{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"为了进一步研究钛材表面TiO2微弧氧化<span style=\"color:red\">膜</span><span style=\"color:red\">的</span><span style=\"color:red\">生长过程</span><span style=\"color:red\">和</span><span style=\"color:red\">生长</span><span style=\"color:red\">模式</span>,采用物理分析技术分析了其微弧氧化<span style=\"color:red\">过程</span>中不同放电阶段<span style=\"color:red\">膜</span>表面<span style=\"color:red\">的</span>形貌、<span style=\"color:red\">膜</span>层厚度、相成分、表面粗糙度<span style=\"color:red\">和</span>硬度<span style=\"color:red\">的</span>变化.结果表明:TiO2多孔<span style=\"color:red\">膜</span>最初以孤立<span style=\"color:red\">的</span>岛状<span style=\"color:red\">生长</span><span style=\"color:red\">模式</span><span style=\"color:red\">生长</span>,随微弧氧化反应<span style=\"color:red\">的</span>进行,孤立<span style=\"color:red\">的</span>岛状氧化<span style=\"color:red\">膜</span>彼此相连接,<span style=\"color:red\">膜</span>表面形貌<span style=\"color:red\">和</span>厚度逐渐趋于一致,氧化<span style=\"color:red\">膜</span><span style=\"color:red\">的</span>孔径、厚度、粗糙度<span style=\"color:red\">和</span>硬度均有增加;<span style=\"color:red\">膜</span><span style=\"color:red\">的</span>相成分由亚稳<span style=\"color:red\">的</span>锐钛矿向高温下更加稳定<span style=\"color:red\">的</span>金红石转变,羟基磷灰石(HA)<span style=\"color:red\">的</span>量逐渐增加;TiO2<span style=\"color:red\">膜</span>所呈现<span style=\"color:red\">的</span>特性与微弧氧化<span style=\"color:red\">过程</span>中不同阶段<span style=\"color:red\">的</span>放电特性密切相关.","authors":[{"authorName":"刘世敏","id":"7c2e86a9-e815-45fa-867a-969db92723b9","originalAuthorName":"刘世敏"},{"authorName":"李宝娥","id":"cef0d854-69f4-4aa2-90eb-e95bc11426a6","originalAuthorName":"李宝娥"},{"authorName":"乔志霞","id":"31b5ec3b-1e95-4d57-a371-b2eca55b94e4","originalAuthorName":"乔志霞"}],"doi":"","fpage":"6","id":"087975be-532a-4776-a228-2c4e59ae6bdd","issue":"1","journal":{"abbrevTitle":"CLBH","coverImgSrc":"journal/img/cover/CLBH.jpg","id":"7","issnPpub":"1001-1560","publisherId":"CLBH","title":"材料保护"},"keywords":[{"id":"094a44d6-69c6-46a7-b8c4-c164e03f0a7d","keyword":"TiO2微孤氧化<span style=\"color:red\">膜</span>","originalKeyword":"TiO2微孤氧化膜"},{"id":"5154b7a8-0e1c-43bc-b876-d56e278ed54c","keyword":"钛材","originalKeyword":"钛材"},{"id":"c1746e94-1649-4162-968c-bb84caa8c7fc","keyword":"<span style=\"color:red\">膜</span><span style=\"color:red\">的</span><span style=\"color:red\">生长</span><span style=\"color:red\">模式</span><span style=\"color:red\">和</span><span style=\"color:red\">过程</span>","originalKeyword":"膜的生长模式和过程"},{"id":"db4f50df-b8ca-4f9b-960e-165e9ca3b3c0","keyword":"<span style=\"color:red\">膜</span><span style=\"color:red\">的</span>特性","originalKeyword":"膜的特性"}],"language":"zh","publisherId":"clbh201601002","title":"TiO2微弧氧化<span style=\"color:red\">膜</span><span style=\"color:red\">的</span><span style=\"color:red\">生长过程</span>及特性变化","volume":"49","year":"2016"},{"abstractinfo":"采用直流反应磁控溅射法,在Si(100)基片表面沉积厚度为1000 nm<span style=\"color:red\">的</span>二氧化钒<span style=\"color:red\">膜</span>.