通过在不同温度下氨化ZnO/Ga2O3膜,在Si衬底上成功制备了GaN纳米结构材料.氨化前,ZnO层和Ga2O3膜分别通过射频磁控溅射法依次溅射到Si衬底上.用X射线衍射(XRD)、红外傅里叶变换光谱(FTIR)分析了GaN晶体的结构和组分,利用扫描电子显微镜(SEM)观察了样品的形貌.通过对测试结果的分析可知在Si衬底上由ZnO挥发辅助生长出六方纤锌矿GaN纳米结构晶体,并且ZnO/Ga2O3的氨化温度对形成GaN纳米材料具有明显的影响.
Hexagonal wurtzite GaN materials with nano-structure have been fabricated on Si (111) substrates via ammoniating ZnO/Ga2O3 films at different temperatures. ZnO layers and Ga2O3 films were deposited in turn on Si (111) substrates by radio frequency (r.f.) magnetron sputtering before the ammoniating process. The structure and composition of GaN crystal were studied by X-ray diffraction(XRD) and fourier transform infrared spectrophotometer(FTIR).The morphology of the samples was studied by scanning electron microscopy (SEM).Through the analyses of the measurement results , a conclusion can be drawn that hexagonal wurtzite GaN with nano structure was grown on Si (111) substrates with the assistance of the volatilization of ZnO, and the ammoniating temperature has a great effect on the fabrication of GaN nano materials with this method.
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