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Hole-injection mechanisms of organic light emitting diodes with Si anodes

2006, 21(6): 740-743.

[摘要](371)

Organic light-emitting diodes with n-type silicon anode

2005, 20(8): 761-764.

[摘要](186)

Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 mu m

2004, 19(6): 742-746.

[摘要](185)

Fabrication and complete characterization of polarization insensitive 1310 nm InGaAsP-InP quantum-well semiconductor optical amplifiers

2004, 19(1): 120-126.

[摘要](184)

Investigations of the electron paramagnetic resonance parameters and atomic positions for Co2+ ions in 3C-, 2H- and 4H-ZnS

2002, 17(5): 493-496.

[摘要](161)

Theoretical studies of the g factor of V3+ in III-V semiconductors

1999, 14(9): 883-885.

[摘要](182)

The effect of electron effective mass mismatch on the electron-optical-phonon scattering rate in a quantum well structure

1997, 12(10): 1235-1239.

[摘要](183)

Theoretical studies of the g factor of V3+ in III-V semiconductors

Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 mu m

The effect of electron effective mass mismatch on the electron-optical-phonon scattering rate in a quantum well structure

Hole-injection mechanisms of organic light emitting diodes with Si anodes

Organic light-emitting diodes with n-type silicon anode

Fabrication and complete characterization of polarization insensitive 1310 nm InGaAsP-InP quantum-well semiconductor optical amplifiers

Investigations of the electron paramagnetic resonance parameters and atomic positions for Co2+ ions in 3C-, 2H- and 4H-ZnS

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Hole-injection mechanisms of organic light emitting diodes with Si anodes

2006, 21(6):740-743.

[摘要](371)

Semiconductor Science and Technology 纸刊购买

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