利用X射线衍射(XRD)仪和扫描电镜(SEM)分析<span style=\"color:red\">膜</span><span style=\"color:red\">的</span>晶相<span style=\"color:red\">和</span>形貌,观察到二氧化钒<span style=\"color:red\">膜</span><span style=\"color:red\">的</span>一种新<span style=\"color:red\">的</span><span style=\"color:red\">生长</span><span style=\"color:red\">模式</span>.X射线衍射分析表明生成<span style=\"color:red\">的</span><span style=\"color:red\">膜</span>为典型<span style=\"color:red\">的</span>多晶二氧化钒<span style=\"color:red\">膜</span>,其(200)晶面衍射峰较强.扫描电镜(SEM)分析表明,随着<span style=\"color:red\">膜</span>厚<span style=\"color:red\">的</span>增加,<span style=\"color:red\">膜</span>表面晶粒增大,<span style=\"color:red\">膜</span>表面<span style=\"color:red\">的</span>晶粒呈现出独特<span style=\"color:red\">的</span>\"纺锤\"状或\"棒\"状;<span style=\"color:red\">膜</span>具有明显<span style=\"color:red\">的</span> \"柱\"状<span style=\"color:red\">生长</span>特征,在<span style=\"color:red\">膜</span>厚380 nm以上时,\"柱状\"晶<span style=\"color:red\">生长</span>速率快速提高.样品<span style=\"color:red\">的</span>阻温特性分析表明,生成<span style=\"color:red\">的</span>二氧化钒<span style=\"color:red\">膜</span>具有典型<span style=\"color:red\">的</span>金属-半导体相变特征.","authors":[{"authorName":"魏雄邦","id":"6babb8b4-2189-4356-afa6-3c42a96c76f5","originalAuthorName":"魏雄邦"},{"authorName":"蒋亚东","id":"a5bef547-2608-4aae-997f-660e53193b86","originalAuthorName":"蒋亚东"},{"authorName":"吴志明","id":"387a5f73-79e3-46fe-b4f1-2d442292213a","originalAuthorName":"吴志明"},{"authorName":"廖家轩","id":"d3e6bcdd-3390-4669-9124-7f5e2b5f5ab0","originalAuthorName":"廖家轩"},{"authorName":"贾宇明","id":"fec734e7-e4e9-4732-9738-f2530a6067ce","originalAuthorName":"贾宇明"},{"authorName":"田忠","id":"11ebfad8-0ce7-4b5d-b65b-99ed95d8b4e0","originalAuthorName":"田忠"}],"doi":"","fpage":"289","id":"bfe10d6d-bb97-4ba4-a1d3-14743a556901","issue":"z1","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"81b220f7-e4a1-4722-b9d7-f07e05405f6a","keyword":"二氧化钒<span style=\"color:red\">膜</span>","originalKeyword":"二氧化钒膜"},{"id":"933b68a6-77a5-478a-9c11-fdebb2fed619","keyword":"<span style=\"color:red\">膜</span>厚","originalKeyword":"膜厚"},{"id":"2fbdf03c-85c2-478d-9e2a-d2f2ca7bd080","keyword":"直流磁控溅射","originalKeyword":"直流磁控溅射"}],"language":"zh","publisherId":"xyjsclygc2010z1070","title":"一种二氧化钒<span style=\"color:red\">膜</span><span style=\"color:red\">的</span>新<span style=\"color:red\">的</span><span style=\"color:red\">生长</span><span style=\"color:red\">模式</span>","volume":"39","year":"2010"},{"abstractinfo":"采用直流热阴极PCVD( Plasma chemical vapor deposition)法间歇<span style=\"color:red\">生长</span><span style=\"color:red\">模式</span>制备金刚石<span style=\"color:red\">膜</span>,通过加入周期性<span style=\"color:red\">的</span>刻蚀阶段清除金刚石<span style=\"color:red\">膜</span>在一定<span style=\"color:red\">生长</span>期中形成<span style=\"color:red\">的</span>石墨<span style=\"color:red\">和</span>非晶碳等杂质,实现了金刚石<span style=\"color:red\">膜</span><span style=\"color:red\">生长</span><span style=\"color:red\">的</span>质量调控.间歇式<span style=\"color:red\">生长过程</span>分为沉积阶段<span style=\"color:red\">和</span>刻蚀阶段,两个阶段交替进行.