A 10-bit 110 MHz SAR ADC with asynchronous trimming in 65-nm CMOS
2017,(4)A fully on-chip fast-transient NMOS low dropout voltage regulator with quasi floating gate pass element
2017,(4)A low-voltage sense amplifier with two-stage operational amplifier clamping for flash memory
2017,(4)Study on infrared image super-resolution reconstruction based on an improved POCS algorithm
2017,(4)Design of the low-loss waveguide coil for interferometric integrated optic gyroscopes
2017,(4)Simulation approach for optimization of ZnO/c-WSe2 heterojunction solar cells
2017,(4)Answer to comments on "Fabrication and photovoltaic conversion enhancement of graphene/n-Si Schottky barrier solar cells by electrophoretic deposition"
2017,(4)The properties of an asymmetric Gaussian potential quantum well qubit in RbCl crystal
2017,(4)Investigation of temperature-dependent small-signal performances of TB SOI MOSFETs
2017,(4)Reliability evaluation of high-performance, low-power FinFET standard cells based on mixed RBB/FBB technique
2017,(4)Optimization of junction termination extension for ultrahigh voltage 4H-SiC planar power devices
2017,(4)Performance analysis of SiGe double-gate N-MOSFET
2017,(4)Simulation of double junction In0.46Ga0.54N/Si tandem solar cell
2017,(4)22 nm In0.75Ga0.25As channel-based HEMTs on InP/GaAs substrates for future THz applications
2017,(4)Effect of oxygen concentration on resistive switching behavior in silicon oxynitride film
2017,(4)Electrical and optical property of annealed Te-doped GaSb
2017,(4)The effect of differential temperatures on the latent heat in the nucleation of CdSe quantum dots
2017,(4)A method to transfer an individual graphene flake to a target position with a precision of sub-micrometer
2017,(4)Identification of strained black phosphorous by Raman spectroscopy
2017,(4)Simulation of the effects of defects in low temperature Ge buffer layer on dark current of Si-based Ge photodiodes
2017,(4)