本文制备了纳米级的Hf/HfO2基阻变存储器,阻变存储器上电极金属和下电极金属交叉,形成交叉点型的金属-氧化物-金属结构.系统地对其电学特性进行表征,包括forming过程、SET过程和RESET过程.详细研究了该阻变存储器SET电压与RESET电压,高阻态阻值与低阻态阻值间的关联性.该阻变存储器的电学参数与SET过程的电流限制值强相关,因此需要折中优化.利用量子点接触模型对Hf/HfO2基阻变存储器的开关物理机制进行了分析.
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