采用Raman光谱、SEM<span style=\"color:red\">和</span>XRD对所制金刚石<span style=\"color:red\">膜</span><span style=\"color:red\">的</span>品质进行了表征,并与同样<span style=\"color:red\">生长</span>条件下连续<span style=\"color:red\">生长</span><span style=\"color:red\">模式</span>制备<span style=\"color:red\">的</span>金刚石<span style=\"color:red\">膜</span>样品进行了比较.结果表明,当单个<span style=\"color:red\">生长</span>周期为30m in(沉积时间为20 min、刻蚀时间为10min)时,直流热阴极PCVD法间歇<span style=\"color:red\">生长</span><span style=\"color:red\">模式</span>制备<span style=\"color:red\">的</span>金刚石<span style=\"color:red\">膜</span>中<span style=\"color:red\">的</span>非金刚石相杂质含量低于连续间歇<span style=\"color:red\">生长</span><span style=\"color:red\">模式</span>制备<span style=\"color:red\">的</span>金刚石<span style=\"color:red\">膜</span>.","authors":[{"authorName":"姜宏伟","id":"04232a4f-5543-49b2-a69d-92201b43ed9c","originalAuthorName":"姜宏伟"},{"authorName":"黄海亮","id":"2633b5ee-21a6-490a-bc25-14b7bc429e19","originalAuthorName":"黄海亮"},{"authorName":"贾相华","id":"b7d1ae0a-cd82-44c5-a8d7-30a01480f48a","originalAuthorName":"贾相华"},{"authorName":"尹龙承","id":"0bd6bb80-e4bb-4f97-be2d-2a9981490a2b","originalAuthorName":"尹龙承"},{"authorName":"陈玉强","id":"7f79aebd-880f-4f6f-8acf-974f7587e6b8","originalAuthorName":"陈玉强"},{"authorName":"彭鸿雁","id":"3e2f5922-f7b3-49ba-913d-16aa61de3efb","originalAuthorName":"彭鸿雁"}],"doi":"","fpage":"307","id":"6e725bbd-a828-45a3-adb1-61c045a6eda5","issue":"4","journal":{"abbrevTitle":"XXTCL","coverImgSrc":"journal/img/cover/XXTCL.jpg","id":"70","issnPpub":"1007-8827","publisherId":"XXTCL","title":"新型炭材料"},"keywords":[{"id":"659b8046-5657-406c-bf0a-4f16d5d101ae","keyword":"直流热阴极","originalKeyword":"直流热阴极"},{"id":"299381bf-4dbe-4078-960c-44c9782815c8","keyword":"CVD","originalKeyword":"CVD"},{"id":"88e9ec76-1850-4c35-8061-b24693a1d2d4","keyword":"间歇<span style=\"color:red\">生长</span><span style=\"color:red\">模式</span>","originalKeyword":"间歇生长模式"},{"id":"354c7305-1b0d-4ea6-b45e-416484f2d765","keyword":"金刚石<span style=\"color:red\">膜</span>","originalKeyword":"金刚石膜"}],"language":"zh","publisherId":"xxtcl201204011","title":"直流热阴极PCVD法间歇<span style=\"color:red\">生长</span><span style=\"color:red\">模式</span>制备金刚石<span style=\"color:red\">膜</span>","volume":"27","year":"2012"},{"abstractinfo":"利用金属在磷化液中腐蚀电流或腐蚀电压<span style=\"color:red\">的</span>变化研究磷化<span style=\"color:red\">膜</span><span style=\"color:red\">的</span><span style=\"color:red\">生长过程</span><span style=\"color:red\">和</span>磷化<span style=\"color:red\">膜</span>完成<span style=\"color:red\">的</span>时间是一种简单、快速<span style=\"color:red\">和</span>方便<span style=\"color:red\">的</span>方法.