{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"采用悬浮熔炼法合成了Zr1-xTixNiSn0.975Sb0.025(x = 0, 0.15, 0.25, 0.5)基<span style=\"color:red\">Half-Heusler</span>热电材料,X射线衍射结果表明所制备<span style=\"color:red\">合金</span>为单相.相对于常规方法,悬浮熔炼显著缩短了制备<span style=\"color:red\">Half-Heusler</span><span style=\"color:red\">合金</span>的时间.同时研究了Ti取代及不同热压条件对材料热电性能的影响.结果表明:ZrNiSn0.975Sb0.025<span style=\"color:red\">合金</span>进行A位取代可降低材料的热导率,而不会明显影响其热电性能.致密度可以影响材料的热电性能,适当的热压条件可以使<span style=\"color:red\">合金</span>的ZT值达到最大,约为0.45.","authors":[{"authorName":"姜广宇","id":"59ff2819-4561-49a0-8d9d-9dbf8b04b238","originalAuthorName":"姜广宇"},{"authorName":"徐绩","id":"ab5c4389-72e7-4fe3-b7cb-9788314135d0","originalAuthorName":"徐绩"},{"authorName":"赵波","id":"faf0df4d-721d-499b-bbb3-423950c26bd7","originalAuthorName":"赵波"},{"authorName":"蔚翠","id":"5d58cde6-e8b7-432e-8375-468885f204bc","originalAuthorName":"蔚翠"},{"authorName":"朱铁军","id":"51dedc0e-9ef3-4530-b0e4-688f56697dfe","originalAuthorName":"朱铁军"},{"authorName":"赵新兵","id":"e6b0791f-e944-4a01-a0b7-70004a99dd41","originalAuthorName":"赵新兵"}],"doi":"","fpage":"1831","id":"1e1fcf79-0221-4a31-8539-31bfb590f73b","issue":"10","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"e8a62a17-4514-47c1-b410-301048401552","keyword":"<span style=\"color:red\">Half-Heusler</span><span style=\"color:red\">合金</span>","originalKeyword":"Half-Heusler合金"},{"id":"e8b4bace-05eb-4e74-ba88-8a2d6f5507a9","keyword":"热电材料","originalKeyword":"热电材料"},{"id":"ceece8ff-2084-4f8c-80e5-d540fb544bad","keyword":"悬浮熔炼","originalKeyword":"悬浮熔炼"},{"id":"aa72db35-a3bc-477d-8c4d-2531452477f8","keyword":"热电性能","originalKeyword":"热电性能"}],"language":"zh","publisherId":"xyjsclygc200910032","title":"悬浮熔炼制备<span style=\"color:red\">Half-Heusler</span><span style=\"color:red\">合金</span>Zr1-xTixNiSn0.975Sb0.025及其热电性能","volume":"38","year":"2009"},{"abstractinfo":"介绍了最近几年在热电半导体材料领域里新出现的<span style=\"color:red\">half-Heusler</span>化合物的结构和研 究现状,比较了各化合物掺杂及等电子<span style=\"color:red\">合金</span>化前后的电与热传输参数的变化,并指出了该材料 的进一步研究方向.","authors":[{"authorName":"黄向阳","id":"d921cee4-d6f4-46f0-8410-14b773342d07","originalAuthorName":"黄向阳"},{"authorName":"徐政","id":"1e1cf392-dc7f-497f-8ee4-765a7b8d3c44","originalAuthorName":"徐政"},{"authorName":"陈立东","id":"62fd9458-008c-41ad-aab5-cef41c91eabe","originalAuthorName":"陈立东"}],"categoryName":"|","doi":"","fpage":"25","id":"902f2345-8db9-49c8-9a4f-1bf61ce4e27f","issue":"1","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"04de03eb-0a45-4647-be67-c2c3293096b0","keyword":"热电材料","originalKeyword":"热电材料"},{"id":"928b0415-508b-4df7-b267-be066fb96454","keyword":" <span style=\"color:red\">half-Heusler</span>","originalKeyword":" half-Heusler"},{"id":"cf7d6bc3-9e87-464e-afbd-ce53e775e9e6","keyword":" dimensionless figure of merit","originalKeyword":" dimensionless figure of