以康宁Eagle 2000玻璃为衬底,用磁控溅射法制备了不同硅铝厚度比的非晶硅/二氧化硅/铝叠层,在氩气保护下于450℃退火一定时间,制备出铝诱导多晶硅薄膜。用Raman光谱和紫外反射光谱讨论了硅铝厚度比对薄膜结晶性能的影响。结果表明,硅铝厚度比对多晶硅薄膜的结晶性能有显著影响,最佳硅铝厚度比为5∶1。
Corning glass eagle 2000 was used as substrate to prepare glass/amorphous/silicate/aluminum stacks of different thickness ratio of silicon to aluminum by magnetron-sputtering.The stacks were annealed at 450℃ for selected time in Ar atmosphere and polycrystalline silicon film was achieved by aluminum-induced crystallization.Raman spectra and ultraviolet reflectance spectra were used to measure the crystalline quality of polycrystalline silicon.The crystalline quality was greatly influenced by the thickness ratio.The optimum thickness ratio of silicon to aluminum was 5∶1,which was inferred by the crystalline quality.
参考文献
[1] | Oliver Nast;Stephan Brehme;Dirk H. Neuhaus;Stuart R. Wenham .Polycrystalline silicon thin films on glass by aluminum-induced crystallization[J].IEEE Transactions on Electron Devices,1999(10):2062-2068. |
[2] | Jaeger C;Bator M;Matich S et al.Two-step crystallization during the reverse aluminum-induced layer exchange process[J].Journal of Applied Physics,2010,108:113513. |
[3] | Peng C C;Chung C K;Lin J F .Effects of Al film thickness and annealing temperature on the aluminum-induced crystallization of amorphous silicon and carrier mobility[J].Acta Materialia,2011,59:6093. |
[4] | Oliver Nast;Stuart R. Wenham .Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization[J].Journal of Applied Physics,2000(1):124-132. |
[5] | J. Klein;J. Schneider;M. Muske;S. Gall;W. Funs .Aluminium-induced crystallisation of amorphous silicon: influence of the aluminium layer on the process[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2004(3):481-484. |
[6] | J. Schneider;R. Heimburger;J. Klein;M. Muske;S. Gall;W. Fuhs .Aluminum-induced crystallization of amorphous silicon: Influence of temperature profiles[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2005(1/2):107-112. |
[7] | 唐正霞,沈鸿烈,鲁林峰,黄海宾,蔡红,沈剑沧.氧化铝膜对铝诱导制备多晶硅薄膜的影响[J].真空科学与技术学报,2010(01):38-42. |
[8] | 唐正霞,沈鸿烈,解尧,鲁林峰,江枫,沈剑沧.100μm大晶粒多晶硅薄膜的铝诱导法制备[J].功能材料,2010(03):453-456. |
[9] | 王宙,曹健,室谷贵之,付传起.铝诱导晶化真空蒸镀多晶硅薄膜的研究[J].功能材料,2012(05):573-575. |
[10] | Harbeke G;Jastrzebski L .Assessment of surface quality of SIMOX wafers by UV reflectance[J].J Electrochem Soe,1990,137:696-702. |
- 下载量()
- 访问量()
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%