用这种方法不仅能很容易地分析金属件在各种磷化液中<span style=\"color:red\">的</span>全部变化行为,而且可以很方便地确定最佳操作时间.","authors":[{"authorName":"周谟银","id":"cac120fb-0d0e-4514-bc28-8b2bb84d134a","originalAuthorName":"周谟银"}],"categoryName":"|","doi":"","fpage":"341","id":"4bdc4342-6b70-4102-b4c1-a5dbaf7b7fdd","issue":"4","journal":{"abbrevTitle":"FSKXYFHJS","coverImgSrc":"journal/img/cover/FSKXYFHJS.jpg","id":"24","issnPpub":"1002-6495","publisherId":"FSKXYFHJS","title":"腐蚀科学与防护技术"},"keywords":[{"id":"4335a14a-ef5d-49cd-8324-ffdb7c86e6e2","keyword":"电压","originalKeyword":"电压"},{"id":"bd38830a-73e5-4829-9855-32db5d8cc591","keyword":"null","originalKeyword":"null"},{"id":"c67a61ce-79c6-4c6f-bb17-a4c456ae9bbd","keyword":"null","originalKeyword":"null"},{"id":"55c20043-6fd9-4dea-b506-66853977527d","keyword":"null","originalKeyword":"null"}],"language":"zh","publisherId":"1002-6495_1995_4_4","title":"利用电流<span style=\"color:red\">和</span>电压<span style=\"color:red\">的</span>变化研究磷化<span style=\"color:red\">膜</span><span style=\"color:red\">的</span><span style=\"color:red\">生长过程</span>","volume":"7","year":"1995"},{"abstractinfo":"以磷酸盐化学转化<span style=\"color:red\">膜</span>为研究体系,采用SEM、XRD、OCP等分析方法及检测手段,研究AZ91D镁合金系磷酸盐化学转化<span style=\"color:red\">膜</span><span style=\"color:red\">的</span>成<span style=\"color:red\">膜</span>机理、<span style=\"color:red\">膜</span>层结构及<span style=\"color:red\">生长过程</span>.研究发现AZ91D镁合金在磷化液中成<span style=\"color:red\">膜</span><span style=\"color:red\">过程</span>分5个阶段:初始成核(1～5s)、基体快速溶解(5～60s)、晶体快速<span style=\"color:red\">生长</span>(1～2min)、<span style=\"color:red\">膜</span>层稳态<span style=\"color:red\">生长</span>(2～10min)<span style=\"color:red\">和</span><span style=\"color:red\">膜</span>层沉积溶解平衡阶段(10min以后).AZ91D镁合金表面<span style=\"color:red\">的</span>磷酸盐晶核<span style=\"color:red\">的</span>形成并非在金属进入溶液<span style=\"color:red\">的</span>最初时刻一次形成,是分批形成.最先形成<span style=\"color:red\">的</span>晶核逐渐长大,新<span style=\"color:red\">的</span>晶核不断生成,磷酸盐晶粒对其表面<span style=\"color:red\">的</span>覆盖度逐渐增大,直至各个晶粒逐渐长大相互接界,将其表面完全覆盖,结晶<span style=\"color:red\">过程</span>结束.晶核<span style=\"color:red\">的</span>形成未优先发生在基体金属<span style=\"color:red\">的</span>晶界上,随着晶核<span style=\"color:red\">的</span><span style=\"color:red\">生长</span><span style=\"color:red\">和</span>外延而形成磷化<span style=\"color:red\">膜</span>.","authors":[{"authorName":"胡伟","id":"3154e47b-2265-47c4-8842-a5e92ff11116","originalAuthorName":"胡伟"},{"authorName":"徐淑强","id":"c92b09f4-44e3-4dbf-a30a-507a1d9a5275","originalAuthorName":"徐淑强"},{"authorName":"李青","id":"f2f53775-d955-46ec-893f-082e5bd4acc2","originalAuthorName":"李青"}],"doi":"","fpage":"260","id":"91875474-c311-4530-82da-fe65c1716985","issue":"2","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"0f43b205-530a-4be5-bb56-8f486ea159b2","keyword":"AZ91D镁合金","originalKeyword":"AZ91D镁合金"},{"id":"11d83c38-28bc-4678-9e85-612941fcbee4","keyword":"磷化<span style=\"color:red\">膜</span>","originalKeyword":"磷化膜"},{"id":"8355735d-d97b-4f2a-b7ae-8eaff749e8fa","keyword":"成<span style=\"color:red\">膜</span>机理","originalKeyword":"成膜机理"},{"id":"78c834d9-3a65-4fb4-8601-f8dd6089db1c","keyword":"电化学测试","originalKeyword":"电化学测试"}],"language":"zh","publisherId":"gncl201002023","title":"AZ91D镁合金锌系磷化<span style=\"color:red\">膜</span>成<span style=\"color:red\">膜</span>机理<span style=\"color:red\">和</span><span style=\"color:red\">生长过程</span><span style=\"color:red\">的</span>研究","volume":"41","year":"2010"},{"abstractinfo":"为明确溅射偏压对ITO薄膜性质<span style=\"color:red\">的</span>影响,用射频磁控溅射法于室温在玻璃衬底制备出ITO透明导电薄膜,研究了不同偏压下ITO薄膜<span style=\"color:red\">的</span><span style=\"color:red\">生长</span><span style=\"color:red\">模式</span>、光学<span style=\"color:red\">和</span>电学性能.