merit"},{"id":"20d88efd-a6b6-4d94-ad11-59c94a87e0bc","keyword":" doping","originalKeyword":" doping"}],"language":"zh","publisherId":"1000-324X_2004_1_13","title":"<span style=\"color:red\">Half-Heusler</span>热电半导体材料","volume":"19","year":"2004"},{"abstractinfo":"介绍了最近几年在热电半导体材料领域里新出现的<span style=\"color:red\">half-Heusler</span>化合物的结构和研究现状,比较了各化合物掺杂及等电子<span style=\"color:red\">合金</span>化前后的电与热传输参数的变化,并指出了该材料的进一步研究方向.","authors":[{"authorName":"黄向阳","id":"83a4f898-4d97-4cf1-91f9-dda8c6f31f83","originalAuthorName":"黄向阳"},{"authorName":"徐政","id":"c4a3c4d9-3905-443d-88d5-97f349823ca3","originalAuthorName":"徐政"},{"authorName":"陈立东","id":"eddfcca1-e7e4-4bdb-b8bc-3ebd26552aa1","originalAuthorName":"陈立东"}],"doi":"10.3321/j.issn:1000-324X.2004.01.004","fpage":"25","id":"55f08b1d-303a-4852-802b-080730067be3","issue":"1","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"c764b0e5-86dd-4c7d-9bae-28dcebb98c3e","keyword":"热电材料","originalKeyword":"热电材料"},{"id":"355e5777-0898-4dea-af36-db31522e54eb","keyword":"<span style=\"color:red\">half-Heusler</span>","originalKeyword":"half-Heusler"},{"id":"5b28f195-2eb6-4c06-95aa-ee5f014fd16a","keyword":"性能指数","originalKeyword":"性能指数"},{"id":"8e5e03e9-17c8-47b2-8cd4-12c48a2dcd3f","keyword":"掺杂","originalKeyword":"掺杂"}],"language":"zh","publisherId":"wjclxb200401004","title":"<span style=\"color:red\">Half-Heusler</span>热电半导体材料","volume":"19","year":"2004"},{"abstractinfo":"A new cubic <span style=\"color:red\">half-Heusler</span> structure LiBeN can be derived from the zinc-blende BN, and has a similar band structure to BN. The structural, elastic properties and band structures of LiBeN and zinc-blende BN were studied using the full potential augmented plane wave plus local orbitals method within density functional theory. The conduction band modifications of LiBeN, compared to its zinc-blende analog BN, were discussed. For both BN and LiBeN, the valence band top is at the I- point. For BN and alpha-LiBeN (Li+ near the anion), the conduction band minimum is at the X point. The beta-LiBeN (Li+ near the cation) has the conduction band minimum at the L point, due to the increase (decrease) of conduction band bottom energy at X (L) point, relative to I- point. The band gaps of LiBeN decrease compared to BN. The total energy calculations show the alpha phase to be more stable than the beta phase for LiBeN. (c) 2007 Elsevier B.V. All rights reserved.","authors":[],"categoryName":"|","doi":"","fpage":"389","id":"7e5a2e55-63f7-450a-bda9-a019ec6a604a","issue":"42830","journal":{"abbrevTitle":"PLA","id":"7b364793-d718-49d5-9832-ec34f0748fdf","issnPpub":"0375-9601","publisherId":"PLA","title":"Physics Letters A"},"keywords":[{"id":"7b9c6817-6308-4f35-aa4f-c523f190aa25","keyword":"semiconductor;electronic band structure;first-principle method;filled tetrahedral semiconductors;optical band-gap;generalized;gradient approximation;cubic boron-nitride;elastic