金刚石薄膜异质外延的研究状况与展望

材料导报, 2002, 16(10): 52-54.

金刚石薄膜异质外延的研究状况与展望

王传新 ^1, , 汪建华 ^2, , 马志斌 ^3, , 满卫东 ^4, , 王升高 ^5,

1.中国科学院等离子体物理研究所,合肥,230031;武汉化工学院材料科学与工程系,武汉,430073

2.中国科学院等离子体物理研究所,合肥,230031

3.中国科学院等离子体物理研究所,合肥,230031

4.中国科学院等离子体物理研究所,合肥,230031;武汉化工学院材料科学与工程系,武汉,430073

5.中国科学院等离子体物理研究所,合肥,230031;武汉化工学院材料科学与工程系,武汉,430073

关键词：金刚石 , 膜异质外延 , CVD

Review of Research and Development Work for Heteroepitaxial Diamond Films

综述了化学气相沉积异质外延金刚石薄膜机理及工艺的研究现状,分析了存在的问题,并对今后的研究进行了展望.

参考文献

[1]	Yoshikawa M;Ishida H;Ishitani A et al.[J].Applied Physics Letters,1990,58:1387.
[2]	Jeng D G;TuanHS;Salat R F et al.[J].Applied Physics Letters,1990,56:1968.
[3]	Yugo S;Kanai T;Kimura T et al.[J].Applied Physics Letters,1991,58(10):1036.
[4]	Stoner B R;Glass J T .[J].Applied Physics Letters,1992,60(06):698.
[5]	Jiang X;Klages C-P;Zachai R et al.[J].Applied Physics Letters,1993(62):3438.
[6]	Chen Qijin;Ynag Jie;Lin Zhangda .[J].Applied Physics Letters,1995,67(13):1853.
[7]	廖克俊,王万录.利用发射电子法经由热灯丝CVD在Si（100）上合成局域异质外延金刚石膜[J].人工晶体学报,1998(02):137-140.
[8]	Wolter S D;Stoner B R;Class J T et al.[J].Applied Physics Letters,1993,62(11):1215.
[9]	Kim Yoon-Kee;Lee Jai-Young .[J].Journal of Applied Physics,1997,81(08):3360.
[10]	Hideaki Maeda;Kyo Ohtsubo;Miki Irie .Determination of diamond [100] and [111] growth rate and formation of highly oriented diamond film by microwave plasma-assisted chemical vapor deposition[J].Journal of Materials Research,1995(12):3115-3123.
[11]	Schreck M.;Stritzker B.;Thurer KH. .LIMITATIONS OF THE PROCESS WINDOW FOR THE BIAS ENHANCED NUCLEATION OF HETEROEPITAXIAL DIAMOND FILMS ON SILICON IN THE TIME DOMAIN[J].Journal of Applied Physics,1997(7):3092-3095.
[12]	Schreck M.;Klarmann R.;Stritzker B.;Thurer KH. .INFLUENCE OF THE NUCLEATION PROCESS ON THE AZIMUTHAL MISORIENTATION OF HETEROEPITAXIAL DIAMOND FILMS ON SI(001)[J].Journal of Applied Physics,1997(7):3096-3102.
[13]	Jiang X;Jia C L .[J].Applied Physics Letters,1995,67(09):1197.
[14]	Brian W Sheldon;Roseann Csencsits;Janet Rankin et al.[J].Journal of Applied Physics,1994,75(10):5001.
[15]	Stoner B R;Ma G-H M;Wolter S D et al.[J].Physical Review B,1992,45(19):11067.
[16]	Garcia MM.;Vazquez L.;Gomez-Aleixandre C.;Albella JM. Sanchez O.;Terminello LJ.;Himpsel FJ.;Jimenez I. .X-ray absorption spectroscopy and atomic force microscopy study of bias-enhanced nucleation of diamond films[J].Applied physics letters,1998(17):2105-2107.
[17]	王必本,王万录,廖克俊,肖金龙.衬底负偏压增强金刚石成核机制的研究进展[J].材料导报,2000(04):44-45.
[18]	Lee ST.;Peng HY.;Zhou XT.;Wang N.;Lee CS.;Bello I.;Lifshitz Y. .A nucleation site and mechanism leading to epitaxial growth of diamondfilms[J].Science,2000(5450):104-106.
[19]	Lifshitz Y;Duan X F;Shang N G et al.[J].Nature,2001,412(26):404.
[20]	Yang Jie;Lin Zhangda;Wang Lixin et al.[J].Applied Physics Letters,1994(65):3203.
[21]	Liao Y;Ye F;Shao Q Y et al.[J].Thin Solid Films,2000,368(02):211.
[22]	Woo HK.;Bello I.;Lee ST.;Wong KW.;Wong NB.;Lee CS. .Oriented diamond growth on silicon (111) using a solid carbon source[J].Journal of Applied Physics,1998(8):4187-4192.
[23]	Berber J;Sattel S;Ehrhardt H et al.[J].Journal of Applied Physics,1996,79(08):4388.
[24]	Jaccodine R J .[J].Journal of Applied Physics,1993,74(04):2841.
[25]	Zhang WJ.;Xia YB.;Jiang X. .THE SELECTIVE ETCHING WITH H+ IONS AND ITS EFFECT ON THE ORIENTED GROWTH OF DIAMOND FILMS[J].Journal of Applied Physics,1997(4):1896-1899.
[26]	Jiang X;Zhang W J;Paul M et al.[J].Applied Physics Letters,1996,68(14):1927.
[27]	Zhang W J;Jiang X;Klages C-P .[J].Journal of Crystal Growth,1997,171:485.
[28]	Jiang X;Willich P;Paul M et al.[J].Journal of Materials Research,1999,14(08):3211.
[29]	Stoner B P;Lao Chien-the;Malta D M et al.[J].Applied Physics Letters,1993,62(19):2347.
[30]	八木一三;藤岛昭 .[J].表面技术(日本),1999,50(06):486.
[31]	Jagannadham K.;Butler JE.;Verghese K. .Neutron transmutation of B-10 isotope-doped diamond[J].Applied physics letters,2001(4):446-447.
[32]	Cao GZ.;Bauhuis GJ.;Giling LJ.;Alkemade PFA.;Driessen FAJM. .HOMOEPITAXIAL DIAMOND FILMS CODOPED WITH PHOSPHORUS AND NITROGEN BY CHEMICAL-VAPOR DEPOSITION[J].Journal of Applied Physics,1995(5):3125-3131.
[33]	Bello I;Fung M K;Zhang W J et al.[J].Thin Solid Films,2000,368:222.
[34]	Sandhau G S;Chu W K .[J].Applied Physics Letters,1989,55:437.
[35]	Stoner B;Tessmer G J;Dreifus D L .[J].Applied Physics Letters,1993,62:1803.
[36]	Ralchenko V G;Korotushenko K G;Smolin A A et al.[J].Diamond and Related Materials,1995,4:893.
[37]	Sun C;Zhang W J;Wang N et al.[J].Journal of Applied Physics,2000,88(06):3354.
[38]	Marechal N;Yamashita S .[J].Thin Solid Films,1996,290-291:131.
[39]	Reichelt K .[J].真空,1988,38:1083.

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

金刚石薄膜异质外延的研究状况与展望

Review of Research and Development Work for Heteroepitaxial Diamond Films

参考文献