结果表明：随着偏压<span style=\"color:red\">的</span>增加,薄膜沉积<span style=\"color:red\">模式</span>经历了沉积、沉积<span style=\"color:red\">和</span>扩散、表面脱附3种方式;AFM<span style=\"color:red\">和</span>SEM显示,偏压为100 V时,<span style=\"color:red\">膜</span>层表面光洁、均匀,粗糙度最小,均方根粗糙度为1.61 nm;XRD分析表明偏压会影响与薄膜<span style=\"color:red\">的</span>择优取向,偏压为100 V时,薄膜晶粒取向为（222）面;薄膜偏压为120 V时,薄膜<span style=\"color:red\">的</span>光电性能最佳,电阻率最低为2.59×10-4Ω.cm,可见光区<span style=\"color:red\">的</span>平均透过率在85%以上;偏压<span style=\"color:red\">的</span>大小使薄膜<span style=\"color:red\">的</span>吸收边发生了＂蓝移＂或＂红移＂.","authors":[{"authorName":"马瑞新","id":"9bd73bbf-2061-4cea-b768-ab8bfceb2e73","originalAuthorName":"马瑞新"},{"authorName":"李士娜","id":"637ffca6-9b58-4375-bda9-6d83e50985de","originalAuthorName":"李士娜"},{"authorName":"锁国权","id":"add9f03d-7c6e-4b74-bb5a-daf9fd409a38","originalAuthorName":"锁国权"},{"authorName":"任磊","id":"92f1566f-962e-4a0e-8447-5325b2b31a01","originalAuthorName":"任磊"}],"doi":"","fpage":"65","id":"070148b2-267d-4f9d-b2d3-c29b8f30dc8b","issue":"4","journal":{"abbrevTitle":"CLKXYGY","coverImgSrc":"journal/img/cover/CLKXYGY.jpg","id":"14","issnPpub":"1005-0299","publisherId":"CLKXYGY","title":"材料科学与工艺"},"keywords":[{"id":"01f26645-dfb9-4d07-a307-b17f1eb8ea12","keyword":"ITO薄膜","originalKeyword":"ITO薄膜"},{"id":"5403e79c-0a50-4588-9b1a-f2c523a1f6ed","keyword":"偏压","originalKeyword":"偏压"},{"id":"6ba22a4f-fb99-468d-aefa-338ad24e3419","keyword":"<span style=\"color:red\">生长</span><span style=\"color:red\">模式</span>","originalKeyword":"生长模式"},{"id":"bece0d6b-4fa6-4bf8-b241-990bb2a53e13","keyword":"微观结构","originalKeyword":"微观结构"},{"id":"de6280c5-8301-40cd-b7c4-b2af8a48b835","keyword":"光电性能","originalKeyword":"光电性能"}],"language":"zh","publisherId":"clkxygy201204012","title":"偏压对ITO薄膜<span style=\"color:red\">生长</span><span style=\"color:red\">模式</span><span style=\"color:red\">和</span>光电性能<span style=\"color:red\">的</span>影响","volume":"20","year":"2012"},{"abstractinfo":"对有机/无机光电探测器PTCDA/p-Si样品<span style=\"color:red\">的</span>表面进行得AFM扫描看出,PTCDA呈岛状<span style=\"color:red\">生长</span>,各岛成圆丘状,岛<span style=\"color:red\">的</span>分布不均匀,PTCDA层中存在大量缺陷.原因是p-Si(100)衬底<span style=\"color:red\">的</span>表面原子悬挂键<span style=\"color:red\">的</span>作用,使硅原子横向移动满足键合需要形成台阶<span style=\"color:red\">和</span>其它缺陷引起<span style=\"color:red\">的</span>.将样品表面<span style=\"color:red\">的</span>XPS全谱及精细谱与表面<span style=\"color:red\">的</span>AFM扫描图进行对比分析,得出PTCDA在p-Si基底上<span style=\"color:red\">的</span><span style=\"color:red\">生长</span><span style=\"color:red\">模式</span>,即:PTCDA首先在缺陷处聚集,形成许多三维岛状<span style=\"color:red\">的</span>PTCDA晶核,然后在PTCDA离域大π键<span style=\"color:red\">的</span>作用下,相邻<span style=\"color:red\">的</span>两层PTCDA分子存在一定程度<span style=\"color:red\">的</span>交叠,最终形成岛状结构.