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不同退火基体冷轧高强钢的组织特征和性能分析

赵征志 , 婷婷 , 闫远 , 梁驹华 , 赵爱民 , 覃强

材料热处理学报

针对一种0.14C-2.72Mn-1.29Si冷轧高强钢进行了轧制和不同等温时效温度的退火处理,得到了两种不同退火基体的组织特征,均具有较好的综合力学性能.利用FESEM、XRD、TEM和拉伸试验对比分析了不同退火基体试验钢的微观组织、力学性能和加工硬化行为.研究表明:试验钢在220 ~300℃等温时效后钢板的基体组织主要由铁素体和马氏体构成,240℃等温时效后钢板的综合性能最佳,屈服强度为672 MPa,抗拉强度为1333 MPa,总伸长率为13%,屈强比为0.50,组织中含有5.75%的残留奥氏体.而试验钢在390 ~430℃等温时效后钢板的基体组织主要由铁素体和贝氏体构成,在390℃等温时效后钢板的综合性能最佳,屈服强度为505 MPa,抗拉强度为1115 MPa,总伸长率为17%,屈强比为0.45,组织中含有11.17%的残留奥氏体.铁素体+马氏体基体退火钢优异的综合力学性能主要源于细晶强韧化;而铁素体+贝氏体基体退火钢优异的性能主要源于细晶强韧化和TRIP效应增塑,这两种机制的共同作用,使得钢板在高强度的同时,还具有较好的塑韧性.

关键词: 高强钢 , 不同退火基体 , 细晶 , 残留奥氏体 , 加工硬化

1470 MPa级双相钢的性能特征与强韧化机制

赵征志 , 婷婷 , 赵爱民 , 苏岚 , 张岩

材料研究学报

对0.16C-1.38Si-3.2Mn双相钢进行轧制和退火处理,用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、电子背散射衍射(EBSD)等手段表征试验钢的微观组织和断口形貌,分析试验钢经退火后钢板的力学性能和加工硬化行为,重点研究了试验钢晶粒细化的强韧化机制.结果表明:试验钢在800℃退火后的显微组织主要由8.8%铁素体和91.2%回火马氏体构成.退火后的钢板具有良好的综合力学性能,屈服强度为873 MPa,表现为连续屈服特征,抗拉强度为1483MPa,总伸长率为11%,屈强比为0.58;试验钢的Mn含量、退火前的初始组织、冷轧大变形以及退火过程中关键工艺参数等都有利于试验钢退火板的晶粒细化,铁素体尺寸为1-2μm,马氏体板条束的有效晶粒尺寸为0.2-1.5μm.细小的晶粒有利于阻碍位错的运动和增加裂纹扩展的阻力,从而提高了钢板的强度和塑韧性.

关键词: 金属材料 , 超高强双相钢 , 细晶 , 强韧化机制 , 加工硬化行为

1300 MPa级0.14C-2.72Mn-1.3Si钢的显微组织和力学性能及加工硬化行为

赵征志 , 婷婷 , 赵爱民 , 何青 , 董瑞 , 赵复庆

金属学报 doi:10.11900/0412.1961.2014.00113

在连续退火试验机上,对一种Mn含量介于中锰和低锰含量之间的C-Si-Mn系(0.14C-2.72Mn-1.3Si,质量分数,%)超高强钢进行处理,获得了具有铁素体、淬火马氏体、回火马氏体以及一定量残余奥氏体的多相组织.利用膨胀仪,SEM,TEM,EBSD和XRD等对实验钢在不同热处理工艺下的微观组织进行了表征.结果表明,800℃退火实验钢获得最佳综合力学性能,屈服强度为672 MPa,抗拉强度为1333 MPa,总伸长率为13%.这主要是800℃退火钢精细的组织、合适的相比例以及一定量残余奥氏体共同作用的结果.对实验钢加工硬化行为进行了深入分析,讨论了实验钢瞬时加工硬化指数n的变化,采用修正的C-J方法对实验钢多阶段加工硬化行为进行了分析,探讨了马氏体结构参数√fMldM(fM为马氏体体积分数,dM为马氏体等效直径)和铁素体体积分数等对加工硬化的影响.结果表明,实验钢颈缩前随真应变增加n快速增加后减小,但不同温度退火实验钢n减小趋势不同;由于不同温度退火实验钢马氏体体积分数不同,经修正后的C-J法分析得到了2阶段和3阶段的加工硬化行为;铁素体体积分数对马氏体与铁素体共同塑性变形的应变范围△ε有显著影响,低温时共同变形范围小,高温时范围逐渐增大,过高温度时可能又减小.综上,实验钢高的初始加工硬化率源于各相的配比、形貌和分布等,是各组织协调配合和各因素共同作用的结果,有利于提高实验钢的强度和塑韧性.