properties;liznx;x;growth;ultraviolet;stability;solids","originalKeyword":"semiconductor;electronic band structure;first-principle method;filled tetrahedral semiconductors;optical band-gap;generalized;gradient approximation;cubic boron-nitride;elastic properties;liznx;x;growth;ultraviolet;stability;solids"}],"language":"en","publisherId":"0375-9601_2007_42830_1","title":"Electronic structure of <span style=\"color:red\">half-Heusler</span> semiconductor LiBeN","volume":"367","year":"2007"},{"abstractinfo":"采用电弧熔炼法和放电等离子体烧结法, 制备了稀土掺杂的金属间化合物Zr<sub>1-<em>x</em></sub>La<sub><em>x</em></sub>NiSn (<em>x</em> = 0.05, 0.1, 0.15, 0.2, 0.3, 0.4) 和Zr<sub>0.98</sub>R<sub>0.02</sub>NiSn<sub>0.98</sub>X<sub>0.02</sub>(R = La, Ce; X = Sb, Bi). 用X射线衍射仪分析研究了它们的晶体结构随稀土替代量演化的规律. 在室温到700 K的范围内, 对其热电特性进行了评价. 研究结果表明, 代换量<em>x</em>小于0.15时, 稀土原子可以进入晶格形成单相化合物. 代换量<em>x</em>大于0.15的样品中含有非<span style=\"color:red\">half-Heusler</span>的第二相, 且含量随x增大而增加. 少量稀土掺杂可以有效地降低材料的热导率而保持良好的电输运特性. 在575 K, Zr<sub>0.98</sub>La<sub>0.02</sub>NiSn<sub>0.98</sub>Sb<sub>0.02</sub>的热电优值达到0.5.","authors":[{"authorName":"李晓光","id":"e3bb5dd9-826b-4904-a86b-5c3a61cb8746","originalAuthorName":"李晓光"},{"authorName":"霍德璇","id":"9ce88869-13fe-402d-81f7-473632a43d5d","originalAuthorName":"霍德璇"},{"authorName":"何才君","id":"9a1df802-0091-43a0-aea9-67b21c2e17fa","originalAuthorName":"何才君"},{"authorName":"赵士超","id":"abf26e81-eae9-4c8f-af10-49e49e69a861","originalAuthorName":"赵士超"},{"authorName":"吕燕飞","id":"66814d7c-8b1f-4500-9788-01d81b54e488","originalAuthorName":"吕燕飞"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2010.00573","fpage":"573","id":"269c0b99-408a-4982-b473-0ac490f22ca6","issue":"6","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"05487436-e61a-44d6-879e-1ac07be4b165","keyword":"热电特性","originalKeyword":"热电特性"},{"id":"22140246-c349-441f-92c9-df4c5ec03f5c","keyword":" ZrNiSn","originalKeyword":" ZrNiSn"},{"id":"191c1eac-c82a-4c05-ae80-6c2a14c8e4d9","keyword":" CeNiSn","originalKeyword":" CeNiSn"},{"id":"d23d3e8d-5980-4a07-be7a-5f8c7e9b00e6","keyword":" <span style=\"color:red\">half-Heusler</span>","originalKeyword":" half-Heusler"},{"id":"a9f0ec67-a0b8-4b0a-93ba-35ae8150798f","keyword":" rare-earth","originalKeyword":" rare-earth"}],"language":"zh","publisherId":"1000-324X_2010_6_2","title":"稀土掺杂对锡基<span style=\"color:red\">Half-Heusler</span><span style=\"color:red\">合金</span>热电特性的影响","volume":"25","year":"2010"},{"abstractinfo":"采用电弧熔炼法和放电等离子体烧结法,制备了稀土掺杂的金属间化合物Zr1-xLaxNiSn(x=0.05,0.1,0.15,0.2,0.3,0.4)和Zr0.98R0.0202NiSn0.98X0.02(R=La,Ce;X=Sb,Bi).用X射线衍射仪分析研究了它们的晶体结构随稀土替代量演化的规律.在室温到700 K的范围内,对其热电特性进行了评价.研究结果表明,代换量x小于0.15时,稀土原子可以进入晶格形成单相化合物.代换量x大于0.15的样品中含有非<span style=\"color:red\">half-Heusler</span>的第二相,且含量随x增大而增加.少量稀土掺杂可以有效地降低材料的热导率而保持良好的电输运特性.