与硅衬底原子结合<span style=\"color:red\">的</span><span style=\"color:red\">过程</span>为:苝环与缺陷处<span style=\"color:red\">的</span>Si原子结合,而酸酐基团与表面完整处<span style=\"color:red\">的</span>Si结合.结合时,苝环结构保持不变,而酸酐基团与Si发生化学反应,使酸酐中<span style=\"color:red\">的</span>CO键断开,形成SiCO<span style=\"color:red\">和</span>硅氧化物.对PTCDA/p-Si样品<span style=\"color:red\">的</span>界面<span style=\"color:red\">的</span>XPS全扫描谱<span style=\"color:red\">和</span>精细图谱进行分析后,进一步验证了PTCDA在p-Si基底上<span style=\"color:red\">的</span><span style=\"color:red\">生长</span><span style=\"color:red\">模式</span>.","authors":[{"authorName":"宋珍","id":"5db96fe8-68d0-48cf-94ce-e71c30929f26","originalAuthorName":"宋珍"},{"authorName":"刘凤敏","id":"1eafb4dc-96aa-4495-aea3-6b526da01e6b","originalAuthorName":"刘凤敏"},{"authorName":"欧谷平","id":"d488b735-fd49-4880-a924-de904d89d4bf","originalAuthorName":"欧谷平"},{"authorName":"甘润今","id":"7ada4d0a-77b3-45c8-887f-cf59c8a92b1e","originalAuthorName":"甘润今"},{"authorName":"张福甲","id":"96ee2174-4047-4051-a10b-7b2ff52a1098","originalAuthorName":"张福甲"}],"doi":"","fpage":"1041","id":"4b88385d-5223-4253-8223-e94acdd76bef","issue":"7","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"03d36b57-7c5d-42e3-9c82-5b4a5116680e","keyword":"PTCDA","originalKeyword":"PTCDA"},{"id":"2dafd772-9edf-4bef-80e2-d0267ae9ff1d","keyword":"<span style=\"color:red\">生长</span><span style=\"color:red\">模式</span>","originalKeyword":"生长模式"},{"id":"c5349699-81e7-48c2-9616-2e5c95bd33e7","keyword":"AFM","originalKeyword":"AFM"},{"id":"a0f9a75b-7986-4cb7-98ba-de54d1a0a3c4","keyword":"XPS","originalKeyword":"XPS"}],"language":"zh","publisherId":"gncl200507021","title":"p-Si基PTCDA<span style=\"color:red\">生长</span><span style=\"color:red\">模式</span><span style=\"color:red\">的</span>AFM<span style=\"color:red\">和</span>XPS研究","volume":"36","year":"2005"},{"abstractinfo":"运用电化学交流阻抗分析(EIS)、电量测定并结合原子力显微镜(AFM)研究了\n304不锈钢载波钝化<span style=\"color:red\">膜</span><span style=\"color:red\">的</span><span style=\"color:red\">生长过程</span>. 研究了在交变电场下钝化<span style=\"color:red\">膜</span>层中微孔<span style=\"color:red\">的</span>\n产生及其对<span style=\"color:red\">膜</span>层<span style=\"color:red\">生长</span><span style=\"color:red\">的</span>作用; 并运用钝化<span style=\"color:red\">膜</span><span style=\"color:red\">生长过程</span>中<span style=\"color:red\">的</span>电量--时间响应和\n原子力显微镜扫描分析对不锈钢载波钝化<span style=\"color:red\">膜</span><span style=\"color:red\">的</span><span style=\"color:red\">生长</span>机理进行验证分析. 