关键词: 多相组织 , 残余奥氏体 , 加工硬化行为 , 均匀延伸 , 修正C-J分析方法

辽宁小家堡子金矿床地质特征及成因研究

刘红霞 , 孔含泉 , 杨言辰

黄金 doi:10.3969/j.issn.1001-1277.2006.05.004

家堡子金矿床位于辽吉古元古代裂谷中部的青城子矿集区内,矿体赋存于辽河群大石桥组上部碳酸岩与片岩的过渡带,容矿岩石为黑云变粒岩和硅质岩,矿体受层位控制,呈层状、似层状产出;矿石中的金以不可见金为主,含量与黄铁矿、毒砂关系密切.对矿石组构特征研究表明,该矿床形成既与沉积作用有关,又遭受后期变质变形及热液的叠加改造,矿床为热水沉积-变质热液改造成因.

关键词: 热水沉积-变质热液改造型金矿床 , 地质特征 , 家堡子金矿床

辽宁小家堡子金矿床主要硫化物矿物特征及其成因意义

王宝林 , 代军治 , 秦丹鹤 , 王可勇

黄金 doi:10.3969/j.issn.1001-1277.2012.02.005

辽东小家堡子金矿床为一产于元古代辽河群大石桥组变质地层中大型蚀变岩型矿床,矿体的产出主要受大石桥组不同岩性地层之间发育的层间破碎带构造控制.金矿化以浸染、细脉浸染状产出方式为主.矿石中主要金属硫化物矿物为黄铁矿,次为毒砂、方铅矿及闪锌矿.不同时期形成的矿物其产状有一定区别.电子探针分析结果表明,黄铁矿、毒砂为主要的载金矿物,根据硫化物矿物产状及含金性特点,提出了矿床为沉积-变质并经后期热液叠加改造成因的认识.

关键词: 硫化物矿物 , 矿床成因 , 家堡子金矿床 , 辽宁

辽宁青城子地区金、银矿床地质特征及其成因

郝通顺 , 王可勇 , 朴星海 , 万多 , 杨言辰 , 边红业

黄金 doi:10.3969/j.issn.1001-1277.2011.01.006

对辽宁青城子地区近年来发现的高家堡子银矿床及小家堡子金矿床地质特征及矿床成因进行了对比研究,结果表明两类矿床是在早期沉积-变质基础上,经历了后期热液叠加改造作用的结果,其中印支期岩浆热液活动导致了小家堡子等金矿床形成,而其后的大气降水活动是导致高家堡子银矿床富集成矿的主要机制.

关键词: 青城子地区 , 高家堡子银矿床 , 家堡子金矿床 , 地质特征 , 矿床成因

辽宁尖山沟金矿床地质特征及成因探讨

刘培栋 , 杨言辰 , 王秀福 , 董立军 , 刘德军

黄金 doi:10.3969/j.issn.1001-1277.2007.08.005

尖山沟金矿是辽宁省有色地质局在近期评价的大型金矿床,是继找到小家堡子金矿后的又一个重大找矿成果.本文阐述了尖山沟金矿床地质特征及地球化学特征,并探讨了矿床成因.

关键词: 矿床地质特征 , 地球化学特征 , 矿床成因 , 尖山沟金矿床

ATOMIC FORCE MICROSCOPY OBSERVATION OF MAGNETRON SPUTTERED ALUMINUM-SILICON ALLOY FILMS

金属学报(英文版)