在575 K,Zr0.98La0.02NiSn0.98Sb0.02的热电优值达到0.5.","authors":[{"authorName":"李晓光","id":"583e5d9f-6d94-467f-8050-646ba219d79f","originalAuthorName":"李晓光"},{"authorName":"霍德璇","id":"784c15ab-feb8-407d-90be-5a55af381c4c","originalAuthorName":"霍德璇"},{"authorName":"何才君","id":"4647f6dd-f0f6-4fb5-af12-2db5e2e41b0a","originalAuthorName":"何才君"},{"authorName":"赵士超","id":"b81dcc20-2662-4b29-ae30-c93c60562cd2","originalAuthorName":"赵士超"},{"authorName":"吕燕飞","id":"8df70924-48eb-45a9-bcc4-cdfa9fad113a","originalAuthorName":"吕燕飞"}],"doi":"10.3724/SP.J.1077.2010.00573","fpage":"573","id":"10904575-b5bb-4190-af8b-7cedb94c2847","issue":"6","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"8e2eaaa6-d04f-49c0-8b6b-76035c6d2876","keyword":"热电特性","originalKeyword":"热电特性"},{"id":"2a7b227d-1a57-4876-bffe-267ad141178a","keyword":"ZrNiSn","originalKeyword":"ZrNiSn"},{"id":"78d4fa87-38dc-43c5-be64-8bbf3356556a","keyword":"CeNiSn","originalKeyword":"CeNiSn"},{"id":"f69d0efc-b43a-44f7-a6db-c699c450ea8f","keyword":"<span style=\"color:red\">half-Heusler</span>","originalKeyword":"half-Heusler"},{"id":"a374c250-670a-49f0-a07d-8b00d3786706","keyword":"稀土","originalKeyword":"稀土"}],"language":"zh","publisherId":"wjclxb201006003","title":"稀土掺杂对锡基<span style=\"color:red\">Half-Heusler</span><span style=\"color:red\">合金</span>热电特性的影响","volume":"25","year":"2010"},{"abstractinfo":"The electronic structures of <span style=\"color:red\">half-Heusler</span> compounds TiNiSn and TiCoSb are investigated by using the full-potential linearized augmented plane-wave method. When the spin-orbital coupling is included in the calculations, there is only a slight change in the energy band structures. The transport coefficients (Seebeck coefficient, electrical conductivity, and power factor) are then calculated within the Boltzmann theory, and further evaluated as a function of chemical potential assuming a rigid band picture. Our calculations offer a valuable insight on how to improve the thermoelectric performance of these two compounds. (C) 2009 American Institute of Physics.","authors":[],"categoryName":"|","doi":"","fpage":"","id":"df80cec2-a5c3-4a4e-8b52-79c0e92ddaaa","issue":"1","journal":{"abbrevTitle":"JOAP","id":"7dcf8a89-0513-40ee-be2d-759941dcef7e","issnPpub":"0021-8979","publisherId":"JOAP","title":"Journal of Applied Physics"},"keywords":[{"id":"17473cd7-ff19-4647-9a9d-f1ea74983448","keyword":"lattice thermal-conductivity;electronic-structure;partial;substitution;transport-properties;ni;temperature;zrnisn;phases;co;1st-principles","originalKeyword":"lattice thermal-conductivity;electronic-structure;partial;substitution;transport-properties;ni;temperature;zrnisn;phases;co;1st-principles"}],"language":"en","publisherId":"0021-8979_2009_1_2","title":"Thermoelectric performance of <span style=\"color:red\">half-Heusler</span> compounds TiNiSn and TiCoSb","volume":"105","year":"2009"},{"abstractinfo":"The structural, elastic properties and the pressure-induced phase transition of '<span