结果\n表明: 载波钝化<span style=\"color:red\">膜</span>具有很高<span style=\"color:red\">的</span><span style=\"color:red\">生长</span>速度是由于交变电场对<span style=\"color:red\">膜</span>层<span style=\"color:red\">的</span>作用改变了\n<span style=\"color:red\">膜</span>层<span style=\"color:red\">的</span><span style=\"color:red\">生长</span>方式, 使之不同于直流钝化条件下钝化<span style=\"color:red\">膜</span><span style=\"color:red\">的</span><span style=\"color:red\">生长过程</span>.","authors":[{"authorName":"张俊喜","id":"fea66eb9-7547-48c5-8624-4fdea4d9aa96","originalAuthorName":"张俊喜"},{"authorName":"颜立成","id":"cc5da707-93c4-4c09-82dd-475e426855ca","originalAuthorName":"颜立成"},{"authorName":"魏增福","id":"64b8b6a2-e3ba-4cf7-880e-13332313ed62","originalAuthorName":"魏增福"},{"authorName":"乔亦男","id":"d969728e-01bd-475f-9a94-8624635d61c0","originalAuthorName":"乔亦男"},{"authorName":"曹楚南","id":"8837c3f3-5e5d-4032-804f-8e64886c6639","originalAuthorName":"曹楚南"},{"authorName":"张鉴清","id":"dfb95f14-2ad8-4b23-b67b-b9eed107ef4d","originalAuthorName":"张鉴清"}],"categoryName":"|","doi":"","fpage":"404","id":"fcdbf56f-7828-4da8-9cc9-3943bd61a6a2","issue":"4","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"601c5990-51d3-436b-9f04-4223364c7b4b","keyword":"不锈钢","originalKeyword":"不锈钢"},{"id":"62490ac6-3339-4d46-b55a-f033e32e891b","keyword":"alternating voltage passivation","originalKeyword":"alternating voltage passivation"},{"id":"a8870ac8-de3d-42ed-ad73-f633295e98c3","keyword":"null","originalKeyword":"null"}],"language":"zh","publisherId":"0412-1961_2004_4_14","title":"不锈钢载波钝化<span style=\"color:red\">膜</span><span style=\"color:red\">的</span><span style=\"color:red\">生长过程</span>","volume":"40","year":"2004"},{"abstractinfo":"运用电化学交流阻抗分析(EIS)、电量测定并结合原子力显微镜(AFM)研究了304不锈钢载波钝化<span style=\"color:red\">膜</span><span style=\"color:red\">的</span><span style=\"color:red\">生长过程</span>.研究了在交变电场下钝化<span style=\"color:red\">膜</span>层中微孔<span style=\"color:red\">的</span>产生及其对<span style=\"color:red\">膜</span>层<span style=\"color:red\">生长</span><span style=\"color:red\">的</span>作用;并运用钝化<span style=\"color:red\">膜</span><span style=\"color:red\">生长过程</span>中<span style=\"color:red\">的</span>电量时间响应和原子力显微镜扫描分析对不锈钢载波钝化<span style=\"color:red\">膜</span><span style=\"color:red\">的</span><span style=\"color:red\">生长</span>机理进行验证分析.结果表明:载波钝化<span style=\"color:red\">膜</span>具有很高<span style=\"color:red\">的</span><span style=\"color:red\">生长</span>速度是由于交变电场对<span style=\"color:red\">膜</span>层<span style=\"color:red\">的</span>作用改变了<span style=\"color:red\">膜</span>层<span style=\"color:red\">的</span><span style=\"color:red\">生长</span>方式,使之不同于直流钝化条件下钝化<span style=\"color:red\">膜</span><span style=\"color:red\">的</span><span style=\"color:red\">生长过程</span>.","authors":[{"authorName":"张俊喜","id":"79c13fcb-64a9-4c47-8a80-067e55b2eaae","originalAuthorName":"张俊喜"},{"authorName":"颜立成","id":"1a245a58-1973-45c0-82b5-0db3e2fc02be","originalAuthorName":"颜立成"},{"authorName":"魏增福","id":"3a10caf3-3a5e-4fea-8d2d-fc61b01fa908","originalAuthorName":"魏增福"},{"authorName":"乔亦男","id":"cbf8dd63-8587-48bb-8a5d-fce8525a0c5f","originalAuthorName":"乔亦男"},{"authorName":"曹楚南","id":"f75aa8f9-d4ad-41af-98e3-9cb922b2bf48","originalAuthorName":"曹楚南"},{"authorName":"张鉴清","id":"588c4a09-1d72-400d-8e06-66b3755e6423","originalAuthorName":"张鉴清"}],"doi":"10.3321/j.issn:0412-1961.2004.04.015","fpage":"404","id":"d496e1b3-f709-4774-b5a1-b89a6bcf0e18","issue":"4","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"288e1b62-f75d-498e-83c8-70c09b75045a","keyword":"不锈钢","originalKeyword":"不锈钢"},{"id":"f0a9c295-3a7c-49a1-9602-7c2424777e8c","keyword":"载波钝化","originalKeyword":"载波钝化"},{"id":"11368341-a015-4b25-a15c-a64919945dcf","keyword":"<span