粒裕希停桑谩。疲希遥茫拧。停桑茫遥希樱茫希校。希拢樱牛遥郑粒裕桑希巍。希啤。停粒牵危牛裕遥希巍。樱校眨裕裕牛遥牛摹。粒蹋眨停桑危眨停樱桑蹋桑茫希巍。粒蹋蹋希。疲桑蹋停?##2##3##4##5ATOMICFORCEMICROSCOPYOBSERVATIONOFMAGNETRONSPUTTEREDALUMINUM-SILICONALLOYFILMSJ.W.Wu,J.H.FangandZ.H.Lu(NationalLaboratoryofMoleculeandBiomoleculeElectronics,SoutheastUniversity,Nanjing210096,ChinaManuscriptreceived27October1995)Abstrcat:Twodifferentsurfacemorphologycharacteristicsofmagnetronsputteredaluminumsilicon(Al-Si)alloyfilmsdepositedat0and200℃wereobservedbyatomicforcemicroscopy(AFM).Oneisirregularlyshapedgrainsputtogtheronaplane.TheotherisirregularlyshapedgrainsPiledupinspace.Nanometer-sizedparticleswithheightsfrom1.6to2.9nmwerefirstobserved.Onthebasisoftheseobservationsthegrowthmechanismofmagnetronsputteredfilmsisdiscussed.Keywords:magnetronsputtering,Al-Sialloy,surfacemorphology,atomicforcemicroscopy,filmgrowthmechanism1.IntroductionTheuseofaluminumalloys[1,2],inparticularAl-Si,isacommonfeatureinmanysinglelevelandmultilevelinterconnectionschemesadoptedinthemanufactureofmicroelectronicdevicesbecauseofseveraldesirableproperties.TheAl-Sigrainmorphology(size.geometryanddistributionofgrainsisassociatedwithstepcoverage[3],electromigration[4]andinterconnectsresistivity[5]etc..Thus,characterizationofAl-Sialloysurfacemorphologyisveryimportant,especiallywhenintegratedintensityincreasesandlinewidthsof0.3to0.5μmbecomecommon.Inthepasttwentyyears,theAl-Sialloysurfacemorphologywhichaffectsthereliabilityofmicroelectronicdeviceshasbeenwidelyinvestigatedbyscanningelectronmicroscopy(SEM),transmissionelectronmicroscopy(TEM)etc.[5-7].However,SEMandTEMhavetheirlimitationorinconvenience,forexample,theverticalresolutionofSEMisnothighandTEMneedscomplexsamplepreparation.Recently,anewgrainboundaryetchingmethodwasproposed ̄[8]whichalsoneedstroublesomechemicaletching.Atomicforcemicroscopy(AFM),sinceitsemerging,hasbecomemoreandmoreusefulinphysics,chemistry,materialsscienceandsurfacescience,becauseofitshighresolution,easeofsamplepreparationandrealsurfacetopography.Recently,discussion[9,10]waspresentedonhowAFMwillplayaroleinsemiconductorindustry.Asaresponsetothisdiscussion,weusedAFMtoinvestigateAl-SialloysurfacemorphologyandhaveobtainedsomeresultswhichcannotberevealedbySEMorTEM.ThisindicatesthatAFMisagoodcharacterizationtoolinsemiconductorindustry.2.SamplePreparationInourexperiments,aluminumwith30ppmsiliconwassputteredonsiliconsubstrateinbatchdepositionmodeAllthreefilmswiththicknessof1.6μmweredepositedusinganargonsputteringpressureof4.2×10 ̄-3Pa.TheotherdepositionparametersaredescribedinTable1.Thesubstratewascleanedusingstandardpremetallizationcleaningtechniquespriortofilmdeposition.3.ExperimentalResultsandDiscussionTheAFMmeasurementswereperformedonacommercialsystem(NanoscopeIII,DigitalInstruments,SantaBarbara).Thetipismadeofmicrofabricatedsiliconnitride(Si_3N_4)Itisattachedtoa200μmcantileverwithaforceconstantofabout0.12N/m.Beforethesurfaceofsamplewasexamined.agoodtipwithananometer-sizedprotrusionatitsendwasselectedbeforehand,whichcanbeobtainedbyimagingtheatomicstructureofmicasubstrateandagoldgrid.AtypicaloperatingforcebetweenthetipandAl-Sisamplesurfaceisoftheorderof10 ̄-8Nandallimagesweretakenatroomtemperatureinair.AtypicaltopographicviewoftheAl-SifilmsisshowninFig.1(allimagescansizeis5by5μma,bandcarerespectivelyforsample1,2,and3).FromFig.la,itcanbeseenthatirregularlyshapedgrainstiltinginvaryingdegreespileupinspace,andgroovesamongtheirregularlyshapedgrainsaredifficulttodecideatacertainarea(wedefineitascharacteristicA).Toourknowledge,onreportsonthesurfacemorphologyhavebeenpresentedbefore.InFig1b,however,irregularlyshapedgrainsassembleonaPlaneandgroovesamongtheirregularlyshapedgrainsareeasytodecide(wedefineitascharacteristicB),whichisinagreementwithmanypreviousreports[5-7].InFig.1c,bothcharacteristicA(arrowA)andcharacteristicB(arrowB)wereobserved.IndoingAFMexperiments,weselectedfivedifferentscanareastobeimagedforeachsampleandfoundthatallimagesofeachsamplearerespectivelysimilartoFig.1a,bandc.Also,wenotedthatthesurfaceofinFig.1a.WethinkthatdepositionparameterswillinfluenceAl-Sisurfacemorphology,andthetiltedgrainsmaybesusceptibletomicrocracking.Byreducingthescansizeareato2by2μm(Fig.2aandb).Weobtainedmanyidenticalresultsasdescribedabove,suchasirregularlyshapedgrainsetc.Forthefirsttime,wefoundnanometersizedparticlesonirregularlyshapedgrainsurfacewhichcannotberevealedbySEMbecausethediameterofthesenanoparticlesisabout10nmandtheheightofthesenanoparticlesisintherangeof1.6to2.9nm.Inimaging,wenotedthatrotatingthescandirectionandchangingthescanfrequencydidnotaffectthestructureofthesegrainsasshowninFig.2aandb,rulingoutthepossibilitythatscanninginfluencedtheshapeoftheseparticlesorcausedsomesimilarimagingartifacts.Also,wenotedthatthenanoparticleswerenotobservedontheslopesofthegrooves(Fig.2aandb).Thisphenomenoncanbeexplainedasfollows:thepotentialenergyattheslopeislargerthanthatelsewhere,sotheparticlesseemmorelikelytobedepositedontheseareaswithlowerpotentialenergy.Fig.2c,scansize250by250nm,isazoomtopographicimage(whiteoutlineinb).Itshowsunevendistributionofthenanoparticles.Andtheheightdifferenceofthenanoparticlesindicatesdifferentgrowingspeed.Wethinkbasedonthemorphologyofnanoparticles,thattheheightdifferenceandunevendistributionofthesenanoparticlesshowdifferentgrowingadvantageandindicatethatatomshaveenoughenergytomovetoasuitablegrowingspot.Theenergymaybefromthefollowingsources:surfacetemperaturefluctuation,stressdifferenceorcollisionbetweenhighspeedsputteredatoms.Thesenanoparticlesgoongrowingandformmanyirregularlyshapedgrains.AndtheseirregularlyshapedgrainsfurtherconnecteachotheraccordingtocharacteristicAorB,finallyformingtheAl-Sisurfacemorphology.4.ConclusionWecandrawthefollowingconclusionsfromtheabove.First,theexperimentalresultsshowedthatAFMisapowerfultooltoinvestigatethedetailsofAl-Sisurfacemorphologywhichcangreatlyenrichourknowledgeofthefilmgrowthmechanism.Second,depositionconditionsplayanimportantroleindeterminingtheAl-Sisurfacemorphology.Third,thetwoAl-Sisurfacemorphologycharacteristicsarethatirregularlyshapedgrainsassembleonaplaneandirregularlyshapedgrainstiltinginvaryingdegreespileupinspace.Fourth,forthefirsttime,nanoparticleswereobservedonirregularlyshapedgrainsurfacewhichsuggestedthatthefilmgrowthmechanismwasbyinhomogeneousnucleation.Acknowledgements-BeneficialdiscussionswereheldwithDr.ZhenandMr.Zhu.ThisworkwaspartiallysupportedbytheNationalNaturalScienceFoundationofChina.RFFERENCES||1D.pramanikandA.N.Saxena,SolidStateTechnol.26(1983)127.2D.pramanikandA.N.Saxena,SolidStateTechnol.26(1983)131.3D.pramanikandA.N.Saxena,SolidStateTechnol.33(1990)73.4S.S.IyerandC.Y.Worg,J.Appl.phys.57(1985)4594.5J.F.Smith,SolidStateTechnol.27(1984)135.6D.GerthandD.Katzer,ThinSolidFilm208(1992)67.7R.J.WilsonandB.L.Weiss,ThinSolidFilm207(1991)291.8E.G.Solley,J.H.Linn,R.W.BelcherandM.G.Shlepr,SolidStateTechnol33(1990)409I.SmithandRHowland,SolidStateTechnol.33(1990)53.10L.Peters,SemiconductorInternational16(1993)62.##61D.pramanikandA.N.Saxena,SolidStateTechnol.26(1983)127.2D.pramanikandA.N.Saxena,SolidStateTechnol.26(1983)131.3D.pramanikandA.N.Saxena,SolidStateTechnol.33(1990)73.4S.S.IyerandC.Y.Worg,J.Appl.phys.57(1985)4594.5J.F.Smith,SolidStateTechnol.27(1984)135.6D.GerthandD.Katzer,ThinSolidFilm208(1992)67.7R.J.WilsonandB.L.Weiss,ThinSolidFilm207(1991)291.8E.G.Solley,J.H.Linn,R.W.BelcherandM.G.Shlepr,SolidStateTechnol33(1990)409I.SmithandRHowland,SolidStateTechnol.33(1990)53.10L.Peters,SemiconductorInternational16(1993)62.##A##BATOMIC FORCE MICROSCOPY OBSERVATION OF MAGNETRON SPUTTERED ALUMINUM-SILICON ALLOY FILMS$$$$J.W.Wu,J.H. Fang and Z.H.Lu (National Laboratory of Molecule and Biomolecule Electronics,Southeast University,Nanjing 210096, China Manuscript received 27 October 1995)Abstrcat:Two different surface morphology characteristics of magnetron sputtered aluminumsilicon(Al-Si)alloy films deposited at 0 and 200℃ were observed by atomic force microscopy(AFM).One is irregularly shaped grains put togther on a plane.The other is irregularly shaped grains Piled up in space. Nanometer-sized particles with heights from 1.6 to 2.9 nm were first observed. On the basis of these observations the growth mechanism of magnetron sputtered films is discussed.

关键词: :magnetron sputtering , null , null , null , null

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