60 V tolerance full symmetrical switch for battery monitor IC
2017,（6）An X-band 22.5°/45° digital phase shifter based on switched filter networks
2017,（6）Design of MCI single and symmetrical on-chip spiral inductors
2017,（6）Laser at 532 nm by intracavity frequency-doubling in BBO
2017,（6）The effects of deep-level defects on the electrical properties of Cd0.9Zn0.1Te crystals
2017,（6）Artificial neuron synapse transistor based on silicon nanomembrane on plastic substrate
2017,（6）Improving the peak current density of resonant tunneling diode based on InP substrate
2017,（6）Fabrication of a novel MOS diode by indium incorporation control for microelectronic applications
2017,（6）A sensitivity analysis of millimeter wave characteristics of SiC IMPATT diodes
2017,（6）Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications
2017,（6）Schottky barrier parameters and structural properties of rapidly annealed Zr Schottky electrode on p-type GaN
2017,（6）Comparative research on the influence of varied Al component on the active layer of AlGaN photocathode
2017,（6）A simple chemical route to synthesize the umangite phase of copper selenide (Cu3Se2) thin film at room temperature
2017,（6）Improving the photocatalytic performance of TiO2 via hybridizing with graphene
2017,（6）Effect of SnCl2 and SnCl4 precursors on SnSx thin films prepared by ultrasonic spray pyrolysis
2017,（6）Study on the mechanism of perpendicular magnetic anisotropy in Ta/CoFeB/MgO system
2017,（6）Scalable wideband equivalent circuit model for silicon-based on-chip transmission lines
2017,（6）A new sensitivity model with blank space for layout optimization
2017,（6）Differential optical gain in a GaInN/AlGaN quantum dot
2017,（6）
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