style=\"color:red\">生长</span>机理","originalKeyword":"生长机理"},{"id":"21f81402-257a-4f77-ac3c-1c74bd3d8ab9","keyword":"成孔率","originalKeyword":"成孔率"}],"language":"zh","publisherId":"jsxb200404015","title":"不锈钢载波钝化<span style=\"color:red\">膜</span><span style=\"color:red\">的</span><span style=\"color:red\">生长过程</span>","volume":"40","year":"2004"},{"abstractinfo":"采用直流热阴极PCVD技术,经过<span style=\"color:red\">生长</span>温度<span style=\"color:red\">的</span>周期性调整,达到清除多余游离碳<span style=\"color:red\">和</span>刻蚀非金刚石相<span style=\"color:red\">的</span>目<span style=\"color:red\">的</span>,实现了在高甲烷浓度条件下制备纳米金刚石<span style=\"color:red\">膜</span>.金刚石<span style=\"color:red\">膜</span><span style=\"color:red\">的</span><span style=\"color:red\">生长过程</span>分为沉积阶段<span style=\"color:red\">和</span>刻蚀去除阶段,沉积时间为15min,刻蚀时间为5min,<span style=\"color:red\">生长</span>周期为20min,总<span style=\"color:red\">的</span>沉积时间为6h.采用拉曼光谱仪、SEM<span style=\"color:red\">和</span>XRD分析仪对样品进行了分析,结果显示样品具有纳米金刚石<span style=\"color:red\">膜</span><span style=\"color:red\">的</span>基本特征.研究表明,在高甲烷浓度条件下,直流热阴极PCVD间歇<span style=\"color:red\">生长</span><span style=\"color:red\">模式</span>可有效去除<span style=\"color:red\">生长</span>腔内<span style=\"color:red\">的</span>游离碳成分,实现正常放电激励,维持正常<span style=\"color:red\">生长</span>,制备出纳米金刚石<span style=\"color:red\">膜</span>.","authors":[{"authorName":"姜宏伟","id":"5e8b7087-0df9-4ab4-a8e0-1a644b546fe0","originalAuthorName":"姜宏伟"},{"authorName":"彭鸿雁","id":"2ad69bda-8397-43a5-b4bf-10b26063e310","originalAuthorName":"彭鸿雁"},{"authorName":"陈玉强","id":"830c8601-c9e5-4ae1-b52a-2556e0147b31","originalAuthorName":"陈玉强"},{"authorName":"祁文涛","id":"28ef5e18-2b98-4332-aeac-ba2687c7ee49","originalAuthorName":"祁文涛"},{"authorName":"王军","id":"90361050-bcbd-4f0c-9399-9f124ca73885","originalAuthorName":"王军"},{"authorName":"曲晏宏","id":"ce2526e9-daf1-4b5e-9329-afae00b96a76","originalAuthorName":"曲晏宏"}],"doi":"","fpage":"67","id":"b0887d0e-dc64-4d11-93d8-f87731cab181","issue":"z1","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"dab8a0a8-2726-436f-882e-62398d531e0e","keyword":"直流热阴极PCVD","originalKeyword":"直流热阴极PCVD"},{"id":"79979c0a-c3e1-435d-ba7c-f297225c99f8","keyword":"高甲烷浓度","originalKeyword":"高甲烷浓度"},{"id":"c44b2bd7-f6f2-4752-b31a-4e5c203e8c73","keyword":"纳米金刚石<span style=\"color:red\">膜</span>","originalKeyword":"纳米金刚石膜"},{"id":"6c586f0c-68a3-4493-9e81-ae43f70f7e4b","keyword":"间歇式","originalKeyword":"间歇式"}],"language":"zh","publisherId":"cldb2010z1021","title":"间歇<span style=\"color:red\">生长</span><span style=\"color:red\">模式</span>高甲烷浓度制备纳米金刚石<span style=\"color:red\">膜</span>","volume":"24","year":"2010"}],"totalpage":21662,"totalrecord":216619}