style=\"color:red\">half-Heusler</span>' alloy CoVSb are investigated using the pseudopotential plane wave method within the generalized gradient approximation (GGA). The calculated structural parameters are in good agreement with the available experimental and theoretical data. The elastic constants and their pressure dependences of '<span style=\"color:red\">half-Heusler</span>' cubic CoVSb are calculated using the static finite strain technique, and are presented for the first time together with the theoretical pressure-induced phase transition. The research of phase transition and the calculations of electronic structures show that the '<span style=\"color:red\">half-Heusler</span>' cubic CoVSb transforms to normal hexagonal CoVSb with atomic configurations I and II at about 13.5 and 78.0 GPa, respectively at OK. Combining the analysis of ground-state structures, it is concluded that the '<span style=\"color:red\">half-Heusler</span>' cubic CoVSb mainly transforms to hexagonal CoVSb with atomic configuration I at a relative lower pressure. (C) 2010 Elsevier B.V. All rights reserved.","authors":[],"categoryName":"|","doi":"","fpage":"2611","id":"ecf4e1fe-6bd8-4527-816e-00eb8cf02b78","issue":"5","journal":{"abbrevTitle":"JOAAC","id":"de8b3eb8-d3c1-4889-812c-8ad260eabadc","issnPpub":"0925-8388","publisherId":"JOAAC","title":"Journal of Alloys and Compounds"},"keywords":[{"id":"8d892ac8-3851-45ee-8a71-f28c58ac47c7","keyword":"CoVSb;Elastic properties;Pressure-induced phase transition;Generalized gradient approximation;electronic-structure;metallic ferromagnet;physical-properties;room-temperature;thin-films;crystals;magnetoresistance;semiconductor;instabilities;constants","originalKeyword":"CoVSb;Elastic properties;Pressure-induced phase transition;Generalized gradient approximation;electronic-structure;metallic ferromagnet;physical-properties;room-temperature;thin-films;crystals;magnetoresistance;semiconductor;instabilities;constants"}],"language":"en","publisherId":"0925-8388_2011_5_2","title":"Structural, elastic properties and pressure-induced phase transition of '<span style=\"color:red\">half-Heusler</span>' alloy CoVSb","volume":"509","year":"2011"},{"abstractinfo":"通过悬浮熔炼的方法制备了<span style=\"color:red\">half-Heusler</span>热电材料Zr(Hf)NiSn(Sb)<span style=\"color:red\">合金</span>, 并进一步通过快速凝固来细化晶粒, 通过放电等离子烧结制备块材并测试其热电性能. X射线衍射分析表明获得了单相<span style=\"color:red\">Half-Heusler</span>化合物. 扫描电子显微观察发现, 快速凝固后的样品晶粒尺寸在500nm左右, 放电等离子烧结后晶粒尺寸并未明显长大. 同时观察到在晶粒的表面还分布了很多几十纳米尺寸的小晶粒. 快速凝固的样品与熔炼样品相比具有较高的电导率及载流子浓度, 据此推断在快速凝固过程中产生的纳米晶粒应为金属相. 