介绍了微波功率器件的发展和前景,对HBT,MESFET和HEMT微波功率器件材料的特点和选取,以及器件的特性和设计做了分类说明.着重介绍了SiGe合金、InPSiC、GaN等新型微波功率器件材料.并对目前各种器件的最新进展和我国微波功率器件的研制现状及与国外的差距做了概述与展望.
参考文献
| [1] | Sun Mike.ANon-Self Aligned InP HBT Production Process[A].,2002 |
| [2] | KimYM.High-Performance InP/In0 53Ga0 47As/InP Double HBT on GaAs Substrates[J].IEEE,2002(06):297. |
| [3] | Chiu H C.IEEE High power density and power added efficiency of A10.5In 0.5P/InGaAs doped-channel HFETs Indium Phosphide and Related Materials[M].,2001:188. |
| [4] | 刘刚.半导体器件[M].北京:电子工业出版社,2000 |
| [5] | 李竞春,杨沛峰,杨谟华,何林,李开成,谭开州,张静.Si1-xGex/Si应变材料的生长及热稳定性研究[J].微电子学,2002(02):120-123. |
| [6] | 钱永学,刘训春,王润梅,石瑞英.自对准GaInP/GaAs HBT器件[J].半导体学报,2002(05):513-516. |
| [7] | 蔡勇,张利春,高玉芝,叶红飞,金海岩,张树丹.微波功率双极晶体管热分布的二维数值模拟及功率密度非均匀设计[J].半导体学报,2003(02):209-215. |
| [8] | ZhenqiangMa.2002 Asia-Pacific Microwave Conference APMCProceedings[C].,2002:1563. |
| [9] | 常玉春,崔洪峰,王金忠,宋俊峰,Hailin Luo,Y.Wang,杜国同.垂直发射极镇流电阻在HBT中的发射极电流集边效应中的作用[J].半导体学报,2002(06):624-627. |
| [10] | 孙英华 等.[J].半导体技术,1996,21(02):624. |
| [11] | 史进,黎晨,陈培毅,罗广礼.调制掺杂层在SiGe PMOSFET中的应用[J].微电子学,2002(04):249-252. |
| [12] | MaZ et al.[J].IEEE"A High Power and High-Gain X-band Si/GeSi/Si HBT",2002,4:1101. |
| [13] | 黄忠升 .提高微波功率晶体管击穿电压研究[J].半导体技术,1996,24(04):17. |
| [14] | 党冀萍 .微波功率器件及其电路[J].半导体技术,1994,24(04):17. |
| [15] | Tatsuo Itoh WTEC Hyper Librarian"Hard Ware For RF Front-End of Wireless Communication"[Z].,2000. |
| [16] | PhilipG.Neudeck Institute of Physics Conf[C].Series 141Compound Semiconductors,1994 |
| [17] | 徐昌发,杨银堂.SiC MESFET技术与器件性能[J].微电子学,2002(01):7-10. |
| [18] | Anaberm CA.[A].,1999:321. |
| [19] | 顾聪 等.微波学报"微波功率GaAs MESFET小信号等效电路的研究"[J].,2002,12:399. |
| [20] | Zhang A P et al.Microwave power SiC MESFETs and GaN HEMTs[J].Solid-State Electronics,2002,47(05):821. |
| [21] | N. Vellas;C. Gaquiere;Y. Guhel;M. Werquin;F. Bue;R. Aubry;S. Delage;F. Semond;J. C. De Jaeger .High linearity performances of GaN HEMT devices on silicon substrate at 4 GHz[J].IEEE Electron Device Letters,2002(8):461-463. |
| [22] | Zheng XG.;Sun X.;Kinsey GS.;Holmes AL.;Streetman BG. Campbell JC.;Yuan P. .Temperature dependence of the ionization coefficients of AlxGa1-xAs[J].IEEE Journal of Quantum Electronics: A Publication of the IEEE Quantum Electronics and Applications Society,2000(10):1168-1173. |
| [23] | inariSC .GaN electronic devices for future systems Microwave Symposium Digest[J].IEEE MTT-S International Microwave Symposium Digest,1999,3:1081. |
| [24] | Alekseev E.;Nguyen NX.;Nguyen C.;Grider DE.;Pavlidis D. .Power performance and scalability of AlGaN/GaN power MODFETs[J].IEEE Transactions on Microwave Theory and Techniques,2000(10):1694-1700. |
| [25] | LeierH et al.Fabrication and characterisation of AlGaN/GaN MODFETs for microwave power applications[J].Advances in Semiconductor Devices IEEE Colloquium on,1999,4:1. |
| [26] | 邵庆辉,李蓓,叶志镇.AlGaN/GaN基HEMT器件的研究进展[J].微纳电子技术,2003(02):10-13,16. |
| [27] | 张锦文,闫桂珍,张太平,王玮,宁宝俊,武国英.Au-AlGaN/GaN HFET研制与器件特性[J].半导体学报,2002(04):424-427. |
| [28] | 周慧梅,沈波,周玉刚,刘杰,郑泽伟,钱悦,张荣,施毅,郑有炓,曹春海,焦刚,陈堂胜.金属/n型AlGaN欧姆接触[J].半导体学报,2002(02):153-156. |
| [29] | ParikhP et al.Power GaN-Based Microwave Device for Wireless Communications[Z].GaAs Mantech,2001. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%