改善了驱动芯片的频率特性,进而为等离子显示的高分辨率大屏幕化提供了有利条件.通过Hspice模拟验证了改进结构的速度性能比传统结构提高了5%~10%","authors":[{"authorName":"陈畅","id":"826b17e6-32d4-4f8d-a6ec-c4bbe8e9e30e","originalAuthorName":"陈畅"},{"authorName":"孙智林","id":"9fb78872-e710-423c-9a5c-12bca33182cd","originalAuthorName":"孙智林"},{"authorName":"孙伟锋","id":"2fe09af3-6983-4b92-87ab-62cf6b590f78","originalAuthorName":"孙伟锋"},{"authorName":"吴建辉","id":"78581930-206a-438a-85d4-2bb889671f6d","originalAuthorName":"吴建辉"}],"doi":"10.3969/j.issn.1007-2780.2004.03.011","fpage":"207","id":"94c25c26-101e-4b6c-a0eb-8dacfc96785f","issue":"3","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示 "},"keywords":[{"id":"65898524-60c8-43f0-8034-ddc02de7eac2","keyword":"PDP","originalKeyword":"PDP"},{"id":"885e6e1d-5182-4099-9e8d-2d5c2b6d6ec0","keyword":"电平转换电路","originalKeyword":"电平转换电路"},{"id":"b68fa6a2-0c95-45d6-83ca-ce70471a531c","keyword":"低压驱动电路","originalKeyword":"低压驱动电路"},{"id":"d6b233f8-eec7-46d4-a6db-50a11e0eb0fa","keyword":"高压输出驱动电路","originalKeyword":"高压输出驱动电路"},{"id":"708951fc-2ab4-413d-a614-1fcbf4c69dec","keyword":"高压LDMOS器件","originalKeyword":"高压LDMOS器件"}],"language":"zh","publisherId":"yjyxs200403011","title":"PDP显示驱动芯片的高速高低压接口电路的设计","volume":"19","year":"2004"},{"abstractinfo":"针对微波电路芯片焊接脱落问题,分析了InPbAg合金焊点的微观结构及成分,研究了InPbAg焊料芯片焊接的失效模式.找出了芯片脱落的主要原因:金膜表面污染、划痕、浸润不良、焊接气氛保护不足及应力导致焊点的结合强度不够致使芯片脱落.根据分析提出了改进意见,较好地解决了InPbAg合金焊接芯片脱落问题,支撑了微波电路的生产工艺.","authors":[{"authorName":"马丽丽","id":"d32008aa-7659-4afc-a66f-1a04f44698cf","originalAuthorName":"马丽丽"},{"authorName":"包生祥","id":"0c1da830-14de-4a48-b72a-eb139fdab3c4","originalAuthorName":"包生祥"},{"authorName":"杜之波","id":"70dabf0f-9e27-481e-a854-432e1c86a0ff","originalAuthorName":"杜之波"},{"authorName":"王艳芳","id":"e89030fb-bfff-4f3e-b849-f92bd804f56e","originalAuthorName":"王艳芳"},{"authorName":"李世岚","id":"b6ebb98c-b322-451d-8cd9-b3ca35e1cb8a","originalAuthorName":"李世岚"},{"authorName":"彭晶","id":"c182e307-20a6-42ee-a974-4cdbac51fb4d","originalAuthorName":"彭晶"}],"doi":"","fpage":"142","id":"04ce44c5-f8fc-4f3f-ba3b-a19eabc36e54","issue":"7","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"3a45f167-f93b-40fa-b607-01e8dfe89445","keyword":"InPbAg合金","originalKeyword":"InPbAg合金"},{"id":"4eb82d3e-8f6d-4060-a034-9d16d917ef39","keyword":"焊点","originalKeyword":"焊点"},{"id":"9551ae78-f6ab-46ad-a581-8d0d2adc32e6","keyword":"微观结构","originalKeyword":"微观结构"},{"id":"8e6c18ff-a178-4cab-ab19-9bbce84efe9e","keyword":"成分","originalKeyword":"成分"},{"id":"2b37813f-34d7-41c6-8d2d-ebce882c3a61","keyword":"浸润不良","originalKeyword":"浸润不良"},{"id":"bb98eccb-1aba-42fd-a033-dd75c3e5d6b2","keyword":"应力","originalKeyword":"应力"}],"language":"zh","publisherId":"cldb200707039","title":"微波电路元件中InPbAg合金焊点失效分析","volume":"21","year":"2007"},{"abstractinfo":"本文讨论了超导隧道结(SIS)从零电压态跃迁到正常态过程的量子特征.对SIS结的临界电流的统计分布测量的可行性作了探讨.由于SIS结的临界电流是温度敏感的量,并且,其量子跃迁的电流变化很小, 因此,对温度的稳定性和测量的精度均要求很高.我们提出了一种改进的以测量时间间隔的方法取代直接测量临界电流的方法的测量方案,去测量SIS结从零电压态跃迁到正常态过程临界电流变化的统计分布.电路的计算机模拟表明,这种方法较直接法有更好的精度. 实验上的测量在准备中.","authors":[{"authorName":"吉争鸣","id":"a0f3dbb7-40a2-4519-8e6a-56b3fae74acc","originalAuthorName":"吉争鸣"},{"authorName":"孙国柱","id":"de17e98c-8c6f-4012-b564-61cf394767b1","originalAuthorName":"孙国柱"},{"authorName":"范世雄","id":"8cc5ca1f-ffed-443d-9998-63aaa7738ff8","originalAuthorName":"范世雄"},{"authorName":"杨名","id":"fa4b13e9-0844-4860-bcf0-7184f04a8715","originalAuthorName":"杨名"},{"authorName":"许伟伟","id":"fb7e0821-5715-4ea3-86ad-32e9599c39d9","originalAuthorName":"许伟伟"},{"authorName":"吴培亨","id":"7e271bf8-a2b3-4421-a935-eec4f8e8ccc4","originalAuthorName":"吴培亨"}],"doi":"10.3969/j.issn.1000-3258.2003.z2.002","fpage":"298","id":"28fb282c-69bc-4116-be88-8b7a1d47cb8b","issue":"z2","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报 "},"keywords":[{"id":"a27917cd-48e7-4e97-844e-4d42cee5ec26","keyword":"","originalKeyword":""}],"language":"zh","publisherId":"dwwlxb2003z2002","title":"量子态统计测量电路探讨","volume":"25","year":"2003"}],"totalpage":630,"totalrecord":6292}