快速凝固后的样品晶界散射增多, 因而具有较低的晶格热导率.","authors":[{"authorName":"蔚翠","id":"1b79de78-311b-4486-afbd-b1e68b090b12","originalAuthorName":"蔚翠"},{"authorName":"朱铁军","id":"26abddbc-f808-4eff-a3a5-38bae358d528","originalAuthorName":"朱铁军"},{"authorName":"肖凯","id":"0d5da349-dc22-493e-aa24-c2c0f58d7113","originalAuthorName":"肖凯"},{"authorName":"金吉","id":"7c2a9dd8-11d2-47f4-abc7-86a7bd032bc4","originalAuthorName":"金吉"},{"authorName":"沈俊杰","id":"70b11b0e-3c90-48e6-ae11-4edeabeda749","originalAuthorName":"沈俊杰"},{"authorName":"杨胜辉","id":"04895dd7-9a04-4eab-b97c-ec95651fbac5","originalAuthorName":"杨胜辉"},{"authorName":"赵新兵","id":"7579f295-3159-43e9-8635-1fad560d3dd9","originalAuthorName":"赵新兵"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2010.00569","fpage":"569","id":"003f3d9d-bc0e-4372-a770-6846e4b4605e","issue":"6","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"d55e9be6-d838-4dd7-8c03-3c5b90c2f17f","keyword":"ZrNiSn","originalKeyword":"ZrNiSn"},{"id":"5219fcda-addf-45eb-b918-d7bd013a5a2f","keyword":" rapid solidification","originalKeyword":" rapid solidification"},{"id":"44df5758-8090-4b08-8f17-36ae18c3ec62","keyword":" grain sizes","originalKeyword":" grain sizes"},{"id":"974c45a8-926a-4c65-8c7d-0017e6274614","keyword":" microstructure","originalKeyword":" microstructure"}],"language":"zh","publisherId":"1000-324X_2010_6_13","title":"快速凝固法制备ZrNiSn基<span style=\"color:red\">Half-Heusler</span>热电材料的微结构","volume":"25","year":"2010"},{"abstractinfo":"通过悬浮熔炼的方法制备了<span style=\"color:red\">half-Heusler</span>热电材料Zr(Hf)NiSn(Sb)<span style=\"color:red\">合金</span>,并进一步通过快速凝固来细化品粒,通过放电等离子烧结制备块材并测试其热电性能.X射线衍射分析表明获得了单相<span style=\"color:red\">Half-Heusler</span>化合物.扫描电子显微观察发现,快速凝固后的样品晶粒尺寸在500nm左右,放电等离子烧结后晶粒尺寸并未明显长大.同时观察到在晶粒的表面还分布了很多几十纳米尺寸的小晶粒.快速凝固的样品与熔炼样品相比具有较高的电导率及载流子浓度,据此推断在快速凝固过程中产生的纳米晶粒应为金属相.快速凝固后的样品晶界散射增多,因而具有较低的晶格热导率.","authors":[{"authorName":"蔚翠","id":"b1f58ad9-8548-499b-8331-5f7f27a6551e","originalAuthorName":"蔚翠"},{"authorName":"朱铁军","id":"ec764462-4e2f-4caf-b847-83fcc929ecab","originalAuthorName":"朱铁军"},{"authorName":"肖凯","id":"063a3cfa-6ce2-4e58-a54e-09c0bb3669e7","originalAuthorName":"肖凯"},{"authorName":"金吉","id":"af77fc83-4990-4bc8-868c-75b70289f558","originalAuthorName":"金吉"},{"authorName":"沈俊杰","id":"052ee939-1873-4bd8-b02a-b22c0b796363","originalAuthorName":"沈俊杰"},{"authorName":"杨胜辉","id":"06be4994-347c-46d4-a68b-bca91c9bb2d4","originalAuthorName":"杨胜辉"},{"authorName":"赵新兵","id":"c7885017-96cf-41be-96dc-e42e464ee64d","originalAuthorName":"赵新兵"}],"doi":"10.3724/SP.J.1077.2010.00569","fpage":"569","id":"c9db6eb2-3a57-4dc3-9eee-2ae4fc51a15d","issue":"6","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"454c17d7-556e-486e-8a90-83c9256dcfc4","keyword":"ZrNiSn","originalKeyword":"ZrNiSn"},{"id":"39e10291-42ae-465e-8923-4b96b3421be9","keyword":"快速凝固","originalKeyword":"快速凝固"},{"id":"860ca726-63ac-42cf-97f1-ab7965bbb8aa","keyword":"晶粒尺寸","originalKeyword":"晶粒尺寸"},{"id":"ec6f725f-a9b6-4e3e-baf8-4ae5119d61cd","keyword":"微结构","originalKeyword":"微结构"}],"language":"zh","publisherId":"wjclxb201006002","title":"快速凝固法制备ZrNiSn基<span style=\"color:red\">Half-Heusler</span>热电材料的微结构","volume":"25","year":"2010"}],"totalpage":3903,"totalrecord":39024}