采用真空热蒸发法,在玻璃衬底上制备纳米SnS2薄膜.研究不同Sn和S配比及不同热处理条件对薄膜性能的影响.实验给出采用Sn:S=1:1.5摩尔比混合粉末制备的薄膜,经T=430℃,t=40min氮气保护热处理可获得性能良好的SnS2纳米多晶薄膜.薄膜呈n型、表面结构较致密,平均晶粒尺寸为77nm,直接光学带隙约为2.02ev.
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